TetraFET D1083UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm (inches) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13dB MINIMUM • SURFACE MOUNT APPLICATIONS TO–263 PACKAGE PIN 1 – GATE PIN 2 – DRAIN PIN 3 – SOURCE PIN 4 – DRAIN • LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Fax (01455) 552612. Email [email protected] 62.5W 70V ±20V 5A –65 to 125°C 150°C Prelim. 7/96 D1083UK SEME LAB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS Drain–Source Min. Typ. Max. Unit VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 1A GPS Common Source Power Gain η Drain Efficiency VDS = 28V IDQ = 0.1A PO = 4W f = 200MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance 70 1 V 0.8 S 13 dB 40 % 20:1 — Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 30 Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2.5 * Pulse Test: VGS = –5V f = 1MHz 60 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Fax (01455) 552612. Email [email protected] Max. 2°C / W Prelim. 7/96