NJ7N60 POWER MOSFET 7.4A 600V N-CHANNEL POWER MOSFET DESCRIPTION The NJ7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * VDS = 600V ID = 7.4A * RDS(ON) = 1.0 ohm@VGS = 10V (7N60) * RDS(ON) = 1.2 ohm@VGS = 10V (7N60-F/7N60-A/7N60-D /7N60-L) * Ultra Low Gate Charge (Typical 29 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 16pF ) * Fast switching capability * Avalanche energy specified *Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package NJ7N60-LI NJ7N60-BL NJ7N60F-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tube NJ7N60 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 Power Dissipation TO-220F SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD RATINGS 600 ±30 7.4 7.4 29.6 530 14.2 4.5 142 48 UNIT V V A A A mJ mJ V/ns W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 ȍ, Starting TJ = 25°C 4. ISD7.4A, di/dt200A/ȝs, VDDBVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL șJA TO-220 TO-220F șJC RATINGS 62.5 0.88 2.6 UNIT °C/W °C/W NJ7N60 POWER MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS VGS = 0V, ID = 250ȝA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V Forward Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage TemperatureʳCoefficient ƸBVDSSƸTJ ID=250ȝA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250ȝA 7N60 7N60-F VGS = 10V, Static Drain-Source On-State Resistance RDS(ON) 7N60-M ID = 3.7A 7N60-Q 7N60-R DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =7.4A, RG =25ȍʳ(Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, Gate-Source Charge QGS VGS=10Vʳ(Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A/ȝs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width300ȝs, Duty cycle2% 2. Essentially independent of operating temperature BVDSS IDSS MIN TYP MAX UNIT 600 1 100 -100 V ȝA nA nA V/°C 0.83 0.93 0.93 0.93 0.93 4.0 1.0 1.2 1.2 1.2 1.2 V ȍ ȍ ȍ ȍ ȍ 16 1400 180 21 pF pF pF 70 170 140 130 ns ns ns ns 38 nC nC nC 1.4 V 7.4 A 29.6 A 0.67 2.0 29 7 14.5 320 2.4 ns ȝC CLASSIFICATION OF RDS(ON) RANK VALUE 1.0ȍ F 1.2ȍ A 1.2ȍ D 1.2ȍ L 1.2ȍ NJ7N60 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ7N60 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width 1ȝs Duty Factor0.1% Switching Test Circuit 12V 0.2μF 50k 0.3μF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms NJ7N60 POWER MOSFET TYPICAL CHARACTERISTICS On-State Characteristics Transfer Characteristics 10 VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V 10 Top: 1 1 0.1 Notes: 1. 250μs Pulse Test 2. TC=25°C 0.1 1 Notes: 1. VDS=50V 2. 250μs Pulse Test 0.1 10 4 2 6 8 10 Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V) On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature 6 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ƻ) 10 5 VGS=20V 4 VGS=10V 3 2 1 Notes: 1. VGS=0V 2. 250μs Test Note: TJ=25°C 0.1 0 0 2 4 6 8 Drain Current, ID (A) 1 10 12 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) 1.6 NJ7N60 POWER MOSFET Drain-Source On-Resistance, RDS(ON) (Normalized) TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS (Normalized) Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve 7.5 1 6.25 D=0.5 5.0 0.2 0.1 0.1 3.75 0.05 0.02 2.5 0.01 Single Pulse 0.01 Notes: 1. LJJC (t) = 1.18°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×LJJC (t) 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) ʳʳʳʳ Safe Operating Area ̢ 600V Operation in This Area is Limited by RDS(on) 101 100μs 1ms 10ms 100 DC 10-1 10-2 100 ʳʳʳʳ Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 101 102 Drain-Source Voltage, VDS (V) 600 103 1.25 0 25 50 75 100 125 Case Temperature, TC (°C) 150