AOSMD AOT426L N-channel enhancement mode field effect transistor Datasheet

AOT426
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT426 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT426 is Pb-free (meets ROHS & Sony
259 specifications). AOT426L is a Green Product
ordering option. AOT426 and AOT426L are
electrically identical.
VDS (V) = 30V
ID = 85A
RDS(ON) < 6mΩ (VGS = 10V)
RDS(ON) < 11mΩ (VGS = 4.5V)
TO-220
D
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
A
ID
IDM
62.5
IAR
30
A
EAR
45
mJ
200
75
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
85
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
30
TJ, TSTG
°C
-55 to 175
Symbol
Steady-State
Steady-State
W
37.5
RθJC
Typ
40
1.3
Max
50
2
Units
°C/W
°C/W
AOT426
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=250µA, VGS=0V
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1
1.7
2.5
V
4.8
6
7
8.5
VGS=4.5V, ID=20A
8.5
11
VDS=5V, ID=30A
55
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
1
100
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
µA
nA
RDS(ON)
Output Capacitance
5
100
VGS=10V, ID=30A
Coss
Units
V
TJ=55°C
Gate-Body leakage current
Max
30
VDS=24V, VGS=0V
VGS(th)
IS
Typ
A
2342
VGS=0V, VDS=15V, f=1MHz
1
V
82
A
2810
pF
462
VGS=10V, VDS=15V, ID=30A
1.1
mΩ
S
pF
320
VGS=0V, VDS=0V, f=1MHz
mΩ
pF
1.5
Ω
70
84
nC
34.8
42
nC
13.1
nC
Gate Drain Charge
18.5
nC
Turn-On DelayTime
9
ns
11
ns
30.7
ns
9.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.50Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
34.5
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
28.3
42
34
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
5V
90
VDS=5V
4.5V
50
80
10V
70
40
4V
ID(A)
ID (A)
60
50
125°C
30
40
20
3.5V
30
20
25°C
5.5
6.6
9.5
10
VGS=3V
10
0
0
0
1
2
3
4
2
5
2.5
12
3.5
4
4.5
Normalized On-Resistance
1.8
VGS=4.5V
10
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
8
6
VGS=10V
4
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
2
0
10
0.8
20
30
40
50
60
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
1.0E+02
ID=30A
1.0E+01
16
12
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
125°C
1.0E-01
25°C
1.0E-02
8
1.0E-03
25°C
4
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOT426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=15V
ID=30A
3600
Ciss
3200
Capacitance (pF)
VGS (Volts)
8
6
4
2800
2400
2000
Coss
1600
Coss
Crss
1200
2
800
400
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
1000.0
RDS(ON)
limited
10µs
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
160
100µs
DC
1ms
10ms
1.0
Power (W)
100.0
5
30
200
TJ(Max)=175°C, TA=25°C
ID (Amps)
Crss
0
TJ(Max)=175°C
TA=25°C
120
80
40
0.1
0.1
1
10
100
VDS (Volts)
ZθJC Normalized Transient
Thermal Resistance
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
0
0.0001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOT426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
tA =
80
L ⋅ ID
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
60
40
20
TA=25°C
0.0001
0.001
25
100
75
50
25
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Current rating ID(A)
50
0
0
0.00001
0
75
175
175
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