ISC MBRB20200CT Schottky barrier rectifier Datasheet

INCHANGE Semiconductor
MBRB20200CT
Schottky Barrier Rectifier
FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
200
V
IF(AV)
Average Rectified Forward Current
20
A
IFSM
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed on
rated load conditions
150
A
Junction Temperature
-65~150
℃
Storage Temperature Range
-65~175
℃
TJ
Tstg
isc website:www.iscsemi.com
1
isc & iscsemi is registered trademark
INCHANGE Semiconductor
Schottky Barrier Rectifier
MBRB20200CT
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
UNIT
2.0
℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
VF
IR
PARAMETER
Maximum
Voltage
Maximum
Current
Instantaneous
Instantaneous
CONDITIONS
Forward
Reverse
isc website:www.iscsemi.com
TYP
MAX
UNIT
IF=10A ; Tj=25℃
0.9
IF=10A ; Tj= 125℃
0.8
IF=20A ; Tj= 25℃
1.0
IF=20A ; Tj= 125℃
0.9
VR= VRWM;Tj= 25℃
1
mA
VR= VRWM;Tj= 125℃
50
mA
2
V
isc & iscsemi is registered trademark
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