Chenmko CHT84SPT Dual p-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT84SPT
SURFACE MOUNT
Dual P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 50 Volts
CURRENT 0.13 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-88/SOT-363
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
*
*
*
*
Rugged and reliable.
High saturation current capability.
Voltage controlled small signal switch.
Internal isolated two P-Channel FET in one package.
(1)
0.65
1.2~1.4
2.0~2.2
0.65
(3)
(4)
0.15~0.35
CONSTRUCTION
(6)
1.15~1.35
* P-Channel Enhancement
MARKING
0.8~1.1
0.08~0.15
* VS
0~0.1
0.1 Min.
CIRCUIT
6
4
1
3
Absolute Maximum Ratings
2.15~2.45
Dimensions in millimeters
SC-88/SOT-363
TA = 25°C unless otherwise noted
CHT84SPT
Symbol
Parameter
Units
VDSS
Drain-Source Voltage
-50
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Maximum Drain Current - Continuous
-0.13
A
PD
Maximum Power Dissipation
300
mW
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
417
°C/W
2004-03
RATING CHARACTERISTIC CURVES ( CHT84SPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
-50
-75
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -50 V, VGS = 0 V
-15
V
µA
VDS = -25 V, VGS = 0 V
-100
nA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
10
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-10
nA
-1.6
-2.0
V
6
10
Ω
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A
gFS
Forward Transconductance
VDS = VGS, ID = 1.0 mA
VDS = -25 V , ID = 100 m A
-0.8
0.05
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
toff
Turn-Off Time
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
45
pF
25
12
VDD = -30 V
ID = -270 mA, VGS = -10 V,
RGEN = 50 Ω
10
18
nS
RATING CHARACTERISTIC CURVES ( CHT84SPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Temperature
15
500
R DS(ON) , NORMALIZED
VGS = 5V
400
4.5V
300
3.5V
200
3.0V
100
2.5V
0
0
1
2
3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
5
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
600
12
V GS =-10V
9.0
I D = -130m A
6.0
3.0
0
-5 0
-2 5
0
25
50
75
100
T J , JUNCTION T EMPERATURE (°C)
125
150
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