Seme LAB D1083UK Metal gate rf silicon fet Datasheet

TetraFET
D1083UK
SEME
LAB
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm (inches)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
4
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
TO–263 PACKAGE
PIN 1 – GATE
PIN 2 – DRAIN
PIN 3 – SOURCE
PIN 4 – DRAIN
• LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
TSTG
TJ
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Fax (01455) 552612. Email [email protected]
62.5W
70V
±20V
5A
–65 to 125°C
150°C
Prelim. 7/96
D1083UK
SEME
LAB
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
BVDSS
Drain–Source
Min.
Typ.
Max. Unit
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
1
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 1A
GPS
Common Source Power Gain
η
Drain Efficiency
VDS = 28V
IDQ = 0.1A
PO = 4W
f = 200MHz
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VSWR Load Mismatch Tolerance
70
1
V
0.8
S
13
dB
40
%
20:1
—
Ciss
Input Capacitance
VDS = 0V
Coss
Output Capacitance
VDS = 28V VGS = 0
f = 1MHz
30
Crss
Reverse Transfer Capacitance
VDS = 28V VGS = 0
f = 1MHz
2.5
* Pulse Test:
VGS = –5V f = 1MHz
60
pF
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone (01455) 556565. Fax (01455) 552612. Email [email protected]
Max. 2°C / W
Prelim. 7/96
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