CEL NE52418 Necs l to s band low noise amplifier npn gaas hbt Datasheet

NEC's L TO S BAND
LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
•
NE52418
PACKAGE DIMENSIONS (Units in mm)
HIGH POWER GAIN:
GA = 16 dB TYP , MSG = 18 dB TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
LOW NOISE:
NF = 1.0 dB TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
•
OIP3 = +25 dBm TYP
at f = 2 GHZ, VCE = 2 V, IC = 10 mA, ZS = ZOPT ,1TONE
•
4 PIN SUPER MINI MOLD PACKAGE
•
GROUNDED EMITTER TRANSISTOR
2.1 ± 0.2
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
2.0 ± 0.2
0.65
2
0.60
V45
•
PACKAGE OUTLINE 18
1
3 0.65
1.3
0.65
4
+0.10
0.4 -0.05
DESCRIPTION
0.3
NEC's NE52418 is a low cost NPN GaAs HBT(InGaP)
suitable for front end LNA's in L/S band mobile communications applications. The NE52418 is housed in a 4-pin super
mini-mold package, making it ideal for high-density design.
0.9 ± 0.1
0 to 0.1
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance
+0.10
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Emitter
4. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE52418
18
UNITS
MIN
TYP
MAX
IEBO
Emitter to Base Leakage Current at VEBO = 3 V
µA
—
0.2
1.0
ICBO
Collector to Base Leakage Current at VCBO = 3 V
µA
—
0.2
1.0
hFE
DC Current Gain at VCE = 2 V, IC = 3 mA
—
100
140
180
NF
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 Ghz, ZS = ZL = 50 Ω
dB
—
1.0
1.5
Ga
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 Ghz,
dB
14
16
—
ZS = ZL = 50 Ω
|S21e|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 Ghz
dB
—
20
—
OIP3
Out Third - Order Distortion Intercept Point at VCE = 2 V,
dBm
—
25
—
f = 2 GHz, ZS = ZL = ZOPT, IC = 10 mA, 1 tone
California Eastern Laboratories
NE52418
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
RECOMMENDED
OPERATING CONDITIONS (TA = +25°C)
VCEO
Collector to Emitter Voltage
V
5.0
SYMBOLS
PARAMETERS
VCBO
Collector to Base Voltage
V
3.0
VCE
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
V
3.0
IC
PIN
IC
Collector Current
mA
40
IB
Base Current
mA
0.3
PT
Total Power Dissipation
mW
150
Tj
Junction Temperature
°C
+125
TSTG
Storage Temperature
°C
-65 to +125
UNITS MIN. TYP. MAX.
V
1.5
2.0
3.0
Collector Current
mA
–
–
30
Input Power
dBm
–
–
0
Note:
1. Operation in excess of any of these parameters
may result in permanent damage.
TYPICAL PERFORMANCE CURVE (TA = 25°C)
NOISE FIGURE vs. FREQUENCY
1.4
Noise Figure, NF (dB)
1.2
1
0.8
0.6
0.4
0.2
2 V 5 mA
2 V 10 mA
0
0
1
2
3
4
5
6
7
Frequency, F (GHz)
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE52418
VCE = 2.0 V, IC = 3 mA
FREQUENCY
GHz
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
S11
MAG
0.601
0.505
0.438
0.384
0.346
0.328
0.327
0.326
0.344
0.366
0.382
0.402
0.431
0.46
0.516
0.572
0.617
0.664
0.699
0.720
0.728
0.720
0.701
0.643
0.587
S21
ANG
-82.0
-98.5
-115.1
-132.3
-148.8
-166.8
178.2
164.7
152.8
140.7
130.2
120.3
110.9
102.2
94.2
87.1
78.8
73.4
66.5
61.6
55.5
49.1
43.4
38.2
36.7
MAG
5.571
4.898
4.405
4.008
3.645
3.333
3.100
2.894
2.708
2.573
2.445
2.320
2.209
2.124
2.023
1.912
1.782
1.663
1.513
1.373
1.228
1.073
0.910
0.737
0.523
S12
ANG
107.2
94.9
83.4
73.6
64.2
54.9
46.7
38.3
30.2
22.1
14.2
6.2
-2.5
-11.7
-21.2
-31.0
-41.3
-51.2
-61.8
-72.1
-83.1
-34.6
-107.7
-121.2
-137.3
MAG
0.064
0.067
0.073
0.077
0.078
0.083
0.085
0.094
0.099
0.108
0.121
0.128
0146
0.161
0.175
0.191
0.201
0.211
0.210
0.211
0.207
0.196
0.172
0.150
0.119
S22
ANG
47.4
41.0
38.5
38.5
39.2
38.7
41.0
41.7
41.6
41.6
40.7
37.2
35.6
32.0
26.1
19.7
13.7
6.4
-0.7
-9.0
-17.2
-26.2
-33.0
-39.8
-39.1
MAG
0.733
0.669
0.619
0.583
0.550
0.525
0.509
0.502
0.485
0.474
0.457
0.428
0.410
0.398
0.395
0.436
0.475
0.541
0.594
0.636
0.695
0.747
0.789
0.864
0.893
ANG
-38.7
-43.7
-48.5
-53.5
-58.7
-64.5
-70.7
-76.9
-84.4
-90.1
-97.9
-107.0
-117.1
-132.9
-151.4
-170.0
172.1
156.3
140.7
127.1
113.6
99.9
86.8
75.9
65.4
NE52418
TYPICAL SCATTERING PARAMETERS, cont. (TA = 25°C)
NE52418
VCE = 2.0 V, IC = 10 mA
FREQUENCY
GHz
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
S11
MAG
0.306
0.237
0.191
0.170
0.160
0.167
0.181
0.195
0.216
0.245
0.266
0.295
0.325
0.370
0.423
0.476
0.528
0.580
0.620
0.640
0.651
0.636
0.600
0.516
0.482
S21
ANG
-95.3
-111.7
-128.4
-148.2
-168.5
171.7
156.2
144.5
134.5
127.0
117.7
109.6
103.3
96.3
89.5
83.4
76.3
71.2
64.7
60.7
54.1
47.4
42.2
39.5
47.1
MAG
8.717
7.212
6.201
5.469
4.904
4.433
4.093
3.813
3.553
3.372
3.192
3.023
2.897
2.793
2.587
2.579
2.456
2.317
2.180
2.022
1.875
1.685
1.466
1.172
0.802
S12
ANG
91.6
82.2
73.3
65.9
58.7
51.4
44.6
37.7
30.7
23.7
16.8
9.8
2.0
-6.0
-14.5
-23.3
-33.0
-42.3
-52.8
-63.2
-74.8
-88.3
-103.2
-120.4
-139.8
MAG
0.051
0.060
0.067
0.077
0.086
0.094
0.106
0.115
0.126
0.133
0.143
0.152
0.165
0.179
0.188
0.201
0.208
0.210
0.213
0.212
0.205
0.191
0.173
0.145
0.112
S22
ANG
59.1
60.0
55.4
55.5
54.3
53.1
51.6
48.5
45.8
42.2
38.0
35.1
30.8
27.3
21.0
15.5
8.6
2.4
-5.5
-12.6
-20.4
-29.2
-37.2
-42.4
-39.1
MAG
0.556
0.512
0.478
0.451
0.430
0.412
0.398
0.389
0.376
0.363
0.343
0.311
0.293
0.271
0.260
0.292
0.337
0.403
0.461
0.522
0.588
0.660
0.731
0.834
0.891
ANG
-37.9
-40.1
-43.7
-47.6
-52.8
-57.5
-63.5
-69.9
-77.3
-82.9
-90.1
-97.6
-106.7
-123.9
-145.1
-166.3
172.9
156.1
141.9
128.6
115.5
103.2
90.1
78.2
56.2
NE52418
VCE = 2.0 V, IC = 20 mA
FREQUENCY
GHz
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
S11
MAG
0.188
0.140
0.117
0.116
0.124
0.146
0.164
0.184
0.207
0.238
0.262
0.292
0.322
0.362
0.412
0.471
0.517
0.565
0.607
0.630
0.635
0.616
0.574
0.476
0.442
S21
ANG
-105.5
-124.6
-147.2
-170.3
169.2
150.9
138.1
129.5
124.1
116.7
110.1
102.7
97.6
91.4
85.1
79.6
72.9
68.3
62.5
58.3
51.3
44.7
39.1
37.7
48.7
MAG
9.306
7.618
6.514
5.708
5.092
4.595
4.239
3.929
3.675
3.470
3.278
3.108
2.971
2.857
2.753
2.641
2.513
2.387
2.264
2.091
1.960
1.783
1.571
1.265
0.859
S12
ANG
85.1
76.9
69.1
62.5
56.0
49.1
42.8
36.2
29.6
22.8
16.1
9.5
2.1
-5.7
-13.8
-22.4
-31.4
-40.7
-50.8
-60.7
-72.2
-85.7
-101.2
-119.6
-139.7
MAG
0.049
0.061
0.070
0.081
0.091
0.102
0.112
0.121
0.131
0.145
0.154
0.165
0.174
0.183
0.196
0.203
0.209
0.219
0.213
0.212
0.206
0.196
0.173
0.143
0.107
S22
ANG
63.2
63.4
63.2
61.0
58.6
56.2
52.0
49.2
45.9
42.3
37.9
33.5
27.1
24.6
19.0
13.6
6.2
-0.8
-7.8
-14.5
-22.0
-31.7
-40.0
-45.5
-43.6
MAG
0.489
0.453
0.429
0.415
0.390
0.349
0.361
0.350
0.336
0.323
0.299
0.267
0.246
0.221
0.210
0.243
0.292
0.359
0.424
0.476
0.548
0.619
0.700
0.815
0.887
ANG
-35.0
-37.3
-40.1
-44.6
-49.2
-55.5
-51.5
-67.5
-75.1
-81.2
-88.5
-96.6
-105.1
-124.7
-147.6
-171.7
167.0
151.4
137.4
124.7
113.2
101.4
89.7
78.0
66.5
NE52418
PACKAGE DIMENSIONS (Units in mm)
PART
NUMBER
PACKAGE OUTLINE 18
2.1 ± 0.2
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
2
0.65
0.60
V45
2.0 ± 0.2
ORDERING INFORMATION
NE52418-T1-A
QUANTITY
3 K pcs/Reel
Note: 8-mm wide embossed tape, pin 3 (Emitter),
pin 4 (Collector) face perforated side of tape.
3 0.65
1.3
0.65
1
4
+0.10
0.4 -0.05
0.3
0.9 ± 0.1
0 to 0.1
+0.10
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Emitter
4. Collector
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your CEL Sales Representative.
SOLDERING
METHOD
Infrared Reflow
VPS
WAVE SOLDERING
PARTIAL HEATING
SOLDERING
CONDITIONS
Package Peak Temperature: 230 ˚C or below
Time: 30 seconds or less ( at 210 ˚C)
Count: 3, Exposure limit: None1
Package Peak Temperature: 215 ˚C or below
Time: 40 seconds or less (at 200 ˚C)
Count: 2, Exposure limit: None1
Soldering Bath Temperature: 260 ˚C or below
Time: 10 seconds or less (at 200 ˚C)
Count: 1, Exposure limit: None1
Pin Temperature: 300 ˚C or below
Time: 3 seconds or less (per side of device)
Exposure limit: None1
RECOMMENDED CONDITION
SYMBOL
IR30-00-3
VP15-00-2
WS60-00-1
–
Note:
1. After opening the dry pack, keep it in a place below 25 ˚C and 65% RH for the allowable storage period.
CAUTION:
Do not use different soldering methods together (except for partial heating).
PRECAUTION:
Avoid high static voltage and electric fields.
NE52418
NONLINEAR MODEL
2.1 ± 0.2
SCHEMATIC
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
2.0 ± 0.2
0.65
3
2
0.65
1.3
0.60
0.65
1
4
+0.10
0.4 -0.05
0.3
0.9 ± 0.1
+0.10
0.15 -0.05
0 to 0.1
BJT NONLINEAR MODEL PARAMETERS (1)
ADDITIONAL PARAMETERS
Parameters
NE52418
Parameters
Q1
Parameters
Q1
IS
7.8e-25
MJC
0.07
CCB
0.02e-12
BF
158
XCJC
0.2
CCE
0.19e-12
NF
1.006
CJS
0
LB
0.83e-9
VAF
1000
VJS
0.75
LC
0.8e-9
0
LE
0.2e-9
IKF
1.95
MJS
ISE
6.36e-18
FC
0.5
CCBPKG
0.002e-12
NE
1.92
TF
2e-12
CCEPKG
0.05e-12
3
CBEPK
0.15e-12
BR
1
XTF
NR
1
VTF
1
LBX
0.55e-9
VAR
1000
ITF
0.05
LCX
0.1e-9
IKR
1000
PTF
0
LEX
0.05e-9
ISC
0
TR
50e-12
NC
2.0
EG
1.51
RE
1.5
XTB
0
3
RB
7
XTI
RBM
1
KF
0
IRB
1000
AF
1
RC
1.2
CJE
0.27
VJE
0.99
MJE
0.21
CJC
0.065e-12
VJC
0.73
MODEL RANGE
Frequency: 0.3 to 10 GHz
Bias:
VCE = 0.7 V to 2 V, IC = 1 mA to 10 mA
Date:
02/2002
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/22/03
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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