TetraFET D5012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL B (4 pls) C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND DH PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE 2 PIN 5 GATE 1 DIM A B C D E F G H I J K M N mm 13.97 5.72 45° 9.78 1.65R 23.75 1.52R 30.48 19.17 0.13 2.54 1.52 5.08 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.26 0.02 0.13 0.13 0.50 Inches 0.550 0.225 45° 0.385 0.065R 0.935 0.060R 1.200 0.755 0.005 0.100 0.060 0.200 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.010 0.001 0.005 0.005 0.020 APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS Power Dissipation Drain – Source Breakdown Voltage * BVGSS ID(sat) Tstg Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Tj Maximum Operating Junction Temperature 290W 125V ±20V 9A –65 to 150°C 200°C * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6711 Issue 1 D5012UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source VGS = 0 ID = 100mA VDS = 50V VGS = 0 3 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 1.5A GPS Common Source Power Gain PO = 100W η Drain Efficiency VDS = 50V VSWR Load Mismatch Tolerance f = 500MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current 125 1 V 2.4 S 10 dB 50 % 20:1 — TOTAL DEVICE IDQ = 0.6A PER SIDE Ciss Input Capacitance VDS = 50V VGS = –5V f = 1MHz 180 pF Coss Output Capacitance VDS = 50V VGS = 0 f = 1MHz 75 pF Crss Reverse Transfer Capacitance VDS = 50V VGS = 0 f = 1MHz 4.5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 0.6°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6711 Issue 1