Email: [email protected] Website: www.olitech-elec.com Bidirectional Diac LLDB3 / LLDB4 Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts (DB3,DB4). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming,universa motor speed control ,and heat control. Glass Case MiniMELF Dimensions in inches and (mm) 0.019 (0.48) 0.142 (3.6) 0.063 (1.6) 0.011 (0.28) 0.055 (1.4) 0.126 (3.2) Mechanical Data Case: MiniMELF Glass Case (SOD-80) Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 0.002 ounce, 0.05grams Absolute Maximum Ratings O Tamb =25 C unless otherwise specified Parameter Repetitive peak on-state current Power dissipation Junction temperature Storage temperature Electrical Characteristics Symbol Test Condition tp = 20 ms, f = 120Hz O l = 4 mm, TL 25 C Unit A mW O C O C Value 2 150 125 - 40 ~ 125 ITRM Ptot Tj Tstg Tamb =25 OC unless otherwise specified Parameter Part LLDB3 LLDB4 Test Condition Breakover voltage * C = 22 nF ** Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time * Leakage current * Peak current * C = 22 nF ** VBO and VF @ 10 mA See diagram 3 (R=20W) C = 22 nF ** See diagram 2 VR = 0.5 VBO max See diagram 3 (Gate) Symbol Min 28 35 VBO VBO VBO1-VBO2 — DV V— O — IBO tr IR IP Typ. Max 36 45 3 32 40 5 5 100 2 10 Unit V V V V V mA ms mA 0.30 A * Applicable to both forward and reverse directions. ** Connected in parallel to the device. Diagram 1: Voltage -current characteristic curve Diagram 2: Rise time measurement Diagram 3: Test circuit +I F 10 mA Ip 500 kW 90 % -V D.U.T. Rs=0 10 kW I BO IB +V 220V 50Hz 0.5 V BO DV VF 10 % V BO tr Ip 0.1 mF Vo R=20W T410 - IF Page:P2-P1 OLITECH ELECTRONICS CO. LTD. Email: [email protected] Website: www.olitech-elec.com Bidirectional Diac LLDB3 / LLDB4 Ratings and Characteristic Curves Tamb = 25 OC unless otherwise specified Relative variation of VBO versus junction temperature (typical values). V BO <Tj> / V BO <Tj=25 OC> 1.10 1.05 1.00 0.95 0.90 0.85 0.80 25 75 50 100 125 O T j ( C) Repetitive peak pulse current versus pulse duration (maximum values). 20.0 f =120Hz O T j initial=25 C I TRM (A) 10.0 1.0 0.1 1 10 100 tp (ms) Time duration while current pulse is higher 50mA versus C and Rs (typical values). 40 68W T j =25 OC 35 47W tp (ms) 30 25 33W 20 15 10 10W 5 22W 0W 0 10 20 50 100 200 500 C (nF) OLITECH ELECTRONICS CO. LTD. Page:P2-P2