MOTOROLA MMBR521LT1 High-frequency transistor pnp silicon Datasheet

 Order this document
by MMBR521LT1/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for use in the high–gain, low–noise small–signal
amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
switching times.
• High Current Gain–Bandwidth Product —
fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1)
fT = 4.2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1)
• Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 2.5 dB (Typ) (MMBR521LT1)
NF(matched) = 2.8 dB (Typ) (MRF5211LT1)
• High Power Gain — Gpe (matched) = 11 dB (Typ)
IC = – 70 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
• Guaranteed RF Parameters
• Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1)
Offer Improved RF Performance
Lower Package Parasitics
Higher Gain
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Ratings
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C,
Derate linearly above TC = 75°C @
Symbol
Value
Unit
VCEO
VCBO
–10
Vdc
– 20
Vdc
VEBO
PD(max)
All
– 2.5
Vdc
0.333
4.44
W
mW/°C
Collector Current — Continuous
IC
– 70
mA
Maximum Junction Temperature
TJmax
Tstg
150
°C
– 55 to +150
°C
Symbol
Value
Unit
RθJC
225
°C/W
Storage Temperature
All
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
MMBR521LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5211LT1
THERMAL CHARACTERISTICS
Ratings
Thermal Resistance, Junction to Case
(MMBR521LT1, MRF5211LT1)
DEVICE MARKING
MMBR521LT1 = 7M
MRF5211LT1 = 04
NOTE:
1. Case Temperature is measured on the collector lead closest to the package. For case
temperatures above + 75°C: PDISP(max) = (TJmax – TC) / RθJC
REV 7
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MMBR521LT1 MRF5211LT1
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–10
–12
—
Vdc
Collector–Base Breakdown Voltage (IC = – 0.1 mAdc, IE = 0)
V(BR)CBO
– 20
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = – 50 µAdc, IC = 0)
V(BR)EBO
– 2.5
—
—
Vdc
ICBO
—
—
–10
µAdc
hFE
25
—
125
—
Ccb
—
1.0
1.5
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = – 8.0 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = – 30 mAdc, VCE = – 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (VCB = – 6.0 Vdc, IE = 0, f = 1.0 MHz)
Current Gain — Bandwidth Product
(VCE = – 8.0 V, IC = – 35 mA, f = 1.0 GHz)
(VCE = – 8.0 V, IC = – 50 mA, f = 1.0 GHz)
fT
pF
GHz
MMBR521LT1
MRF5211LT1
—
—
3.4
4.2
—
—
13
8.0
10
15
10
11
—
—
—
—
—
—
1.5
2.5
2.8
2.5
3.5
3.5
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
(VCE = – 6.0 V, IC = – 5.0 mA, f = 500 MHz)
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
MMBR521LT1
MMBR521LT1
MRF5211LT1
GNFmin
Noise Figure — Minimum
(VCE = – 6.0 V, IC = – 5.0 mA, f = 500 MHz)
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
MMBR521LT1
MMBR521LT1
MRF5211LT1
dB
NFmin
dB
TYPICAL CHARACTERISTICS
C ib , INPUT CAPACITANCE (pF)
C, CAPACITANCE (pF)
3
2
Cob
1
0
0
–1
f = 1 MHz
Ccb
–2
–3
–4
–5
–6
–7
–8
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
–9
–10
Figure 1. Junction Capacitance versus Voltage
4
3
2
1
0
f = 1 MHz
0
–2
–1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
–3
Figure 2. Input Capacitance versus Voltage
VCE = – 6 Vdc
VBE
*MICROLAB
*HW–XXN
*AS APPLICABLE
D.U.T.
RF OUTPUT
RF INPUT
**SLUG TUNER
*BIAS
TEE
**SLUG TUNER
*BIAS
TEE
Figure 3. Functional Circuit Schematic
MMBR521LT1 MRF5211LT1
2
**MICROLAB/FXR
**SF — 11N < 1 GHz
**SF — 311N ≥ 1 GHz
MOTOROLA RF DEVICE DATA
20
4
VCE = 8 V
6V
3
2
1
ΓSOURCE = ΓOPT
18
16
GNF
14
4
12
VCE = – 6 V, IC = 5 mA
10
3
8
2
NFmin
N F, NOISE FIGURE (dB)
G NF , GAIN @ NOISE FIGURE (dB)
f T, CURRENT GAIN BANDWIDTH PRODUCT (GHz)
TYPICAL CHARACTERISTICS
MMBR521LT1
1
0
– 20
– 40
– 60
IC, COLLECTOR CURRENT (mA)
– 80
0.3
Figure 4. Current Gain Bandwidth Product
versus Collector Current
0.4
0.5
0.6
0.8
FREQUENCY (GHz)
1.5
1.0
Figure 5. Minimum Noise Figure & Gain @
Noise Figure versus Frequency
3.0
2.8
15
GNF
f = 500 MHz
2.6
2.4
14
VCE = – 6 V
13
2.2
12
2.0
11
1.8
10
1.6
NFmin
1.4
1.0
2.0
3.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
30
40 50
Figure 6. Minimum Noise Figure & Gain @ Noise
Figure versus Collector Current
MOTOROLA RF DEVICE DATA
12
11
GNF
10
f = 1000 MHz
4.5
4.0
9
VCE = – 6 V
8
3.5
3.0
7
2.5
NFmin
N F, NOISE FIGURE (dB)
17
16
N F, NOISE FIGURE (dB)
G NF , GAIN @ NOISE FIGURE (dB)
G NF , GAIN @ NOISE FIGURE (dB)
18
2.0
1.0
2.0
3.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
30
40 50
Figure 7. Minimum Noise Figure & Gain @ Noise
Figure versus Collector Current
MMBR521LT1 MRF5211LT1
3
f T, GAIN BANDWIDTH PRODUCT (GHz)
TYPICAL CHARACTERISTICS
MRF5211LT1
VCE = – 8 Vdc
Zo = 50 Ω
f = 1 GHz
4
3
2
1
0
0
– 40
– 20
– 60
IC, COLLECTOR CURRENT (mA)
Figure 8. Gain–Bandwidth Product versus Current
GAIN AND NOISE FIGURE versus FREQUENCY
4
VCE = – 6 Vdc
IC = – 5 mA
CKT = FIGURE 3
32
VCE = – 6 Vdc
IC = – 5 mA
Zo = 50 Ω
ΓS = ΓL = 0
3
2
NF
1
0
0.15
0.2
0.5
1
24
4
3
ΓS = Γopt
GNF
16
2
8
1
0
0.15
2
NFmin
0.2
0.5
1
NF, NOISE FIGURE (dB)
5
40
GNF , GAIN (dB)
NF, NOISE FIGURE (dB)
5
0
2
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 9. 50 Ohm Noise Figure
Figure 10. Tuned Circuit
12
GNF , GAIN (dB)
GNF
VCE = – 6 Vdc
CKT = FIGURE 3
ΓS = Γopt
15
4
10
3
NFmin
5
2
GNF , GAIN (dB)
20
NF, NOISE FIGURE (dB)
15
6
6
5
3
0
–10
– 20
– 30
– 40
– 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Tuned Circuit — Frequency 500 MHz
MMBR521LT1 MRF5211LT1
4
0
4
NFmin
1
0
VCE = – 6 Vdc
CKT = FIGURE 3
ΓS = Γopt
GNF
9
0
–10
– 20
– 30
– 40
NF, NOISE FIGURE (dB)
GAIN AND NOISE FIGURE versus CURRENT
25
3
2
– 50
IC COLLECTOR CURRENT (mA)
Figure 12. Tuned Circuit — Frequency 1.0 GHz
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS — continued
MRF5211LT1
GUmax =
GUmax, GAIN (dB)
32
40
|S21|2
(1 – |S11|2)(1 – |S22|2)
24
16
8
0
0.15
VCE = – 8 Vdc
IC = – 50 mA
Zo = 50 Ω
32
VCE = – 8 Vdc
IC = – 50 mA
Zo = 50 Ω
|S21 | 2, GAIN (dB)
40
24
16
8
0.2
0.5
1
2
0
0.15
0.2
0.5
1
2
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 13. GUmax versus Current
Figure 14. Insertion Gain versus Frequency
MOTOROLA RF DEVICE DATA
MMBR521LT1 MRF5211LT1
5
S11
S21
S12
S22
VCE
(Vdc)
IC
(mA)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
6
5
100
300
500
700
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.754
0.683
0.667
0.660
0.656
0.654
0.641
0.672
0.681
0.681
0.686
0.683
0.678
0.669
– 67
–132
–157
–171
179
175
158
140
124
110
96
84
73
64
11.453
6.106
3.954
2.890
2.294
2.086
1.442
1.108
0.917
0.793
0.716
0.674
0.653
0.653
141
105
89
78
69
65
48
36
26
18
13
9
6
3
0.040
0.065
0.071
0.078
0.085
0.091
0.130
0.188
0.261
0.343
0.426
0.503
0.568
0.620
59
39
39
44
50
53
64
69
66
60
52
43
34
24
0.818
0.549
0.472
0.452
0.449
0.451
0.480
0.466
0.483
0.493
0.500
0.502
0.503
0.507
– 24
– 37
– 40
– 44
– 49
– 52
– 66
– 79
– 94
–110
–126
–143
–160
–176
10
100
300
500
700
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.632
0.618
0.618
0.616
0.615
0.613
0.601
0.633
0.642
0.646
0.656
0.662
0.664
0.664
– 92
–149
–168
–178
173
170
155
138
124
110
98
86
75
66
16.621
7.460
4.671
3.392
2.672
2.429
1.677
1.294
1.078
0.929
0.827
0.756
0.709
0.683
131
98
85
76
68
64
48
36
25
16
10
4
1
–3
0.032
0.050
0.061
0.076
0.092
0.100
0.150
0.208
0.273
0.346
0.422
0.494
0.554
0.609
55
47
53
58
62
63
66
66
62
56
49
41
32
24
0.694
0.417
0.358
0.346
0.347
0.352
0.382
0.371
0.391
0.408
0.421
0.431
0.442
0.455
– 33
– 41
– 44
– 47
– 52
– 55
– 68
– 80
– 94
–109
–124
–141
–158
–174
50
100
300
500
700
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.547
0.606
0.616
0.616
0.616
0.615
0.606
0.643
0.654
0.662
0.672
0.680
0.682
0.679
–149
–174
177
171
165
163
150
135
122
108
96
84
74
64
21.107
7.891
4.811
3.480
2.746
2.479
1.717
1.327
1.097
0.940
0.825
0.743
0.688
0.658
115
90
80
72
65
61
46
33
22
13
6
1
–2
–5
0.017
0.037
0.058
0.080
0.102
0.113
0.169
0.229
0.292
0.359
0.427
0.493
0.551
0.601
63
68
73
73
73
72
69
65
60
54
47
39
31
22
0.441
0.260
0.239
0.242
0.248
0.255
0.293
0.289
0.315
0.337
0.356
0.373
0.391
0.409
– 43
– 42
– 44
– 48
– 54
– 57
– 71
– 82
– 96
–110
–126
–142
–159
–175
10
5
100
300
500
700
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.792
0.681
0.652
0.639
0.631
0.628
0.616
0.644
0.654
0.661
0.670
0.672
0.671
0.665
– 59
–123
–150
–166
–177
179
161
142
126
111
98
85
73
63
11.498
6.513
4.278
3.142
2.491
2.264
1.560
1.199
0.985
0.843
0.749
0.690
0.656
0.649
144
108
91
80
71
67
50
37
26
18
12
8
5
3
0.036
0.061
0.068
0.073
0.081
0.086
0.120
0.171
0.238
0.314
0.399
0.479
0.549
0.609
62
41
40
44
49
53
64
69
68
63
56
47
38
28
0.848
0.598
0.518
0.496
0.489
0.492
0.514
0.500
0.516
0.523
0.529
0.528
0.524
0.523
– 21
– 32
– 36
– 39
– 44
– 46
– 58
– 70
– 83
– 98
–113
–129
–146
–162
10
10
100
300
500
700
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.666
0.596
0.587
0.581
0.578
0.577
0.565
0.596
0.608
0.619
0.632
0.644
0.652
0.654
– 80
–141
–162
–174
177
174
158
140
126
112
99
87
75
65
17.255
8.143
5.139
3.741
2.947
2.670
1.856
1.431
1.177
1.008
0.886
0.797
0.732
0.694
135
101
87
78
70
66
50
38
26
17
9
3
–1
–4
0.030
0.047
0.059
0.072
0.086
0.095
0.139
0.191
0.253
0.319
0.393
0.465
0.532
0.589
58
48
53
58
61
63
66
66
64
59
52
44
36
28
0.738
0.465
0.404
0.388
0.387
0.389
0.413
0.402
0.420
0.434
0.444
0.453
0.457
0.465
– 28
– 37
– 38
– 41
– 45
– 48
– 60
– 70
– 82
– 96
–110
–126
–143
–159
Table 1. MMBR521LT1 Common Emitter S–Parameters
MMBR521LT1 MRF5211LT1
6
MOTOROLA RF DEVICE DATA
S11
S21
S12
S22
VCE
(Vdc)
IC
(mA)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
– 6.0
– 5.0
200
500
1000
1500
2000
0.82
0.81
0.79
0.76
0.74
– 114
– 158
175
158
143
7.9
4.0
2.0
1.3
1.0
118
88
67
50
38
0.07
0.08
0.08
0.07
0.08
35
21
21
30
47
0.59
0.40
0.37
0.43
0.47
– 46
– 54
– 68
– 82
– 95
–10
200
500
1000
1500
2000
0.78
0.79
0.77
0.74
0.71
– 137
– 168
169
155
140
10.6
4.9
2.5
1.6
1.2
109
84
66
50
39
0.05
0.06
0.06
0.08
0.10
32
28
39
49
55
0.43
0.26
0.24
0.29
0.32
– 63
– 75
– 87
– 97
– 106
– 50
200
500
1000
1500
2000
0.77
0.77
0.76
0.73
0.70
– 167
176
161
149
136
13.1
5.7
2.8
1.9
1.4
99
80
65
51
40
0.02
0.04
0.06
0.08
0.12
45
57
65
67
65
0.26
0.18
0.17
0.19
0.20
– 108
– 132
– 142
– 137
– 137
– 5.0
200
500
1000
1500
2000
0.82
0.80
0.78
0.75
0.72
– 109
– 154
175
159
143
8.1
4.2
2.2
1.4
1.0
119
90
67
50
37
0.07
0.08
0.08
0.07
0.09
36
22
22
31
43
0.62
0.42
0.38
0.43
0.46
– 43
– 52
– 65
– 78
– 89
–10
200
500
1000
1500
2000
0.77
0.77
0.76
0.73
0.70
– 132
– 167
169
155
140
11.2
5.2
2.6
1.7
1.3
110
86
67
51
39
0.05
0.06
0.06
0.07
0.10
33
29
39
49
54
0.45
0.27
0.25
0.29
0.31
– 61
– 70
– 81
– 90
– 98
– 50
200
500
1000
1500
2000
0.75
0.76
0.75
0.72
0.70
– 164
178
163
151
139
14.2
6.1
3.1
2.0
1.5
100
82
67
53
42
0.02
0.04
0.06
0.08
0.11
43
55
64
67
68
0.26
0.17
0.15
0.18
0.19
– 101
– 121
– 131
– 126
– 127
– 8.0
Table 2. MRF5211LT1 Common Emitter S–Parameters
MOTOROLA RF DEVICE DATA
MMBR521LT1 MRF5211LT1
7
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
DIM
A
B
C
D
G
H
J
K
L
S
V
2
V
G
C
H
D
J
K
CASE 318–08
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
G
3
4
S
B
1
F
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
2
D
H
J
C
R
STYLE 1:
PIN 1.
2.
3.
4.
COLLECTOR
EMITTER
EMITTER
BASE
DIM
A
B
C
D
F
G
H
J
K
L
R
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.80
3.04
0.110
0.120
1.20
1.39
0.047
0.055
0.84
1.14
0.033
0.045
0.39
0.50
0.015
0.020
0.79
0.93
0.031
0.037
1.78
2.03
0.070
0.080
0.013
0.10 0.0005
0.004
0.08
0.15
0.003
0.006
0.46
0.60
0.018
0.024
0.445
0.60 0.0175
0.024
0.72
0.83
0.028
0.033
2.11
2.48
0.083
0.098
K
CASE 318A–05
ISSUE J
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MMBR521LT1 MRF5211LT1
8
◊
*MMBR521LT1/D*
MMBR521LT1/D
MOTOROLA RF DEVICE
DATA