DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Max Package -20V 0.9 @ VGS = -4.5V 2.0 @ VGS = -1.8V SOT23 ID TA = +25°C -430mA -150mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Qualified to AEC-Q101 standards for High Reliability Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Applications DC-DC Converters Power Management Functions Case: SOT23 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D SOT23 D G S G ESD PROTECTED Gate Protection Diode Top View Internal Schematic Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP2004K-7 DMP2004KQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMP2004K Document number: DS30933 Rev. 10 - 2 Mar 3 PAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) YM PAB ~ ~ Apr 4 2018 F May 5 Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D February 2018 © Diodes Incorporated DMP2004K Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) VGS = -4.5V ID -600 mA Pulsed Drain Current IDM -1.9 A Symbol Value Unit Thermal Characteristics Characteristic Total Power Dissipation (Note 5) PD 550 mW RθJA 227 °C/W TJ, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±1.0 µA VGS = ±4.5V, VDS = 0V VGS(TH) -0.5 — -1.0 V VDS = VGS, ID = -250µA — 0.7 0.9 — 1.1 1.4 — 1,7 2.0 |Yfs| 200 — — ms VDS = -10V, ID = -0.2A VSD -0.5 — -1.2 V VGS = 0V, IS = -115mA Input Capacitance Ciss — — 175 pF Output Capacitance Coss — — 30 pF Reverse Transfer Capacitance Crss — — 20 pF Turn-On Delay Time tD(ON) — 8.5 — ns Turn-On Rise Time tR — 4.3 — ns Turn-Off Delay Time tD(OFF) — 20.2 — ns tF — 19.2 — ns Drain-Source Breakdown Voltage Test Condition ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) RDS(ON) VGS = -4.5V, ID = -430mA Ω VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: VDS = -16V, VGS = 0V f = 1.0MHz VDD = -3V, VGS = -2.5V, RL = 300Ω, Rg = 25Ω, ID = -100mA 5. Device mounted on FR-4 PCB. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMP2004K Document number: DS30933 Rev. 10 - 2 2 of 6 www.diodes.com February 2018 © Diodes Incorporated DMP2004K -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS=-5V 0 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics -VGS(TH), GATE THRESHOLD VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics )V ( E G A T L O V D L O H S E R H T E T A G , )h (tS G V - TA , AMBIENT TEMPERATURE (°C) Figure 3 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Figure 4 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Figure 5 Static Drain-Source On-Resistance vs. Drain Current DMP2004K Document number: DS30933 Rev. 10 - 2 -ID, DRAIN-SOURCE CURRENT (A) Figure 6 Static Drain-Source On-Resistance vs. Drain-Source Current 3 of 6 www.diodes.com February 2018 © Diodes Incorporated DMP2004K -VDS, SOURCE-DRAIN VOLTAGE (V) Figure 8 Reverse Drain Current vs. Source-Drain Voltage (ms) (°C) TA, AMBIENT TEMPERATURE (癈 ) Figure 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 150 120 90 60 30 0 -ID , DRAIN CURRENT (A) Figure 9 Forward Transfer Admittance vs. Drain Current DMP2004K Document number: DS30933 Rev. 10 - 2 4 of 6 www.diodes.com -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Capacitance February 2018 © Diodes Incorporated DMP2004K Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm a M A L C L1 B D G F Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMP2004K Document number: DS30933 Rev. 10 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com February 2018 © Diodes Incorporated DMP2004K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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