Switching Diodes MA3V177 Silicon epitaxial planar type Unit : mm 4.0 ± 0.2 3.0 ± 0.2 For switching circuits 15.6 ± 0.5 ■ Features • Small terminal capacitance, Ct • Can be connected in series marking Reverse voltage (DC) VR 40 V 1 Peak reverse voltage VRM 40 V Forward current (DC) IF 100 mA Peak forward current IFM 200 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 1.27 1.27 2.0 ± 0.2 Unit 0.7 ± 0.1 Rating 0.45 − 0.1 Symbol Parameter + 0.2 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : Cathode Anode 3 : Cathode New S-Type Package 2.54 ± 0.15 Internal Connection 1 2 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 40 V 0.1 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct1*1 5.5 pF Ct2*2 VR = 0 V, f = 1 MHz 40 V 3.0 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 3 and 2 *2 : Between pins 2 and 1 1 MA3V177 Switching Diodes IF V F IR V R IF V F 103 Ta = 25°C Forward current IF (mA) 102 10 1 2 3 1 102 Ta = 25°C 102 Reverse current IR (µA) Forward current IF (mA) 103 10 1 2 3 1 Ta = 25°C 10 1 1 2 3 10−1 D1 (3-2) 0 0.4 0.8 1.2 1.6 10−1 2.0 0 0.4 Forward voltage VF (V) 0.8 D1 (3-2) Forward voltage VF (V) Reverse current IR (µA) 10−2 2.0 D2 (2-1) 10 1 2 3 1 1.2 1.0 1.0 0.8 IF = 10 mA 3 mA 1 mA 0.6 0.1 mA 0.4 10 20 30 40 0 50 Reverse voltage VR (V) −40 80 120 160 (°C) Ct VR f = 1 MHz Ta = 25°C Reverse current IR (µA) D1 (3-2) 1 2 3 Terminal capacitance Ct (pF) 5 1 3 2 D1 (3-2) 1 D2 (2-1) 0.5 0.3 1 0.2 0.1 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 0 50 0.8 IF = 10 mA 0.6 3 mA 1 mA 0.4 0 40 10 10 40 0.1 mA 1 2 3 0 IR Ta D2 (2-1) 30 0.2 Ambient temperature Ta 100 20 VF Ta 1.2 1 2 3 0 10 Reverse voltage VR (V) 0.2 10−1 D2 (2-1) 0 VF Ta Ta = 125°C 102 1.6 Forward voltage VF (V) IR VR 103 1.2 Forward voltage VF (V) 10−1 4 2 3 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) −40 0 40 80 120 160 Ambient temperature Ta (°C)