INCHANGE Semiconductor Product Specification MBR3060WT Schottky Barrier Rectifier FEATURES ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: TO-3P package ·Mounting position: Any ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 60 V VRMS Maximum RMS Voltage 42 V VDC Maximum DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 15 30 A 300 A Junction Temperature -65~150 ℃ Storage Temperature Range -65~150 ℃ IFSM TJ Tstg Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Product Specification MBR3060WT Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 40 ℃/W MAX UNIT IF= 15A 0.75 V Rated DC Voltage, TC= 25℃ 5.0 50 mA ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤1%) SYMBOL PARAMETER VF Maximum Instantaneous Forward Voltage IR Maximum Instantaneous Reverse Current isc website：www.iscsemi.com CONDITIONS Rated DC Voltage, TC= 100℃ 2 isc & iscsemi is registered trademark