Transistors SMD Type PNP Silicon Planar Medium Power High Gain Transistor FZT788B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low equivalent on-resistance; RCE(sat) 93mÙ at 3A. +0.1 3.00-0.1 Gain of 300 at IC=2 Amps and Very low saturation voltage. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V ICM -8 A Peak pulse current IC -3 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Continuous collector current Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT788B Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -15 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -15 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector-base cut-off current ICBO VCB=-10V -0.1 ìA Emitter Cut-Off Current IEBO VEB=-4V -0.1 ìA IC=-0.5A, IB=-2.5mA IC=-1A, IB=-5mA IC=-2A, IB=-10mA IC=-3A, IB=-50mA -0.15 -0.25 -0.45 -0.5 V -0.9 V Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=-1A, IB=-5mA Base-emitter ON voltage * VBE(on) IC=-1A, VCE=-2V Static Forward Current Transfer Ratio Transitional frequency hFE fT -0.75 IC=-10mA,VCE=-2V * 500 IC=-1A, VCE=-2V* 400 IC=-2A, VCE=-2V* 300 IC=-6A, VCE=-2V* 150 IC=-50mA, VCE=-5V, f=50MHz 100 V 1500 MHz Input capacitance Cibo VEB=-0.5V, f=1MHz 225 pF Output capacitance Cobo VCB=-10V, f=1MHz 25 pF Turn-on time t(on) IC=-500mA, VCC=-10V 35 ns t(off) IB1=IB2=-50mA 400 ns Turn-off time * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT788B www.kexin.com.cn