Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB09N06FP Features BVDSS ID @ VGS=10V, TC=25°C 60V ID @ VGS=10V, TA=25°C RDSON(TYP) @ VGS=10V, ID=30A 11A 6.4mΩ RDSON(TYP) @ VGS=4.5V, ID=20A 7.8mΩ 60A • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline TO-220FP MTB09N06FP G：Gate D：Drain S：Source G D S Ordering Information Device MTB09N06FP-0-UB-S Package TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB09N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=1mH, ID=30A, VDD=30V Repetitive Avalanche Energy@ L=0.1mH TC=25°C Power Dissipation TC=100°C TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS 60 ±30 62 60 43.8 240 11 8.8 30 450 6 68 34 2 1.3 -55~+175 (Note 5) ID (Note 5) (Note 5) IDM (Note 4) (Note 2) (Note 2) (Note 6) (Note 6) (Note 3) IDSM IAS EAS EAR (Note 1) PD (Note 1) (Note 2) (Note 2) PDSM Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s Thermal Resistance, Junction-to-ambient, max Symbol RθJC (Note 1) (Note 1) RθJA Value 2.2 15 62.5 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. . 2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. Pulse width ≤300μs pulses and duty cycle ≤0.5%. 5. Calculated continuous drain current based on maximum allowable junction temperature. 6. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=30V 7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTB09N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 3/8 Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Min. Typ. Max. 60 1 - 30 6.4 7.8 2.5 ±100 1 10 8 10.5 39.6 5 12.4 13.4 20.6 49.4 15.4 1678 264 142 2.4 - 0.85 18.3 13.6 60 1.2 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *VSD *trr *Qrr - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±30V VDS =60V, VGS =0V VDS =48V, VGS =0V, Tj=55°C VGS =10V, ID=30A VGS =4.5V, ID=20A nC ID=20A, VDS=30V, VGS=10V ns VDD=30V, ID=20A, VGS=10V, RG=3Ω pF VGS=0V, VDS=30V, f=1MHz Ω f=1MHz A V ns nC IS=30A, VGS=0V IF=30A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTB09N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 180 10V,9V,8V,7V,6V 120 5V 90 4.5V 60 VGS=3V BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current (A) 150 4V 3.5V 30 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V 10 VGS=10V 1 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 100 0 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2.4 ID=20A 80 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 60 40 20 0 0 MTB09N06FP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 2 VGS=10V, ID=20A RDSON@Tj=25°C : 6.4mΩ typ. 1.6 1.2 0.8 VGS=4.5V, ID=20A RDS(ON) @Tj=25°C : 7.8mΩ typ. 0.4 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 100 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=5V 0.1 Ta=25°C Pulsed 0.01 0.001 8 6 4 VDS=30V ID=20A 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 Qg, Total Gate Charge(nC) 50 60 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 80 1000 100 ID, Maximum Drain Current(A) RDSON Limited ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 10μs 100μs 10 1ms 10ms 1 TC=25°C, Tj=175°C VGS=10V, RθJC=2.2°C/W Single Pulse 100ms DC Silicon limit 70 60 50 40 Package limit 30 20 VGS=10V, RθJC=2.2°C/W 10 0 0.1 0.1 MTB09N06FP 1 10 100 VDS, Drain-Source Voltage(V) 1000 0 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 6/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 2000 180 1800 160 VDS=10V 1400 120 Power (W) ID, Drain Current(A) TJ(MAX) =175°C TC=25°C RθJC=2.2°C/W 1600 140 100 80 1200 1000 800 60 600 40 400 20 200 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.2 ° C/W 0.05 0.02 0.01 0.01 0.001 1.E-05 MTB09N06FP Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB09N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 8/8 TO-220FP Dimension Marking: Device Name Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP B09 N06 □□□□ Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB09N06FP CYStek Product Specification