TIGER ELECTRONIC CO.,LTD Product specification MJE13009 SWITCHMODE Series NPN Silicon Power Transistors DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and Deflection circuits. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 12.0 A Base Current IB 6.0 A Ptot 110 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-3PN O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=400V, IE=0 — — 1.0 mA Emitter Cut-off Current IEBO VEB=9V, IC=0 — — 1.0 mA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 400 — — V hFE(1) VCE=5V, IC=5.0A 8 — 40 hFE(2) VCE=5V, IC=8.0A 6 — 30 IC=8.0A,IB=1.6A — — 1.5 IC=12.0A,IB=3.0A — — 3.0 — — 1.6 V DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) IC=8.0A,IB=1.6A V Current Gain Bandwidth Product fT VCE=10V,IC=500mA 4 — — MHz Storage Time TS IB1=IB2=1.6A tp=25us — 3.5 4 us