MJ15020 − NPN MJ15021 − PNP Preferred Devices Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features • • • • http://onsemi.com 4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 200 − 250 VOLTS, 150 WATTS High Gain Complementary Silicon Power Transistors Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec Excellent Frequency Response −fT = 20 MHz min Pb−Free Packages are Available* MAXIMUM RATINGS Symbol MJ15020 MJ15021 Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 4.0 Adc Base Current − Continuous IB 2.0 Adc Emitter Current − Continuous IE 6.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 0.86 W W/_C TJ, Tstg −65 to +200 _C Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 _C/W Rating Operating and Storage Junction Temperature Range TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ1502xG AYWW MEX THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MJ1502x = Device Code x = 0 or 1 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping MJ15020 TO−204 100 Units / Tray TO−204 (Pb−Free) 100 Units / Tray TO−204 100 Units / Tray TO−204 (Pb−Free) 100 Units / Tray MJ15020G MJ15021 MJ15021G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJ15020/D MJ15020 − NPN MJ15021 − PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 250 − ICEO − 500 mAdc IEBO − 500 mAdc 3.0 − 30 10 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) MJ15020, MJ15021 Collector Cutoff Current (VCE = 200 Vdc, IB = 0) MJ15020, MJ15021 VCEO(sus) Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) Vdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward−Biased (VCE = 50 Vdc, t = 0.5 s (non−repetitive) IS/b Adc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 V) (IC = 3.0 Adc, VCE = 4.0 V) hFE − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 1.0 Vdc Base−Emitter on Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc fT 20 − MHz Cob − 500 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 25 50 125 100 150 75 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 175 200 MJ15020 − NPN MJ15021 − PNP TYPICAL DYNAMIC CHARACTERISTICS hFE, DC CURRENT GAIN 200 100 70 50 NPN 30 20 PNP 10 7.0 5.0 3.0 2.0 0.1 TJ = 25°C VCE = 4.0 Vdc 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 TC = 25°C WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJ15020/21 0.01 5.0 7.0 10 20 30 200 300 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 3 500 MJ15020 − NPN MJ15021 − PNP PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C E D −T− U SEATING PLANE K 2 PL 0.13 (0.005) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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