ZP DMP2035UQ-7 P-channel enhancement mode mosfet Datasheet

DMP2035U
Features
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•
•
•
•
•
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Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
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Drain
SOT23
D
Gate
Gate
Protection
Diode
Top View
ESD PROTECTED TO 3kV
Source
S
G
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMP2035U-7
DMP2035UQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000 / 7” Tape & Reel
3000 / 7” Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
MP3
Date Code Key
Year
Code
Month
Code
[email protected]
2009
W
Jan
1
2010
X
Feb
2
Mar
3
MP3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
YM
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
2011
Y
Apr
4
May
5
2012
Z
Jun
6
www.zpsemi.com
2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
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DMP2035U
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +70°C
Value
-20
±8
Unit
V
V
IDM
-3.6
-2.9
-24
Symbol
PD
RθJA
TJ, TSTG
Value
0.81
153.5
-55 to +150
ID
Pulsed Drain Current (Note 6)
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
-20
-
-
-1.0
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.4
-0.7
-1.0
V
RDS(ON)
-
23
30
41
35
45
62
mΩ
|Yfs|
VSD
-
14
-0.7
-1.0
S
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1610
157
145
9.45
15.4
2.5
3.3
16.8
12.4
94.1
42.4
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDS = -10V,
ID = -4A
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6.0Ω, ID = -1A
3. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t ‫أ‬10s.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
[email protected]
www.zpsemi.com
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