BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BDX53 : BDX53A : BDX53B : BDX53C Value 45 60 80 100 Units V V V V 45 60 80 100 V V V V V VCEO Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) 12 A IB Base Current 0.2 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDX53 : BDX53A : BDX53B : BDX53C Test Condition Min. Typ. Max. Units IC = 100mA, IB = 0 45 60 80 100 ICBO Collector Cut-off Current : BDX53 : BDX53A : BDX53B : BDX53C VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 200 200 200 200 µA µA µA µA ICEO Collector Cut-off Current : BDX53 : BDX53A : BDX53B : BDX53C VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 500 500 500 500 µA µA µA µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE * DC Current Gain VCE = 3V, IC = 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2 V VBE(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.5 V VF * Parallel Diode Forward Voltage IF= 3A IF= 8A 2.5 V V V V V V 750 1.8 2.5 * Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDX53/A/B/C Typical Characteristics 3.4 100000 VBE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 3V 10000 1000 3.2 IC = 250IB 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 100 0.1 1 0.8 0.1 10 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage 3.2 3.0 IC = 250IB 2.8 VF(sat)[V], FORWARD VOLTAGE 3.0 VCE(sat)[V], SATURATION VOLTAGE 10 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.6 0.1 1 0.4 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IF[A], FORWARD CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage 100 80 PD[W], POWER DISSIPATION IC Max. (Pulsed) us 10 10 s 1m IC Max. (Continuous) D C IC[A], COLLECTOR CURRENT 70 100us 1 BDX53 BDX53A BDX53B BDX53C 0.1 60 50 40 30 20 10 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 BDX53/A/B/C Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E