CYStech Electronics Corp. Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB30P06KQ8 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-6A RDSON@VGS=-4.5V, ID=-4A RDSON@VGS=-4V, ID=-3A -60V -7A 23.5mΩ(typ) 37.5mΩ(typ) 44.3mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package Equivalent Circuit Outline MTB30P06KQ8 SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTB30P06KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB30P06KQ8 CYStek Product Specification Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=5mH, IAS=-7A, VDD=-15V TA=25 °C Power Dissipation (Note 2) TA=70 °C Operating Junction and Storage Temperature Range BVDSS VGS -60 ±20 -7 -5.6 -28 -7 122.5 3.1 2 -55~+150 ID IDM IAS EAS PD Tj ; Tstg Unit V A mJ W °C Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Thermal Resistance Ratings Thermal Resistance Junction-to-Case Junction-to-Ambient (Note) Symbol RθJC RθJA Maximum 5 40 Unit °C / W Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Static BVDSS -60 V VGS(th) -1.2 -2.5 IGSS ±10 -1 μA IDSS -25 23.5 30.5 37.5 48.8 RDS(ON) (Note 1) mΩ 44.3 58.0 GFS 14 S (Note 1) Dynamic Ciss 1453 pF Coss 218 Crss 120 td(ON) (Note 1&2) 14 tr 18.8 (Note 1&2) ns td(OFF) (Note 1&2) 68.2 tf 66.2 (Note 1&2) MTB30P06KQ8 Test Conditions VGS=0V, ID=-250μA VDS=-10V, ID=-1mA VGS=±16V, VDS=0V VDS=-60V, VGS=0V VDS=-48V, VGS=0V, Tj=85°C ID=-6A, VGS=-10V ID=-4A, VGS=-4.5V ID=-3A, VGS=-4V VDS=-5V, ID=-6A VDS=-20V, VGS=0V, f=1MHz VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω CYStek Product Specification CYStech Electronics Corp. Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Qg (Note 1&2) Qgs (Note 1&2) Qgd (Note 1&2) Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr Min. - Typ. 28.6 5.8 8.4 Max. - - -0.77 14.5 8 -4 -16 -1.2 - Unit nC Test Conditions VDS=-48V, ID=-7A, VGS=-10V A V ns nC IS=-4A, VGS=0V IF=-4A, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Recommended Soldering Footprint MTB30P06KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 4/9 Typical Characteristics Normalized Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 28 -I D, Drain Current (A) 24 20 -BVDSS, Normalized Drain-Source Breakdown Voltage -10V, -9V,-8V,-7V,-6V,-5V -4.5V 16 12 -4V 8 -3.5V Tj=25°C 4 VGS=-3V 2 4 6 8 -VDS, Drain-Source Voltage(V) 1.0 0.8 ID=-250μA, VGS=0V 0.6 0 0 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 Static Drain-Source On-State resistance vs Drain Current Source Drain Current vs Source-Drain Voltage 1000 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=-3.5V 100 VGS=-4.5V -VSD, Source-Drain Voltage(V) VGS=0V VGS=-4V 1.0 0.8 0.6 Tj=150°C 0.4 VGS=-10V 0.2 10 0.1 1 -ID, Drain Current(A) 0 10 4 8 12 16 -IS, Source Drain Current(A) 20 Normalized Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 2.2 R DS(on) , Normalized Static DrainSource On-State Resistance R DS(on) , Static Drain-Source OnState Resistance(mΩ) Tj=25°C 450 ID=-6A 400 350 300 250 200 150 100 2.0 1.6 1.4 1.2 1.0 0.8 0.6 50 0.4 0 0.2 0 MTB30P06KQ8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 VGS=-10V, ID=-6A 1.8 RDS(ON) @Tj=25°C : 23.6mΩ typ. -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 5/9 Typical Characteristics(Cont.) Normalized Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.6 -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=-1mA 1.0 0.8 0.6 ID=-250μA 0.4 0.2 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 100 10 1 VDS=-5V Pulsed TA=25°C 0.1 8 VDS=-15V 6 4 VDS=-48V 2 ID=-7A 0.01 0.001 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 4 8 12 16 20 24 Qg, Total Gate Charge(nC) 28 32 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 9.0 -I D, Maximum Drain Current(A) 100 100μs -I D, Drain Current(A) VDS=-30V 10 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC 8.0 7.0 6.0 5.0 4.0 3.0 2.0 TA=25°C, VGS=-10V, RθJA=40°C/W 1.0 0.0 0.01 0.1 MTB30P06KQ8 1 10 100 -VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 300 28 TJ(MAX) =150°C TA=25°C θJA=40°C/W VDS=-10V 24 -I D, Drain Current(A) 250 Power (W) Typical Transfer Characteristics 200 150 100 50 20 16 12 8 4 0 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 0 2 4 -VGS, Gate-Source Voltage(V) 6 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 10 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) MTB30P06KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB30P06KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB30P06KQ8 CYStek Product Specification Spec. No. : C104Q8 Issued Date : 2015.07.27 Revised Date : 2015.07.28 Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code B30P 06K □□□□ 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 *: Typical Inches Min. Max. 0.1850 0.2007 0.1496 0.1575 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 DIM A B C D E F Millimeters Min. Max. 4.70 5.10 3.80 4.00 5.80 6.20 1.27 * 0.33 0.51 3.74 3.88 DIM G H I J K L Inches Min. Max. 0.0531 0.0689 0.1889 0.2007 0.0019 0.0098 0.0157 0.0500 0.0067 0.0098 0.0531 0.0610 Millimeters Min. Max. 1.35 1.75 4.80 5.10 0.05 0.25 0.40 1.27 0.17 0.25 1.35 1.55 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB30P06KQ8 CYStek Product Specification