CHENMKO ENTERPRISE CO.,LTD CHT84SPT SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts CURRENT 0.13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE * Small surface mounting type. (SC-88/SOT-363) * High density cell design for low RDS(ON). * Suitable for high packing density. * * * * Rugged and reliable. High saturation current capability. Voltage controlled small signal switch. Internal isolated two P-Channel FET in one package. (1) 0.65 1.2~1.4 2.0~2.2 0.65 (3) (4) 0.15~0.35 CONSTRUCTION (6) 1.15~1.35 * P-Channel Enhancement MARKING 0.8~1.1 0.08~0.15 * VS 0~0.1 0.1 Min. CIRCUIT 6 4 1 3 Absolute Maximum Ratings 2.15~2.45 Dimensions in millimeters SC-88/SOT-363 TA = 25°C unless otherwise noted CHT84SPT Symbol Parameter Units VDSS Drain-Source Voltage -50 V VGSS Gate-Source Voltage - Continuous ±20 V ID Maximum Drain Current - Continuous -0.13 A PD Maximum Power Dissipation 300 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 417 °C/W 2004-03 RATING CHARACTERISTIC CURVES ( CHT84SPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ -50 -75 Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V -15 V µA VDS = -25 V, VGS = 0 V -100 nA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -10 nA -1.6 -2.0 V 6 10 Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = -5.0 V, ID = 0.1 A gFS Forward Transconductance VDS = VGS, ID = 1.0 mA VDS = -25 V , ID = 100 m A -0.8 0.05 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = -25 V, VGS = 0 V, f = 1.0 MHz 45 pF 25 12 VDD = -30 V ID = -270 mA, VGS = -10 V, RGEN = 50 Ω 10 18 nS RATING CHARACTERISTIC CURVES ( CHT84SPT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Temperature 15 500 R DS(ON) , NORMALIZED VGS = 5V 400 4.5V 300 3.5V 200 3.0V 100 2.5V 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 600 12 V GS =-10V 9.0 I D = -130m A 6.0 3.0 0 -5 0 -2 5 0 25 50 75 100 T J , JUNCTION T EMPERATURE (°C) 125 150