NTE363 Silicon NPN Transistor RF Power Amp, PO = 4W Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: D Designed for UHF Military and Commercial Equipment D 4W (Min) with Greater than 8dB Gain D Withstands Infinite VSWR Under Operating Conditions D Low Inductance Stripline Package D Emitter Stabilized Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6°C/W Electrical Characteristics: Parameter Collector–Emiter Breakdown Voltage Emitter–Base Breakdown Voltage Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 100mA, IB = 0, Note 1 16 – – V V(BR)CES IC = 100mA, IBE = 0, Note 1 36 – – V V(BR)EBO IE = 2mA, IC = 0 4 – – V mA Collector Cutoff Current ICBO VCB = 5V, IE = 0 – – 1.0 DC Current Gain hFE VCE = 5V, IC = 200mA 20 – – Note 1. Pulsed throught 25MH inductor. Electrical Characteristics (Cont’d): Parameter Symbol Test Conditions Min Typ Max Unit RF Characteristics, Small–Signal Output Capacitance Cob VCB = 12.5V, IC = 0 – – 25 pF Input Capacitance Cib VEB = 500mV, IC = 0 – 60 – pF Amplifier Power Out PO 470MHz/12.5V 4 – – W Amplifier Power Gain Pg 8 – – dB Input Impedance Zin 2.0 + J.96 Ω Output Impedance Zout 6.0 – J3.4 Ω RF Characteristics, Large–Signal B .225 (5.72) E E .530 (13.46) C .063 (1.62) .282 (7.17) Dia .123 (3.12) .005 (0.15) Seating Plane 8–32 NC–3A Wrench Flat .250 (6.35) Dia .630 (16.0)