Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain IC = 10 mA; VCE = 10 V Transition frequency at f = 35 MHz IC = 10 mA; VCE = 20 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 20 V Continental Device India Limited Data Sheet VCBO VCEO VEBO IC Ptot Tj CMBT A42 max. 300 max. 300 max. max. max. max. 6 500 250 150 hFE min. 40 fT min. 50 Cre max. 3 A43 200 V 200 V V mA mW °C MHz 4 pF Page 1 of 3 CMBTA42 CMBTA43 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj max. 300 max. 300 max. max. max. –55 max. 200 V 200 V 6 V 500 mA 250 mW to +150 °C 150 °C THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient = 500 Rth j–a CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage CMBTA42 V(BR)CEO min. 300 IC = 1 mA; IB = 0 Collector–base breakdown voltage V(BR)CBO min. 300 IC = 100 µA; IE = 0 Emitter–base breakdown voltage V(BR)EBO min. IE = 100 µA; IC = 0 Collector cut–off current ICBO max. 0.1 IE = 0; VCB = 200 V ICBO max. – IE = 0; VCB = 160 V Emitter cut–off current IEBO max. 0.1 IC = 0; VBE = 6 V IEBO max. – IC = 0; VBE = 4 V Feedback capacitance at f = 1 MHz Cre max. 3 IE = 0; VCB = 20 V Saturation voltages VCEsat max. IC = 20 mA; IB = 2 mA VBEsat max. IC = 20 mA; IB = 2 mA D.C. current gain hFE min. IC = 1 mA; VCE = 10 V hFE min. IC = 10 mA; VCE = 10 V hFE min. IC = 30 mA; VCE = 10 V Transition frequency at f = 35 MHz fT min. IC = 10 mA; VCE = 20 V Continental Device India Limited Data Sheet K/W A43 200 V 200 V 6 V – µA 0.1 µA – µA 0.1 µA 4 0.5 0.9 pF V V 25 40 40 50 MHz Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3