Fairchild FDD5810 N-channel logic level trenchâ® mosfet 60v, 36a, 27m" Datasheet

FDD5810_F085
N-Channel Logic Level Trench® MOSFET!
60V, 36A, 27m"
Features
Applications
! RDS(ON) = 22m"!#Typ.), VGS = 5V, ID = 29A
! Motor / Body Load Control
! Qg(5) = 13nC (Typ.), VGS = 5V
! ABS Systems
! Low Miller Charge
! Powertrain Management
! Low Qrr Body Diode
! Injection System
! UIS Capability (Single Pulse / Repetitive Pulse)
! DC-DC converters and Off-line UPS
! Qualified to AEC Q101
! Distributed Power Architecture and VRMs
! RoHS Compliant
! Primary Switch for 12V and 24V systems
LE
FREE I
M ENTATIO
LE
N
MP
AD
D
D
G
S
G
D-PAK
TO-252
(TO-252)
©2010 Fairchild Semiconductor Corporation
FDD5810_F085 Rev. A1 (W)
S
1
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
May 2010
Symbol
VDSS
Drain to Source Voltage
Ratings
60
VGS
Gate to Source Voltage
$20
V
Drain Current Continuous (VGS = 10V)
37
A
Drain Current Continuous (VGS = 5V)
33
A
Continuous (TA = 25oC, VGS = 10V, with R%JA = 52oC/W)
7.4
A
ID
Parameter
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Units
V
Figure 4
A
45
mJ
Power Dissipation
72
W
Derate above 25oC
0.48
W/oC
Operating and Storage Temperature
o
-55 to 175
C
Thermal Characteristics
R%JC
R%JA
Maximum Thermal resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252,
1in2
copper pad area
2.1
oC/W
52
oC/W
Package Marking and Ordering Information
Device Marking
FDD5810
Device
FDD5810_F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
60
-
-
-
V
-
1
-
-
250
VGS = $20V
-
-
$100
nA
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250&A, VGS = 0V
VDS = 48V
VGS = 0V
TC = 150oC
&A
On Characteristics
VGS(TH)
RDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250&A
1
1.6
2
ID = 32A, VGS = 10V
-
18
22
ID = 29A, VGS = 5V
-
22
27
ID = 32A, VGS = 10V,
TJ = 175oC
-
43
53
-
1420
1890
-
150
200
pF
-
65
100
pF
m"
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
pF
RG
Gate Resistance
f = 1MHz
-
3.5
-
"
Qg
Total Gate Charge at 10V
VGS = 0V to 10V
-
24
34
nC
Qg
Total Gate Charge at 5V
VGS = 0V to 5V
-
13
18
nC
Qg(th)
Threshold Gate Charge
VGS = 0V to 1V
-
1.3
-
nC
Qgs
Gate to Source Gate Charge
-
4.0
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
2.7
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.0
-
nC
FDD5810_F085 Rev. A1 (W)
2
VDD = 30V
ID = 35A
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
ton
Turn-On Time
-
-
130
td(on)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
75
-
ns
VDD = 30V, ID = 35A
VGS = 5V, RGS = 11"
ns
td(off)
Turn-Off Delay Time
-
26
-
ns
tf
Fall Time
-
34
-
ns
toff
Turn-Off Time
-
-
90
ns
Drain-Source Diode Characteristics
ISD = 32A
-
-
1.25
V
ISD = 16A
-
-
1.0
V
Reverse Recovery Time
IF = 35A, di/dt = 100A/&s
-
-
39
ns
Reverse Recovery Charge
IF = 35A, di/dt = 100A/&s
-
-
35
nC
VSD
Source to Drain Diode Voltage
trr
Qrr
Notes:
1: Starting TJ = 25°C, L = 110µH, IAS = 28A, VDD = 54V, VGS = 10V.
FDD5810_F085 Rev. A1 (W)
3
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
Switching Characteristics
40
1.0
ID , DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
30
VGS = 10V
VGS = 5V
20
10
0.2
0
0
25
50
75
100
150
125
0
25
175
50
TC , CASE TEMPERATURE (oC)
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Z%JC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x R%JC + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
600
TC = 25oC
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
VGS = 5V
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
FDD5810_F085 Rev. A1 (W)
4
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
500
10us
10
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
IAS, AVALANCHE CURRENT (A)
ID , DRAIN CURRENT (A)
200
100
SINGLE PULSE
1ms
TJ = MAX RATED
o
TC = 25 C
10ms
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R!' 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
DC
1
0.1
1
10
100
200
0.001
0.01
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
1
10
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60
60
PULSE DURATION = 80&s
DUTY CYCLE = 0.5% MAX
VDD = 6V
VGS = 4.5V
VGS = 10V
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
0.1
tAV, TIME IN AVALANCHE (ms)
40
TJ = 25oC
20
VGS = 5V
VGS = 4V
40
VGS = 3.5V
20
VGS = 3V
TJ = 175oC
PULSE DURATION = 80&s
DUTY CYCLE = 0.5% MAX
TJ = -55oC
0
2.0
1.0
4.0
3.0
5.0
0
Figure 7. Transfer Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
26
ID = 35A
22
18
ID = 1A
14
6
8
2.4
2.0
2.5
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
PULSE DURATION = 80&s
DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.4
-80
10
VGS, GATE TO SOURCE VOLTAGE (V)
FDD5810_F085 Rev. A1 (W)
1.5
2.8
PULSE DURATION = 80&s
DUTY CYCLE = 0.5% MAX
4
1.0
Figure 8. Saturation Characteristics
30
2
0.5
VDS , DRAIN TO SOURCE VOLTAGE (V)
VGS , GATE TO SOURCE VOLTAGE (V)
RDS(ON), DRAIN TO SOURCE
ON RESISTANCE (m")
TC = 25oC
0
0
ID = 32A
VGS = 10V
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE(oC)
160
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
1.4
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS, ID = 250&A
1.1
0.8
0.5
ID = 250&A
1.1
1.0
0.9
0.2
-80
-40
0
40
80
120
160
-80
200
-40
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
40
80
120
160
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
VGS , GATE TO SOURCE VOLTAGE (V)
10
Ciss
C, CAPACITANCE (pF)
0
TJ , JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
1000
Coss
Crss
100
VDD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 35A
ID = 1A
2
VGS = 0V, f = 1MHz
10
0
0.1
1
10
60
0
VDS , DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source
Voltage
FDD5810_F085 Rev. A1 (W)
5
Figure 14. Gate Charge Waveforms for Constant
Gate Current
6
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
AccuPower!
Auto-SPM!
Build it Now!
CorePLUS!
CorePOWER!
CROSSVOLT!
CTL!
Current Transfer Logic!
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax!
ESBC!
F-PFS!
FRFET®
SM
Global Power Resource
Green FPS!
Green FPS! e-Series!
Gmax!
GTO!
IntelliMAX!
ISOPLANAR!
MegaBuck!
MICROCOUPLER!
MicroFET!
MicroPak!
MicroPak2!
MillerDrive!
MotionMax!
Motion-SPM!
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series!
FACT®
FAST®
FastvCore!
FETBench!
FlashWriter®*
FPS!
®
PDP SPM™
Power-SPM!
PowerTrench®
PowerXS™
Programmable Active Droop!
QFET®
QS!
Quiet Series!
RapidConfigure!
!
Saving our world, 1mW/W/kW at a time™
SignalWise!
SmartMax!
SMART START!
SPM®
STEALTH!
SuperFET!
SuperSOT!-3
SuperSOT!-6
SuperSOT!-8
SupreMOS!
SyncFET!
Sync-Lock™
®
*
The Power Franchise®
TinyBoost!
TinyBuck!
TinyCalc!
TinyLogic®
TINYOPTO!
TinyPower!
TinyPWM!
TinyWire!
TriFault Detect!
TRUECURRENT!*
"SerDes!
UHC®
Ultra FRFET!
UniFET!
VCX!
VisualMax!
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I48
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDD5810_F085 N-Channel Logic Level Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Similar pages