PD -95441
SMPS MOSFET
VDSS
Applications
Reset Switch for Active Clamp
Reset DC-DC converters
l Lead-Free
IRF6218PbF
HEXFET® Power MOSFET
RDS(on) max
-150V 150m:@VGS = -10V
l
Benefits
l
l
l
ID
-27A
D
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
G
TO-220AB
S
Absolute Maximum Ratings
Max.
Units
Drain-to-Source Voltage
Parameter
-150
V
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-27
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
-19
IDM
Pulsed Drain Current
-110
VDS
PD @TC = 25°C
c
A
Maximum Power Dissipation
250
W
Linear Derating Factor
1.6
W/°C
8.2
-55 to + 175
V/ns
°C
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
Junction-to-Case
g
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
g
g
Typ.
Max.
Units
–––
0.61
°C/W
0.50
–––
–––
62
Notes through are on page 7
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1
06/28/04
IRF6218PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
-0.17
–––
V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
120
150
mΩ VGS = -10V, ID = -16A
VGS(th)
Gate Threshold Voltage
-3.0
–––
-5.0
V
IDSS
Drain-to-Source Leakage Current
µA
IGSS
–––
–––
-25
–––
–––
-250
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
V
VGS = 0V, ID = -250µA
f
VDS = VGS, ID = -250µA
VDS = -120V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
nA
VGS = -20V
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
S
Conditions
gfs
Qg
Forward Transconductance
11
–––
–––
VDS = -50V, ID = -16A
Total Gate Charge
–––
71
110
Qgs
Gate-to-Source Charge
–––
21
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
32
–––
VGS = -10V
td(on)
Turn-On Delay Time
–––
21
–––
VDD = -75V
tr
Rise Time
–––
70
–––
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 3.9Ω
tf
Fall Time
–––
30
–––
VGS = -10V
Ciss
Input Capacitance
–––
2210
–––
VGS = 0V
Coss
Output Capacitance
–––
370
–––
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
89
–––
Coss
Output Capacitance
–––
2220
–––
Coss
Output Capacitance
–––
170
–––
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
340
–––
VGS = 0V, VDS = 0V to -120V
ID = -16A
nC
ns
pF
VDS = -120V
f
ID = -16A
f
ƒ = 1.0MHz
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
210
mJ
–––
-16
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
-27
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-110
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
-1.6
V
p-n junction diode.
TJ = 25°C, IS = -16A, VGS = 0V
trr
Reverse Recovery Time
–––
150
–––
ns
Qrr
Reverse Recovery Charge
–––
860
–––
nC
2
c
MOSFET symbol
A
D
G
S
f
TJ = 25°C, IF = -16A, VDD = -25V
di/dt = -100A/µs
f
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IRF6218PbF
1000
1000
100
BOTTOM
10
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
1
-4.5V
0.1
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-4.5V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
T J = 25°C
T J = 175°C
10
VDS = 50V
≤60µs PULSE WIDTH
1.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (Α)
1
ID = -27A
VGS = -10V
2.0
1.5
1.0
0.5
2
4
6
8
10
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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12
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF6218PbF
100000
-V GS, Gate-to-Source Voltage (V)
ID= -16A
C oss = C ds + C gd
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
1000
Coss
Crss
100
VDS= 30V
8.0
6.0
4.0
2.0
10
0.0
1
10
100
0
-V DS, Drain-to-Source Voltage (V)
30
40
50
60
70
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
20
1000
1000.00
100.00
T J = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10.00
T J = 25°C
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1msec
10msec
1
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1.00
VDS= 120V
VDS= 75V
10.0
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6218PbF
30
RD
V DS
-I D, Drain Current (A)
25
VGS
D.U.T.
RG
20
+
VDD
VGS
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
Ci= τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
τC
τ
τ3
Ri (°C/W) τi (sec)
0.264
0.000285
0.206
0.001867
0.140
0.013518
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to -Source On Resistance (mΩ)
RDS (on) , Drain-to-Source On Resistance (m Ω)
IRF6218PbF
400
350
300
VGS = -10V
250
200
150
100
0
20
40
60
1000
900
800
700
600
ID = -27A
500
400
300
200
100
0
80
4
-I D , Drain Current (A)
5
6
7
8
9
10
11
12
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
-VGS
50KΩ
.2µF
12V
QGS
.3µF
QGD
900
D.U.T.
+VDS
VG
VGS
Charge
-3mA
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
VDS
I AS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
EAS , Single Pulse Avalanche Energy (mJ)
-
ID
-4.6A
-6.3A
BOTTOM -16A
800
TOP
700
600
500
400
300
200
100
0
25
tp
V(BR)DSS
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF6218PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
0.55 (.022)
0.46 (.018)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: T HIS IS AN IRF 1010
LOT CODE 1789
AS S EMB LED ON WW 19, 1997
IN T HE AS S E MB LY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNAT IONAL
RE CT IFIER
LOGO
AS S EMB LY
LOT CODE
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = -17A.
PART NUMB ER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rq is measured at T J of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
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7