SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR PARTMARKING DETAIL - COMPLEMENTARY TYPE - FMMT5087 FMMT5087 - 2m FMMT5087R - 3m E C FMMT5088 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -3 V Continuous Collector Current IC -100 mA Power Dissipation at Tamb=25°C Ptot 330 mW -55 to +150 °C Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector-Base Cut-Off Current ICBO MIN. MAX. UNIT CONDITIONS. -10 -50 nA µA VCB=-10V, IE=0 VCB=-35V, IE=0 Emitter-Base Current IEBO -50 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -300 mV IC=-10mA, IB=-1mA Base-Emitter ON Voltage VBE(on) -850 mV IC=-1mA, VCE=-5V Static Forward Current Transfer Ratio hFE 250 250 250 Transition Frequency fT 40 Small Signal Current hfe Transfer Ratio 250 800 IC=-100µ A, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V* MHz 900 IC=-500µ A, VCE=-5V f=20MHz IC=-1mA, VCE=-5V f=1KHz Noise Figure N 2 dB IC=200µ A, VCE=-5V, Rg=2KΩ f=30Hz to 15KHz at 2dB points Output Capacitance Cobo 4 pF VCB=-5V, f=140MHz, IE=0 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device