JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC(T MMSTA56 TRANSISTOR (PNP) SOT–323 FEATURES Small Surface Mount Package General Poupose for Amplification MARKING:K2G MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4 V Collector cut-off current ICBO VCB=-80V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.5 nA DC current gain hFE IC=-100mA, IB=-10mA -0.25 V VCE=-1V, IC=-100mA -1.2 V Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT www.cj-elec.com VCE=-1V, IC=-10mA 50 VCE=-1V, IC=-100mA 50 VCE=-1V,IE=-100mA , f=100MHz 1 50 MHz B,Sep,2014 A,Jun,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 2 B,Sep,2014 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 3 B,Sep,2014 A,Jun,2014