ACE ACE2301B P-channel enhancement mode mosfet Datasheet

ACE2301B
P-Channel Enhancement Mode MOSFET
Description
ACE2301B is produced with high cell density DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits low voltage applications such as portable
equipment, power management and other battery powered circuits, and low in-line power dissipation are
needed in a very small outline surface mount package with excellent thermal and electrical capabilities.
Features



VDS=-20V, VGS 8V, ID=-2.3A
RDS(ON) @VGS=-4.5V/ID -2.8A, 100mR(Typ.)
RDS(ON) @VGS=-2.5V/ID -2A, 120mR(Typ.)
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current
Power Dissipation
Continuous
(1)
Pulsed
25 OC
O
70 C
ID
PD
-2.3
-10
750
480
Operating and Storage Temperature Range TJ,TSTG -55 to 150
A
mW
O
C
Packaging Type
SOT-23-3
3
SOT-23-3 Description
1
1
Gate
2
Source
3
Drain
2
VER 1.3
1
ACE2301B
P-Channel Enhancement Mode MOSFET
Ordering information
ACE2301B XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-20
V
Drain Cut-off Current
IDSS
VDS=-20V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±100
nA
On characteristics
RDS(ON)
VGS=-4.5V, ID=-2.8A
100
130
RDS(ON)
VGS=-2.5V, ID=-2A
120
200
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-0.75
-1.5
Forward Transconductance
gFS
VDS=-5V, ID=-2.8A
Drain-Source On-state Resistance
-0.45
mR
6.5
V
S
Switching characteristics(3)
Turn-On Delay Time
Turn-Off Delay Time
VDD=-6V,RL=6R
ID=-1A, VGEN=-4.5V
td(off)
RG=6R
Dynamic characteristics(3)
Td(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
13
25
42
70
ns
415
VDS=-6V, VGS=0V
f=1.0MHz
223
pF
87
Drain-source diode characteristics and maximum ratings
Diode Forward Voltage
VSD
IS=-1.6A,VGS=0V
-0.5
-1.2
V
Note: 1. Pulse width limited by maximum junction temperature
2. Pulse test: PW≦300us, duty cycle≦2%
3. For design AID only, not subject to production testing
4. Switching time is essentially independent of operating temperature
VER 1.3
2
ACE2301B
P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.3
3
ACE2301B
P-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3
Unit: mm
VER 1.3
4
ACE2301B
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
5
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