Hittite HMC174MS8 Gaas mmic t/r switch dc - 3 ghz Datasheet

HMC174MS8 / 174MS8E
v02.0805
Typical Applications
Features
The HMC174MS8 / HMC174MS8E is ideal for:
Ultra Small Package: MSOP8
• ISM Applications
High Third Order Intercept: +60 dBm
• PCMCIA Wireless Cards
Single Positive Supply: +3 to +10V
• Portable Wireless
High RF power Capabilty
Functional Diagram
General Description
The HMC174MS8 & HMC174MS8E are low-cost
SPDT switches in 8-lead MSOP packages for use in
transmit-receive applications which require very low
distortion at high signal power levels. The device can
control signals from DC to 3.0 GHz and is especially
suited for 900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM
applications with only 0.5 dB loss. The design provides exceptional intermodulation performance; providing a +60 dBm third order intercept at 8 Volt bias.
RF1 and RF2 are reflective shorts when “OFF”. Onchip circuitry allows single positive supply operation
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
14
SWITCHES - SMT
GaAs MMIC T/R SWITCH
DC - 3 GHz
Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Typ.
Max.
Units
0.5
0.5
0.7
1.4
0.7
0.8
1.0
1.8
dB
dB
dB
dB
Insertion Loss
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
22
20
17
13
25
24
21
17
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
20
16
13
9
28
21
17
11
dB
dB
dB
dB
Input Power for 1dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
35
34
39
38
dBm
dBm
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
55
55
60
60
dBm
dBm
10
24
ns
ns
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
14 - 8
Min.
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Insertion Loss
Isolation
0
0
-10
-1
ISOLATION (dB)
INSERTION LOSS (dB)
-0.5
-1.5
-2
-2.5
-20
-30
-3
-3.5
-4
-40
0
1
2
0
3
1
FREQUENCY (GHz)
2
3
FREQUENCY (GHz)
14
Return Loss
SWITCHES - SMT
INPUT RETURN LOSS (dB)
0
-10
-20
-30
-40
0
1
2
3
FREQUENCY (GHz)
Input 0.1 and 1.0 dB
Compression vs. Bias Voltage
Input Third Order
Intercept vs. Bias Voltage
45
65
60
1db at 1900MHz
900MHz
40
IP3 (dBm)
COMPRESSION (dBm)
1dB at 900MHz
35
0.1dB at 900MHz
55
50
1900MHz
45
30
40
0.1dB at 1900MHz
25
35
2
4
6
8
BIAS (Volts)
10
12
2
4
6
8
BIAS (Volts)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
12
14 - 9
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Compression vs. Bias Voltages
Carrier at 900 MHz
Carrier at 1900 MHz
Bias
Vdd
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Volts)
(dBm)
(dBm)
(dBm)
(dBm)
3
27
31
26
30
4
30
34
29
33
5
32
36
31
35
8
36
39
35
38
10
37
40
36
39
Caution: Do not operate in 1dB compression at power
levels above +35dBm and do not ‘hot switch’ power
levels greater than +23dBm (Vdd = +5Vdc).
14
Distortion vs. Bias Voltage
SWITCHES - SMT
1 Watt Carrier at 900 MHz
Bias
Vdd
Third
Order
Intercept
Second
Order
Intercept
(Volts)
(dBm)
3
43
4
48
Second
Harmonic
Second
Order
Intercept
Second
Harmonic
(dBm)
(dBc)
(dBm)
(dBm)
(dBc)
71
45
42
78
55
85
55
46
88
65
58
5
53
90
56
51
87
8
60
90
58
60
90
59
10
60
90
59
60
90
60
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc
Bias
14 - 10
1 Watt Carrier at 1900 MHz
Third
Order
Intercept
Bias
Current
Control Current
Control
Current
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA)
RF to RF1
Control Input*
Signal Path State
Vdd
(Vdc)
A
(Vdc)
3
0
0
30
-15
-15
OFF
OFF
3
0
Vdd
25
-25
0
ON
OFF
3
Vdd
0
25
0
-25
OFF
ON
5
0
0
110
-55
-55
OFF
OFF
5
0
Vdd
115
-100
-15
ON
OFF
5
Vdd
0
115
-15
-100
OFF
ON
10
0
0
380
-190
-190
OFF
OFF
10
0
Vdd
495
-275
-220
ON
OFF
10
Vdd
0
495
-220
-275
OFF
ON
5
-Vdd
Vdd
600
-600
225
ON
OFF
5
Vdd
-Vdd
600
225
-600
OFF
ON
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
RF to RF2
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Absolute Maximum Ratings
Bias Voltage Range (Vdd)
-0.2 to +12 Vdc
Control Voltage Range (A & B)
-0.2 to +Vdd Vdc
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
SWITCHES - SMT
14
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC174MS8
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC174MS8E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H174
XXXX
[2]
H174
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 11
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Typical Application Circuit
SWITCHES - SMT
14
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
14 - 12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC174MS8 / 174MS8E
v02.0805
GaAs MMIC T/R SWITCH
DC - 3 GHz
Evaluation Circuit Board
SWITCHES - SMT
14
List of Materials for Evaluation PCB 104124 [1]
Item
Description
J1 - J3
PCB Mount SMA RF Connector
J4 - J7
DC Pin
C1 - C3
100 pF capacitor, 0402 Pkg.
C4
10,000 pF capacitor, 0603 Pkg.
U1
HMC174MS8 / HMC174MS8E T/R Switch
PCB [2]
104122 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
The circuit board used in the final application should
be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evaluation circuit board shown above is available from
Hittite Microwave Corporation upon request.
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 13
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