BC807 / BC808 BC807 / BC808 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2015-05-12 Type Code 1 1.3±0.1 3 2.4 ±0.2 0.4 Power dissipation – Verlustleistung +0.1 1.1 -0.2 2.9 ±0.1 +0.1 -0.05 2 1.9 ±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C 310 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC807 BC808 Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 310 mW 1) Collector current – Kollektorstrom (dc) - IC 800 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 1A IEM 1A - IBM 200 mA Tj TS -55...+150°C -55…+150°C Peak Emitter current – Emitter-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 100 160 250 – – – 250 400 630 40 – – – – 0.7 V – – 1.3 V 2 DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE - VCE = 1 V, - IC = 500 mA all groups hFE 2 Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ) - IC = 500 mA, - IB = 50 mA - VCEsat 2 Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung ) - IC = 500 mA, - IB = 50 mA 1 2 - VBEsat Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC807 / BC808 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VBE – – 1.2 V - ICB0 - ICB0 – – – – 100 nA 5 µA - IEB0 – – 100 nA fT – 100 MHz – CCBO – 12 pF – Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 20 V, (E open) - VCB = 20 V, Tj = 125°C, (E open) Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft < 420 K/W 1) RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BC817 / BC818 Marking of available current gain groups per type BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR Stempelung der lieferbaren Stromverstärkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS Typ BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 1 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG