HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns (max.) – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) – IDT7132/42LA Active: 325mW (typ.) Standby: 1mW (typ.) ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT7132SA/LA IDT7142SA/LA MASTER IDT7132 easily expands data bus width to 16-or-more bits using SLAVE IDT7142 On-chip port arbitration logic (IDT7132 only) BUSY output flag on IDT7132; BUSY input on IDT7142 Battery backup operation —2V data retention (LA only) TTL-compatible, single 5V ±10% power supply Available in 48-pin DIP, LCC and Flatpack, and 52-pin PLCC packages Military product compliant to MIL-PRF-38535 QML Industrial temperature range (–40°C to +85°C) is available for selected speeds Functional Block Diagram OEL OER CEL R/WL CER R/WR I/OOL-I/O7L I/O Control I/OOR-I/O7R I/O Control m BUSYL(1,2) A10L A0L BUSYR(1,2) Address Decoder MEMORY ARRAY 11 CEL OEL R/WL A10R Address Decoder A0R 11 ARBITRATION LOGIC CER OER R/WR 2692 drw 01 NOTES: 1. IDT7132 (MASTER): BUSY is open drain output and requires pullup resistor of 270Ω. IDT7142 (SLAVE): BUSY is input. 2. Open drain output: requires pullup resistor of 270Ω. JUNE 2004 1 ©2004 Integrated Device Technology, Inc. DSC-2692/16 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Description The IDT7132/IDT7142 are high-speed 2K x 8 Dual-Port Static RAMs. The IDT7132 is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a “MASTER” Dual-Port RAM together with the IDT7142 “SLAVE” Dual-Port in 16-bit-or-more word width systems. Using the IDT MASTER/ SLAVE Dual-Port RAM approach in 16-or-more-bit memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Both devices provide two independent ports with separate control, address, and l/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 325mW of power. Low-power (LA) versions offer battery backup data retention capability, with each DualPort typically consuming 200µW from a 2V battery. The IDT7132/7142 devices are packaged in a 48-pin sidebraze or plastic DIPs, 48-pin LCCs, 52-pin PLCCs, and 48-lead flatpacks. Military grade product is manufactured in compliance with the latest revision of MIL-PRF-38535 QML, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. 6 5 4 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L 3 2 OER R/WR BUSYR A10R INDEX VCC CER VCC CER R/WR BUSYR A10R OER A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R I/O7R I/O6R I/O5R I/O4R I/O3R I/O2R I/O1R I/O0R BUSYL R/WL CEL 1 48 2 47 3 46 4 45 5 44 6 43 7 IDT7132/ 42 8 7142 41 9 P or C 40 10 39 11 P48-1(4) 38 12 37 & 13 C48-2(4) 36 14 35 15 48-Pin 34 16 DIP 33 17 Top 32 18 View(5) 31 19 30 20 29 21 28 22 27 23 26 24 25 48 47 46 45 44 43 42 41 40 39 IDT7132/42L48 or F L48-1(4) 38 & 37 (4) F48-1 36 48-Pin LCC/ Flatpack (5) 35 Top View 34 33 32 31 22 23 24 25 26 27 28 29 30 1 A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R I/O7R I/O6R , I/O3L I/O4L I/O5L I/O6L I/O7L GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R CEL R/WL BUSYL A10L OEL A0L A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L I/O4L I/O5L I/O6L I/O7L GND A0L OEL A10L Pin Configurations(1,2,3) , 2692 drw 02 NOTES: 1. All VCC pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. P48-1 package body is approximately .55 in x 2.43 in x .18 in. C48-2 package body is approximately .62 in x 2.43 in x .15 in. L48-1 package body is approximately .57 in x .57 in x .68 in. F48-1 package body is approximately .75 in x .75 in x .11 in. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. Capacitance(1) Symbol 2692 drw 03 (TA = +25°C,f = 1.0MHz) Parameter CIN Input Capacitance COUT Output Capacitance Conditions(2) Max. Unit VIN = 3dV 11 pF VOUT = 3dV 11 pF 2692 tbl 00 NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 3V to 0V. 2 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges 7 6 5 4 3 2 8 9 10 11 12 13 14 15 16 17 18 19 20 52 51 50 49 48 47 1 46 45 44 43 42 41 40 39 38 37 36 35 34 IDT7132/42J J52-1(4) 52-Pin PLCC Top View(5) OER A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R N/C I/O7R 21 22 23 24 25 26 27 28 29 30 31 32 33 2692 drw 04 I/O4L I/O5L I/O6L I/O7L N/C GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L R/WR BUSYR N/C A10R INDEX R/WL CEL VCC CER A0L OEL A10L N/C BUSYL Pin Configurations(1,2,3) (con't.) NOTES: 1. All VCC pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. Package body is approximately .75 in x .75 in x .17 in. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. Recommended Operating Temperature and Supply Voltage(1,2) Absolute Maximum Ratings(1) Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Commercial & Industrial -0.5 to +7.0 Military -0.5 to +7.0 Grade V Military Temperature Under Bias -55 to +125 TSTG Storage Temperature -65 to +150 -65 to +150 IOUT DC Output Current 50 50 TBIAS Unit -65 to +135 o C Vcc -55 C to+125 C 0V 5.0V + 10% 0 C to +70 C 0V 5.0V + 10% -40 C to +85 C 0V 5.0V + 10% O Industrial o GND O Commercial C Ambient Temperature O O O O 2692 tbl 02 NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. 2. Industrial temperature: for specific speeds, packages and powers contact your sales office. mA 2692 tbl 01 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%. Recommended DC Operating Conditions Symbol Parameter V CC Supply Voltage GND Ground Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V VIH Input High Voltage 2.2 ____ VIL Input Low Voltage -0.5(1) ____ NOTES: 1. VIL (min.) = -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 10%. 3 6.42 (2) 6.0 0.8 V V 2692 tbl 03 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,5,8) (VCC = 5.0V ± 10%) 7132X20(2) 7142X20(2) Com'l Only Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - All CMOS Level Inputs) Full Standby Current (One Port - All CMOS Level Inputs) Test Condition Version CEL = CER = VIL, Outputs Disabled f = fMAX(3) CEL = CER = VIH, f = fMAX(3) CE"A" = VIL and CE"B" = VIH(6) Active Port Outputs Disabled f=fMAX(3) CEL and CER > VCC -0.2V VIN > VCC -0.2V or VIN < 0.2V, f = 0(4) CE"A" < 0.2V andCE"B" > VCC -0.2V(6) VIN > VCC - 0.2V or VIN < 0.2V Active Port Outputs Disabled f = fMAX(3) 7132X25(7) 7142X25(7) Com'l, Ind & Military 7132X35 7142X35 Com'l & Military Typ. Max. Typ. Max. Typ. Max. Unit mA COM'L SA LA 110 110 250 200 110 110 220 170 80 80 165 120 MIL & IND SA LA ____ ____ ____ ____ 110 110 280 220 80 80 230 170 COM'L SA LA 30 30 65 45 30 30 65 45 25 25 65 45 MIL & IND SA LA ____ ____ ____ ____ 30 30 80 60 25 25 80 60 COM'L SA LA 65 65 165 125 65 65 150 115 50 50 125 90 MIL & IND SA LA ____ ____ ____ ____ 65 65 160 125 50 50 150 115 COM'L SA LA 1.0 0.2 15 5 1.0 0.2 15 5 1.0 0.2 15 4 MIL & IND SA LA ____ ____ ____ ____ 1.0 0.2 30 10 1.0 0.2 30 10 COM'L SA LA 60 60 155 115 60 60 145 105 45 45 110 85 MIL & IND SA LA ____ ____ ____ ____ 60 60 155 115 45 45 145 105 mA mA mA mA 2692 tbl 04a 7132X55 7142X55 Com'l & Military Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Test Condition Version 7132X100 7142X100 Com'l & Military Typ. Max. Typ. Max. Unit Dynamic Operating Current (Both Ports Active) CEL = CER = VIL, Outputs Disabled f = fMAX(3) COM'L SA LA 65 65 155 110 65 65 155 110 mA MIL & IND SA LA 65 65 190 140 65 65 190 140 Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH, f = fMAX(3) COM'L SA LA 20 20 65 35 20 20 55 35 MIL & IND SA LA 20 20 65 45 20 20 65 45 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(6) Active Port Outputs Disabled f=fMAX(3) COM'L SA LA 40 40 110 75 40 40 110 75 MIL & IND SA LA 40 40 125 90 40 40 125 90 Full Standby Current (Both Ports - All CMOS Level Inputs) CEL and CER > VCC -0.2V VIN > VCC -0.2V or VIN < 0.2V, f = 0(4) COM'L SA LA 1.0 0.2 15 4 1.0 0.2 15 4 MIL & IND SA LA 1.0 0.2 30 10 1.0 0.2 30 10 Full Standby Current (One Port - All CMOS Level Inputs) CE"A" < 0.2V and CE"B" > VCC -0.2V(6) VIN > VCC - 0.2V or VIN < 0.2V Active Port Outputs Disabled f = fMAX(3) COM'L SA LA 40 40 100 70 40 40 95 70 MIL & IND SA LA 40 40 110 85 40 40 110 80 mA mA mA mA 2692 tbl 04b NOTES: 1. 'X' in part numbers indicates power rating (SA or LA). 2. PLCC Package only 3. At f = fMax, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC, and using “AC TEST CONDITIONS” of input levels of GND to 3V. 4. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby. 5. Vcc = 5V, TA=+25°C for Typ and is not production tested. Vcc DC = 100mA (Typ) 6. Port "A" may be either left or right port. Port "B" is opposite from port "A". 7. Not available in DIP packages. 8. Industrial temperature: for specific speeds, packages and powers contact your sales office. 4 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature Supply Voltage Range (VCC = 5.0V ± 10%) 7132SA 7142SA Symbol Parameter Test Conditions (1) 7132LA 7142LA Min. Max. Min. Max. Unit µA |ILI| Input Leakage Current VCC = 5.5V, VIN = 0V to VCC ___ 10 ___ 5 |ILO| Output Leakage Current VCC = 5.5V, CE = VIH, VOUT = 0V to VCC ___ 10 ___ 5 VOL Output Low Voltage IOL = 4mA ___ 0.4 ___ 0.4 VOL Open Drain Output Low Voltage (BUSY) IOL = 16mA ___ 0.5 ___ 0.5 VOH Output High Voltage IOH = -4mA 2.4 ___ 2.4 ___ µA V V V 2692 tbl 05 NOTE: 1. At Vcc < 2.0V leakages are undefined. Data Retention Characteristics (LA Version Only) Symbol Parameter Test Condition Min. Typ.(1) Max. Unit 2.0 ___ ___ V VDR VCC for Data Retention VCC = 2.0V ICCDR Data Retention Current CE > VCC -0.2V Mil. & Ind. ___ 100 4000 µA VIN > VCC -0.2V or Com'l. ___ 100 1500 µA 0 ___ ___ ns tRC(2) ___ ___ ns tCDR(3) Chip Deselect to Data Retention Time tR(3) Operation Recovery Time VIN < 0.2V 2692 tbl 06 NOTES: 1. VCC = 2V, TA = +25°C, and is not production tested. 2. tRC = Read Cycle Time 3. This parameter is guaranteed but not production tested. Data Retention Waveform DATA RETENTION MODE VCC 4.5V VDR ≥ 2.0V tCDR 4.5V tR VDR CE VIH VIH , 2692 drw 05 5 6.42 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 3ns Max. Input Timing Reference Levels 1.5V Output Reference Levels 1.5V Output Load Figures 1, 2, and 3 2692 tbl 07 5V 5V 1250Ω 1250Ω DATAOUT DATAOUT 775Ω 30pF* 775Ω 5pF* *100pF for 55 and 100ns versions Figure 1. AC Output Test Load Figure 2. Output Test Load (for t HZ, tLZ , tWZ, and tOW) * Including scope and jig 5V 270Ω BUSY 30pF* *100pF for 55 and 100ns versions 2692 drw 06 Figure 3. BUSY AC Output Test Load 6 , IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(3,5) 7132X20(2) 7142X20(2) Com'l Only Symbol Parameter 7132X25(2) 7142X25(2) Com'l, Ind & Military 7132X35 7142X35 Com'l & Military Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 20 ____ 25 ____ 35 ____ ns tAA Address Access Time ____ 20 ____ 25 ____ 35 ns tACE Chip Enable Access Time ____ 20 ____ 25 ____ 35 ns tAOE Output Enable Access Time ____ 11 ____ 12 ____ 20 ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ ns (1,4) 0 ____ 0 ____ 0 ____ ns (1,4) ____ 10 ____ 10 ____ 15 ns 0 ____ 0 ____ 0 ____ ns ____ 20 ____ 25 ____ 35 ns tLZ tHZ tPU tPD Output Low-Z Time Output High-Z Time Chip Enable to Power Up Time (4) Chip Disable to Power Down Time (4) 2692 tbl 08a 7132X55 7142X55 Com'l & Military Symbol Parameter 7132X100 7142X100 Com'l & Military Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 55 ____ 100 ____ ns tAA Address Access Time ____ 55 ____ 100 ns tACE Chip Enable Access Time ____ 55 ____ 100 ns tAOE Output Enable Access Time ____ 25 ____ 40 ns tOH Output Hold from Address Change 3 ____ 10 ____ ns tLZ Output Low-Z Time (1,4) 5 ____ 5 ____ ns tHZ (1,4) ____ 25 ____ 40 ns 0 ____ 0 ____ ns ____ 50 ____ 50 ns Output High-Z Time (4) tPU Chip Enable to Power Up Time tPD Chip Disable to Power Down Time(4) NOTES: 1. Transition is measured 0mV from Low or High-Impedance Voltage Output Test Load (Figure 2). 2. PLCC package only. 3. 'X' in part numbers indicates power rating (SA or LA). 4. This parameter is guaranteed by device characterization, but is not production tested. 5. Industrial temperature: for specific speeds, packages and powers contact your sales office. 7 6.42 2692 tbl 08b IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle No. 1, Either Side(1) tRC ADDRESS tAA tOH tOH DATAOUT PREVIOUS DATA VALID DATA VALID BUSYOUT 2692 drw 07 tBDDH(2,3) Timing Waveform of Read Cycle No. 2, Either Side(1) tACE CE tAOE(3) tHZ(5) OE tHZ(5) tLZ(4) VALID DATA DATAOUT (4) tLZ ICC CURRENT ISS tPD(3) tPU 50% 50% 2692 drw 08 NOTES: 1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW. 2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations, BUSY has no relationship to valid output data. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD . 4. Timing depends on which signal is asserted last, OE or CE. 5. Timing depends on which signal is de-asserted first, OE or CE. 8 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Supply Voltage Range(5,6) 7132X20(2) 7142X20(2) Com'l Only Symbol Parameter 7132X25(2) 7142X25(2) Com'l, Ind & Military 7132X35 7142X35 Com'l & Military Min. Max. Min. Max. Min. Max. Unit WRITE CYCLE tWC Write Cycle Time (3) 20 ____ 25 ____ 35 ____ ns tEW Chip Enable to End-of-Write 15 ____ 20 ____ 30 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ 30 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width(4) 15 ____ 15 ____ 25 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 12 ____ 15 ____ ns ____ 10 ____ 10 ____ 15 ns 0 ____ 0 ____ 0 ____ ns ____ 10 ____ 10 ____ 15 ns 0 ____ 0 ____ 0 ____ ns tHZ Output High-Z Time tDH Data Hold Time tWZ tOW (1) (1) Write Enable to Output in High-Z Output Active from End-of-Write (1) 2692 tbl 09 7132X55 7142X55 Com'l & Military Symbol Parameter 7132X100 7142X100 Com'l & Military Min. Max. Min. Max. Unit WRITE CYCLE tWC Write Cycle Time (3) 55 ____ 100 ____ ns tEW Chip Enable to End-of-Write 40 ____ 90 ____ ns tAW Address Valid to End-of-Write 40 ____ 90 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns ns (4) tWP Write Pulse Width 30 ____ 55 ____ tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 20 ____ 40 ____ ns tHZ Output High-Z Time (1) ____ 25 ____ 40 ns tDH Data Hold Time 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1) ____ 30 ____ 40 ns 0 ____ 0 ____ tOW Output Active from End-of-Write (1) ns 2692 tbl 10 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization but is not production tested. 2. PLCC package only. 3. For Master/Slave combination, tWC = tBAA + tWP , since R/W = VIL must occur after tBAA . 4. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW ) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP . 5. 'X' in part numbers indicates power rating (SA or LA). 6. Industrial temperature: for specific speeds, packages and powers contact your sales office. 9 6.42 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)(1,5,8) tWC ADDRESS tHZ(7) OE tAW CE tAS(6) tWR(3) tWP(2) tHZ(7) R/W tWZ(7) tOW (4) DATA OUT (4) tDW tDH DATA IN 2692 drw 09 Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)(1,5) tWC ADDRESS tAW CE tAS(6) tEW(2) tWR(3) R/W tDW tDH DATA IN 2692 drw 10 NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or t WP) of CE = VIL and R/W = VIL. 3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle. 4. During this period, the l/O pins are in the output state and input signals must not be applied. 5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal (CE or R/W) is asserted last. 7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 2). 8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW . If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 10 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(7,8) 7132X20(1) 7142X20(1) Com'l Only Symbol Parameter 7132X25(2) 7142X25(2) Com'l, Ind & Military 7132X35 7142X35 Com'l & Military Min. Max. Min. Max. Min. Max. Unit BUSY Timing (For Master IDT7132 Only) tBAA BUSY Access Time from Address ____ 20 ____ 20 ____ 20 ns tBDA BUSY Disable Time from Address ____ 20 ____ 20 ____ 20 ns BUSY Access Time from Chip Enable ____ 20 ____ 20 ____ 20 ns tBDC BUSY Disable Time from Chip Enable ____ 20 ____ 20 ____ 20 ns tWDD Write Pulse to Data Delay (2) ____ 50 ____ 50 ____ 60 ns 12 ____ 15 ____ 20 ____ ns ____ 35 ____ 35 ____ 35 ns 5 ____ 5 ____ 5 ____ ns ____ 25 ____ 35 ____ 35 ns 0 ____ 0 ____ 0 ____ ns ns ns tBAC tWH Write Hold After BUSY (6) tDDD Write Data Valid to Read Data Delay tAPS Arbitration Priority Set-up Time (3) tBDD BUSY Disable to Valid Data (2) (4) BUSY Timing (For Slave IDT7142 Only) Write to BUSY Input(5) tWB (6) tWH Write Hold After BUSY 12 ____ 15 ____ 20 ____ tWDD Write Pulse to Data Delay (2) ____ 40 ____ 50 ____ 60 tDDD Write Data Valid to Read Data Delay (2) ____ 30 ____ 35 ____ 35 ns 2692 tbl 11a 7132X55 7142X55 Com'l & Military Symbol Parameter 7132X100 7142X100 Com'l & Military Min. Max. Min. Max. Unit BUSY Access Time from Address ____ 30 ____ 50 ns BUSY Disable Time from Address ____ 30 ____ 50 ns BUSY Access Time from Chip Enable ____ 30 ____ 50 ns BUSY Disable Time from Chip Enable ____ 30 ____ 50 ns ____ 80 ____ 120 ns ns BUSY Timing (For Master IDT7132 Only) tBAA tBDA tBAC tBDC tWDD Write Pulse to Data Delay (2) (6) tWH Write Hold After BUSY 20 ____ 20 ____ tDDD Write Data Valid to Read Data Delay (2) ____ 55 ____ 100 ns tAPS Arbitration Priority Set-up Time (3) 5 ____ 5 ____ ns ____ 50 ____ 65 ns tBDD BUSY Disable to Valid Data (4) BUSY Timing (For Slave IDT7142 Only) tWB Write to BUSY Input(5) 0 ____ 0 ____ ns tWH Write Hold After BUSY(6) 20 ____ 20 ____ ns ____ 80 ____ 120 ns ____ 55 ____ 100 tWDD tDDD Write Pulse to Data Delay (2) Write Data Valid to Read Data Delay (2) NOTES: 1. PLCC package only. 2. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port -to-Port Read and BUSY.” 3. To ensure that the earlier of the two ports wins. 4. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – t DW (actual). 5. To ensure that a write cycle is inhibited on port "B" during contention on port "A". 6. To ensure that a write cycle is completed on port "B" after contention on port "A". 7. 'X' in part numbers indicates power rating (SA or LA). 8. Industrial temperature: for specific speeds, packages and powers contact your sales office. 11 6.42 ns 2692 tbl 11b IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Timing Waveform of Write with Port-to-Port Read and BUSY(2,3,4) tWC ADDR"A" MATCH tWP R/W"A" tDW DATAIN"A" tDH VALID (1) tAPS MATCH ADDR"B" tBDD t BDA tBAA BUSY"B" tWDD DATAOUT"B" VALID tDDD 2692 drw 11 NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for Slave (IDT7142). 2. CEL = CER = VIL 3. OE = VIL for the reading port. 4. All timing is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is opposite from port "A". Timing Waveform of Write with BUSY(4) tWP R/W"A" tWB(3) BUSY"B" tWH(1) R/W"B" (2) 2692 drw 12 NOTES: 1. tWH must be met for both BUSY Input (IDT7142, slave) or Output (IDT7132, master). 2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH. 3. tWB applies only to the slave version (IDT7142). 4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A". 12 , IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Timing Waveform of BUSY Arbitration Controlled by CE Timing(1) ADDR "A" ADDRESSES MATCH and "B" CE"B" tAPS(2) CE"A" tBAC tBDC BUSY"A" 2692 drw 13 Timing Waveform of BUSY Arbitration Controlled by Address Match Timing(1) tRC or tWC ADDR"A" ADDRESSES MATCH ADDRESSES DO NOT MATCH (2) tAPS ADDR"B" tBAA tBDA BUSY"B" 2692 drw 14 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted (7132 only). Truth Tables Table I. Non-Contention Read/Write Control(4) Left or Right Port(1) R/W CE OE D0-7 Function X H X Z Port Disabled and in Power-Down Mode, ISB2 or ISB4 X H X Z CER = CEL = VIH, Power-Down Mode, ISB1 or ISB3 L L X DATAIN H L L DATAOUT X L H Z Data on Port Written into Memory (2) Data in Memory Output on Port(3) High Impedance Outputs 2692 tbl 12 NOTES: 1. A0L - A10L ≠ A 0R - A10R 2. If BUSY = L, data is not written. 3. If BUSY = L, data may not be valid, see tWDD and tDDD timing. 4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE 13 6.42 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Table II — Address BUSY Arbitration Outputs CEL CER AOL-A10L AOR-A10R BUSYL(1) BUSYR(1) X X NO MATCH H H Normal H X MATCH H H Normal X H MATCH H H Normal L L MATCH (2) (2) Write Inhibit(3) Function 2692 tbl 13 NOTES: 1. Pins BUSYL and BUSYR are both outputs for IDT7132 (master). Both are inputs for IDT7142 (slave). BUSYX outputs on the IDT7132 are open drain, not push-pull outputs. On slaves the BUSYX input internally inhibits writes. 2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs of this port. 'H' if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. Width Expansion with Busy Logic Master/Slave Arrays When expanding an SRAM array in width while using BUSY logic, one master part is used to decide which side of the SRAM array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the BUSY signal as a write inhibit signal. Thus on the IDT7132/ IDT7142 SRAMs the BUSY pin is an output if the part is Master (IDT7132), and the BUSY pin is an input if the part is a Slave (IDT7142) as shown in Figure 3. 5V 270Ω MASTER Dual Port SRAM BUSYL Functional Description The IDT7132/IDT7142 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT7132/IDT7142 has an automatic power down feature controlled by CE. The CE controls onchip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = VIH). When a port is enabled, access to the entire memory array is permitted. Busy Logic Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a busy indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY Logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. MASTER Dual Port SRAM BUSYL BUSYL CE BUSYR CE BUSYR SLAVE Dual Port SRAM BUSYL SLAVE Dual Port SRAM BUSYL CE BUSYR DECODER Inputs The BUSY outputs on the IDT7132 RAM master are totem-pole type outputs and do not require pull-up resistors to operate. If these RAMs are being expanded in depth, then the BUSY indication for the resulting array does not require the use of an external AND gate. 5V 270Ω CE BUSYR BUSYR 2692 drw 15 Figure 4. Busy and chip enable routing for both width and depth expansion with IDT7132 (Master) and (Slave) IDT7142 SRAMs. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The BUSY arbitration, on a Master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with either the R/W signal or the byte enables. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. 14 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Ordering Information IDT A XXXX 999 A Device Type Power Speed Package A Process/ Temperature Range BLANK Commercial (0°C to +70°C) Industrial (-40°C to +85°C) I(1) Military (-55°C to +125°C) B Compliant to MIL-PRF-38535 QML P C J L48 F 48-pin Plastic DIP (P48-1) 48-pin Sidebraze DIP (C48-2) 52-pin PLCC (J52-1) 48-pin LCC (L48-1) 48-pin Ceramic Flatpack (F48-1) 20 25 35 55 100 Commercial PLCC Only Commercial, Industrial & Military Commercial & Military Commercial & Military Commercial & Military LA SA Low Power Standard Power 7132 7142 16K (2K x 8-Bit) MASTER Dual-Port RAM 16K (2K x 8-Bit) SLAVE Dual-Port RAM Speed in nanoseconds NOTE: 1. Industrial temperature range is available. For specific speeds, packages and powers contact your sales office. 2692 drw 16 Datasheet Document History 03/24/99: 06/08/99: 08/26/99: 11/10/99: 01/12/00: , Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Pages 2 and 3 Added additional notes to pin configurations Changed drawing format Page 14 Changed Busy Logic and Width Expansion copy Replaced IDT logo Pages 1 and 2 Moved full "Description" to page 2 and adjusted page layouts Page 1 Added "(LAonly)" to paragraph Page 2 Fixed P48-1 body package description Page 3 Increased storage temperature parameters Clarified TA parameter Page 4 DC Electrical parameters–changed wording from "open" to "disabled" Page 6 Added asteriks to Figures 1 and 3 in drw 06 Page 14 Corrected part numbers Changed ±500mV to 0mV in notes Datasheet Document History continued on page 16 15 6.42 IDT7132SA/LA and IDT 7142SA/LA High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges Datasheet Document History (cont'd) 06/11/04: Page 6 Corrected errors in Figure 3 by changing 1250Ω to 270Ω and removing "or Int" and Int Page 4, 7, 9, 11 & 15 Clarified Industrial temp offering for 25ns Page 5 Removed INT from VOL parameter in DC Electrical Characteristics table Page 6 Updated AC Test Conditions Input Rise/Fall Times from 5ns to 3ns CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-5166 fax: 408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 16 for Tech Support: 831-754-4613 [email protected]