LTC2066 10µA Supply Current, Low IB, Zero-Drift Operational Amplifier DESCRIPTION FEATURES Low Supply Current: 10μA Maximum nn Offset Voltage: 5μV Maximum nn Offset Voltage Drift: 0.02μV/°C Maximum nn Input Bias Current nn 5pA Typical nn 50pA Maximum, –40°C to 85°C nn 150pA Maximum, –40°C to 125°C nn Integrated EMI Filter (90dB Rejection at 1.8GHz) nn Shutdown Current: 170nA Maximum nn Rail-to-Rail Input and Output nn 1.7V to 5.25V Operating Supply Range nn A VOL: 140dB Typical nn Low-Charge Power-Up for Duty Cycled Applications nn Specified Temperature Ranges: nn –40°C to 85°C nn –40°C to 125°C nn 6-Lead SC70, 5-Lead TSOT-23 Packages nn APPLICATIONS Signal Conditioning in Wireless Mesh Networks Portable Instrumentation Systems nn Low-Power Sensor Conditioning nn Gas Detection nn Temperature Measurement nn Medical Instrumentation nn Energy Harvesting Applications nn Low Power Current Sensing nn nn TYPICAL APPLICATION The LTC®2066 is a single low power, zero-drift, 100kHz amplifier. The LTC2066 enables high resolution measurement at extremely low power levels. Typical supply current is 7.5µA with a maximum of 10µA. The available shutdown mode has been optimized to minimize power consumption in duty-cycled applications and features low charge loss during power-up, reducing total system power. The LTC2066’s self-calibrating circuitry results in very low input offset (5µV max) and offset drift (0.02µV/°C). The maximum input bias current is only 35pA and does not exceed 150pA over the full specified temperature range. The extremely low input bias current of the LTC2066 allows the use of high value power-saving resistors in the feedback network. With its ultralow quiescent current and outstanding precision, the LTC2066 can serve as a signal chain building block in portable, energy harvesting and wireless sensor applications. The LTC2066 is available in 6-lead SC70 and 5-lead TSOT23 packages and is fully specified over the –40°C to 85°C and –40°C to 125°C temperature ranges. All registered trademarks and trademarks are the property of their respective owners. Micropower Low Side Current Sense Output Voltage 2.5 Precision Micropower Low Side Current Sense VIN ISENSE 100µA TO 250mA 3.3V – LOAD 10k* 0.1% 100mΩ 0.1% 1 1M 0.1% LTC2066 VOUT = 10 • ISENSE 1mV TO 2.5V + 2066 TA01a *RESISTOR CANCELS OUT PARASITIC SEEBECK EFFECT VOLTAGE OUTPUT VOLTAGE, VOUT (V) 10k 0.1% 0.1 0.01 0.001 0.1 1 10 ISENSE (mA) 100 250 2066 TA01b 2066f For more information www.linear.com/LTC2066 1 LTC2066 ABSOLUTE MAXIMUM RATINGS (Note 1) Total Supply Voltage (V+ to V–).................................5.5V Differential Input Current (+IN to –IN) (Note 2)..... ±10mA Differential Input Voltage (+IN to –IN).......................5.5V Input Voltage +IN, –IN, SHDN....................(V–) – 0.3V to (V+) + 0.3V Input Current +IN, –IN, SHDN (Note 2)................................... ±10mA Output Short-Circuit Duration (Note 3)...........................................Thermally Limited Operating and Specified Temperature Range (Note 4) LTC2066I..............................................–40°C to 85°C LTC2066H........................................... –40°C to 125°C Maximum Junction Temperature........................... 150°C Storage Temperature Range................... –65°C to 150°C PIN CONFIGURATION TOP VIEW + – –IN 3 5 V+ OUT 1 5 SHDN V 4 OUT –2 +IN 3 + – +IN 1 V– 2 TOP VIEW 6 V+ 4 –IN SC6 PACKAGE 6-LEAD PLASTIC SC70 S5 PACKAGE 5-LEAD PLASTIC TSOT-23 θJA = 265°C/W (Note 5) θJA = 215°C/W (Note 5) ORDER INFORMATION http://www.linear.com/product/LTC2066#orderinfo TAPE AND REEL (MINI) TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC2066ISC6#TRMPBF LTC2066ISC6#TRPBF LHDB 6-Lead Plastic SC70 –40°C to 85°C LTC2066HSC6#TRMPBF LTC2066HSC6#TRPBF LHDB 6-Lead Plastic SC70 –40°C to 125°C LTC2066IS5#TRMPBF LTC2066IS5#TRPBF LTHCZ 5-Lead Plastic TSOT-23 –40°C to 85°C LTC2066HS5#TRMPBF LTC2066HS5#TRPBF LTHCZ 5-Lead Plastic TSOT-23 –40°C to 125°C Consult ADI Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Parts ending with PBF are RoHS and WEEE compliant. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. 2 2066f For more information www.linear.com/LTC2066 LTC2066 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Unless otherwise noted, VS = 1.8V, VCM = VOUT = VS/2, VSHDN = 1.8V, RL to VS/2. SYMBOL PARAMETER VOS Input Offset Voltage Drift (Note 6) IB Input Bias Current TYP MAX UNITS 1 l ±5 ±10 μV μV –40°C to 85°C –40°C to 125°C l l ±0.03 ±0.05 μV/°C µV/°C –40°C to 85°C –40°C to 125°C ±2 l l ±30 ±50 ±150 pA pA pA Input Offset Current –40°C to 85°C –40°C to 125°C ±4 l l ±30 ±50 ±150 pA pA pA in Input Noise Current Spectral Density f ≤ 100Hz en Input Noise Voltage Spectral Density en P-P Input Noise Voltage CIN VCMR CMRR PSRR AVOL VOL MIN Input Offset Voltage (Note 6) ΔVOS/ΔT IOS CONDITIONS 35 fA/√Hz f ≤ 100Hz 90 nV/√Hz DC to 10Hz 1.9 μVP–P Input Capacitance Differential Common Mode 3.3 3.5 pF pF Input Voltage Range Guaranteed by CMRR l (V–) – 0.1 VCM RL = 499k 103 100 123 l dB dB VS = 1.7V to 5.25V RL = 499k 108 106 126 l dB dB 102 100 120 l dB dB 0.05 mV = (V–) – 0.1V to (V+) + 0.1V Common Mode Rejection Ratio (Note 7) Power Supply Rejection Ratio VOUT = (V–) + 0.1V to (V+) – 0.1V, RL = 499k Open Loop Gain (Note 7) Output Voltage Swing Low (VOUT – V–) RL = 499k RL = 10k (V+) + 0.1 3 l VOH Output Voltage Swing High (V+ – VOUT) RL = 499k 0.1 RL = 10k 4.5 l ISC Output Short Circuit Current Sourcing 10 20 V mV mV mV 10 50 mV mV 5.8 4 7.5 l mA mA 10.4 5 13 l mA mA Sinking SR Slew Rate AV = +1 17.5 V/ms GBW Gain Bandwidth Product RL = 499k 100 kHz tON Power-Up Time 0.4 ms fC Internal Chopping Frequency 25 kHz VS Supply Voltage Range Guaranteed by PSRR l IS Supply Current No Load –40°C to 85°C –40°C to 125°C l l In Shutdown (SHDN = V–) –40°C to 85°C –40°C to 125°C l l VH SHDN Pin Threshold, Logic High (Referred to V–) l VL SHDN Pin Threshold, Logic Low (Referred to V–) l ISHDN SHDN Pin Current VSHDN = 0V l 1.7 5.25 V 7.4 10 12.5 20 μA μA µA 90 170 250 500 nA nA nA 1.0 –150 V 0.65 V –20 nA 2066f For more information www.linear.com/LTC2066 3 LTC2066 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Unless otherwise noted, VS = 5V, VCM = VOUT = VS/2, VSHDN = 5V, RL to VS/2. SYMBOL PARAMETER VOS MIN TYP MAX UNITS 1 l ±5 ±10 μV μV –40°C to 85°C –40°C to 125°C l l ±0.02 ±0.04 μV/°C µV/°C –40°C to 85°C –40°C to 125°C ±5 l l ±35 ±50 ±150 pA pA pA –40°C to 85°C –40°C to 125°C ±10 l l ±35 ±50 ±150 pA pA pA Input Offset Voltage (Note 6) ΔVOS/ΔT Input Offset Voltage Drift (Note 6) IB Input Bias Current IOS CONDITIONS Input Offset Current in Input Noise Current Spectral Density f ≤ 100Hz 35 fA/√Hz en Input Noise Voltage Spectral Density f ≤ 100Hz 80 nV/√Hz en P–P Input Noise Voltage DC to 10Hz 1.7 μVP–P CIN Input Capacitance Differential Common Mode 3.3 3.5 pF pF VCMR Input Voltage Range Guaranteed by CMRR CMRR PSRR Common Mode Rejection Ratio Power Supply Rejection Ratio l (V–) – 0.1 VCM RL = 499k 111 108 134 l dB dB VS = 1.7V to 5.25V RL = 499k 108 106 126 l dB dB 66 79 90 76 dB dB dB dB 140 dB dB = (V–) – 0.1V to (V+) + 0.1V EMIRR EMI Rejection Ratio VRF = 100mVPK EMIRR = 20 • log(VRF/∆VOS) f = 400MHz f = 900MHz f = 1800MHz f = 2400MHz AVOL Open Loop Gain VOUT = (V–) + 0.1V to (V+) – 0.1V, RL = 499k l VOL Output Voltage Swing Low (VOUT – V–) 112 110 (V+) + 0.1 RL = 499k 0.1 RL = 10k 5.5 l VOH Output Voltage Swing High (V+ – VOUT) RL = 499k 7 l ISC Output Short Circuit Current mV 15 20 0.15 RL = 10k Sourcing V mV mV mV 15 20 mV mV 30 16 51 l mA mA 20 5 48 l mA mA Sinking SR Slew Rate AV = +1 17.5 V/ms GBW Gain Bandwidth Product RL = 499k 100 kHz tON Power-Up Time 0.4 ms fC Internal Chopping Frequency VS Supply Voltage Range Guaranteed by PSRR l IS Supply Current No Load –40°C to 85°C –40°C to 125°C l l In Shutdown (SHDN = V–) –40°C to 85°C –40°C to 125°C l l 4 25 1.7 kHz 5.25 V 7.5 10 12.5 20 μA μA µA 90 170 250 500 nA nA nA 2066f For more information www.linear.com/LTC2066 LTC2066 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Unless otherwise noted, VS = 5V, VCM = VOUT = VS/2, VSHDN = 5V, RL to VS/2. SYMBOL PARAMETER CONDITIONS MIN VH SHDN Pin Threshold, Logic High (Referred to V–) l VL SHDN Pin Threshold, Logic Low (Referred to V–) l ISHDN SHDN Pin Current VSHDN = 0V Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The inputs are protected by two series connected ESD protection diodes to each power supply. The input current should be limited to less than 10mA. The input voltage should not exceed 300mV beyond the power supply. Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. l TYP MAX 1.8 –150 UNITS V 0.8 V –20 nA Note 4: The LTC2066I is guaranteed to meet specified performance from –40°C to 85°C. The LTC2066H is guaranteed to meet specified performance from –40°C to 125°C. Note 5: Thermal resistance varies with the amount of PC board metal connected to the package. The specified values are for short traces connected to the leads. Note 6: These parameters are guaranteed by design. Thermocouple effects preclude measurements of these voltage levels during automated testing. VOS is measured to a limit determined by test equipment capability. Note 7: Minimum specifications for these parameters are limited by noise and the capabilities of the automated test system. 2066f For more information www.linear.com/LTC2066 5 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS 80 70 260 TYPICAL UNITS 70 VS = 5V 60 NUMBER OF AMPLIFIERS 50 40 30 20 40 30 20 10 0 0 3 4 5 2066 G01 Input Offset Voltage Drift Distribution (H-Grade) 120 80 60 40 –5 –4 –3 –2 –1 0 1 VOS (µV) 0 5 60 50 40 30 20 0 5 120 40 5 4 3 100 80 60 40 20 0 5 0 10 15 20 25 30 35 40 45 50 VOS TC (nV/°C) 6 1 2 VOS (µV) 1 0 –1 0 –2 –2 –4 –3 –3 –6 –4 –4 –8 –5 –0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VCM (V) –5 –0.5 0.5 5 TYPICAL UNITS VCM = VS/2 TA = 25°C 8 4 0 10 15 20 25 30 35 40 45 50 VOS TC (nV/°C) 10 5 TYPICAL UNITS VS = 1.8V TA = 25°C –2 6 5 Input Offset Voltage vs Supply Voltage 2 2066 G07 0 2066 G06 2 –1 260 TYPICAL UNITS VS = 1.8V TA = –40°C TO 85°C 2066 G05 5 TYPICAL UNITS VS = 5V TA = 25°C 10 15 20 25 30 35 40 45 50 VOS TC (nV/°C) 2066 G03 Input Offset Voltage vs Input Common Mode Voltage 0 5 Input Offset Voltage Drift Distribution (I-Grade) 60 0 10 15 20 25 30 35 40 45 50 VOS TC (nV/°C) 0 2066 G02 20 VOS (µV) VOS (µV) 3 4 80 Input Offset Voltage vs Input Common Mode Voltage 4 3 100 2066 G04 5 2 260 TYPICAL UNITS VS = 5V TA = –40°C TO 85°C 120 20 0 70 10 140 NUMBER OF AMPLIFIERS NUMBER OF AMPLIFIERS 100 80 Input Offset Voltage Drift Distribution (I-Grade) 260 TYPICAL UNITS VS = 1.8V TA = –40°C TO 125°C 260 TYPICAL UNITS VS = 5V TA = –40°C TO 125°C 90 50 10 2 100 260 TYPICAL UNITS VS = 1.8V NUMBER OF AMPLIFIERS NUMBER OF AMPLIFIERS 60 –5 –4 –3 –2 –1 0 1 VOS (µV) Input Offset Voltage Drift Distribution (H-Grade) Input Offset Voltage Distribution NUMBER OF AMPLIFIERS Input Offset Voltage Distribution 1 VCM (V) 1.5 2 2.5 2066 G08 –10 1 1.5 2 2.5 3 3.5 VS (V) 4 4.5 5 5.5 2066 G09 2066f For more information www.linear.com/LTC2066 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS Input Bias Current Distribution 1500 6276 TYPICAL UNITS VS = 5V TA = 25°C 6276 TYPICAL UNITS VS = 1.8V TA = 25°C 1250 NUMBER OF AMPLIFIERS 1250 NUMBER OF AMPLIFIERS Input Bias Current Distribution 1500 1000 750 500 1000 250 750 500 250 0 –20 –16 –12 –8 –4 0 4 8 12 16 20 INPUT BIAS CURRENT (pA) 0 –10 –8 –6 –4 –2 0 2 4 6 INPUT BIAS CURRENT (pA) 2066 G10 Input Bias Current vs Input Common Mode Voltage 20 VS = 5V 10 15 IB (–IN) 10 IB (+IN) 5 IB (+IN) IB (pA) IB (pA) VS = 5V TA = 25°C 15 20 5 0 IB (–IN) –5 0 –10 –5 –15 –10 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 –20 –0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VCM (V) 125 2066 G13 2066 G12 Input Bias Current vs Input Common Mode Voltage 10 8 Input Bias Current vs Supply Voltage 10 VS = 1.8V TA = 25°C 6 4 IB (pA) 0 IB (+IN) –2 IB (+IN) 4 IB (–IN) 2 2 0 –4 –6 –6 –8 IB (–IN) –2 –4 –10 –0.5 VCM = VS/2 TA = 25°C 8 6 IB (pA) 10 2066 G11 Input Bias Current vs Temperature 25 8 –8 0 0.5 1 1.5 VCM (V) 2 2.5 –10 1 1.5 2 2066 G14 2.5 3 3.5 VS (V) 4 4.5 5 5.5 2066 G15 2066f For more information www.linear.com/LTC2066 7 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS 10 Input Offset and Average Current vs Input Common Mode Voltage 5 VS = 5V TA = 25°C 8 3 IB (pA) IB (pA) 0 –2 –4 1 0 –1 –2 IOS –6 IAVG 2 IAVG 2 VS = 1.8V TA = 25°C 4 6 4 IOS –3 –4 –8 –5 –0.5 –10 –0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VCM (V) 0 0.5 1 1.5 VCM (V) 2 10k CURRENT NOISE DENSITY (fA/√Hz) 1k VS = ± 0.9V VS = ± 2.5V 1 10 100 1k FREQUENCY (Hz) 10k VS = 5V VCM = 2.5V 10 0.1 1 10 100 1k 10k 100k FREQUENCY (Hz) 120 100 1k 10k 100k 1M 10M FREQUENCY (Hz) 2066 G22 4 –PSRR 0 50 40 30 20 10 0 AV = +100 AV = +10 AV = +1 –10 AV = –1 –20 10 100 1k 10k FREQUENCY (Hz) 100k 1M 2066 G23 VS = 5V RL = 499kΩ RF = 1MΩ AV = +1000 60 CLOSED LOOP GAIN (dB) +PSRR 60 20 10 70 VS = 5V RL = 499kΩ 40 1 1 RF FREQUENCY (GHz) Closed Loop Gain vs Frequency 80 PSRR (dB) CMRR (dB) 0 0.1 0.1 2066 G21 Power Supply Rejection Ratio vs Frequency VS = 5V 20 20 0.05 1M 2066 G20 100 40 60 40 RL = 499kΩ VS = 1.8V 80 100 100k 80 VIN = 100mVPK EMIRR = 20log(100mV/∆VOS) 1k 120 60 EMI Rejection vs Frequency 100 Common Mode Rejection Ratio vs Frequency 100 2066 G18 120 2066 G19 140 TIME (1s/DIV) EMIRR (dB) VOLTAGE NOISE DENSITY (nV/√Hz) 10k 10 0.1 2.5 Input Referred Current Noise Density Input Referred Voltage Noise Density 100 VS = ± 2.5V 2066 G17 2066 G16 8 DC to 10Hz Voltage Noise INPUT-REFERRED VOLTAGE NOISE (0.5µV/DIV) Input Offset and Average Current vs Input Common Mode Voltage –30 10 100 1k 10k 100k FREQUENCY (Hz) 1M 10M 2066 G24 2066f For more information www.linear.com/LTC2066 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS Open Loop Gain and Phase vs Frequency 140 100 –90 100 –90 80 –135 80 –135 60 –180 60 PHASE –225 20 –270 GAIN 0 –20 CL = 0pF CL = 47pF CL = 100pF –40 –60 1m 10m100m 1 PHASE (°) 40 120 GAIN (dB) 120 PHASE 0 VS = 1.8V RL = 499kΩ –45 –180 GAIN 40 –225 20 –270 –315 0 –315 –360 –20 –405 –40 –450 10 100 1k 10k 100k 1M 10M FREQUENCY (Hz) –360 CL = 0pF CL = 47pF CL = 100pF –60 1m 10m100m 1 –405 –450 10 100 1k 10k 100k 1M 10M FREQUENCY (Hz) 2066 G25 2066 G26 Shutdown Transient with Sinusoidal Input Open Loop Gain vs Load OPEN LOOP GAIN (dB) 150 VS = 5V 145 VSHDN 5V/DIV 140 IS 5µA/DIV 135 VOUT, VIN 0.1V/DIV 130 125 120 400µs/DIV 1 10 RLOAD (kΩ) 100 2066 G27 Enable Transient with Sinusoidal Input VSHDN 2V/DIV Enable Transient with Sinusoidal Input VSHDN 5V/DIV IS 5µA/DIV VSHDN 2V/DIV IS 5µA/DIV IS 5µA/DIV VOUT, VIN 0.1V/DIV VOUT, VIN 0.2V/DIV VOUT, VIN 1V/DIV 400µs/DIV 2066 G28 VS = ± 2.5V AV = +1 500 Shutdown Transient with Sinusoidal Input VS = ± 0.9V AV = +1 PHASE (°) 0 VS = 5V RL = 499kΩ –45 140 GAIN (dB) Open Loop Gain and Phase vs Frequency 2066 G29 400µs/DIV 2066 G30 VS = ± 2.5V AV = +1 400µs/DIV 2066 G31 VS = ± 0.9V AV = +1 2066f For more information www.linear.com/LTC2066 9 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS Closed Loop Output Impedance vs Frequency 1M Output Impedance in Shutdown vs Frequency 1G VS = 5V AV = +1 100k 100M 10M 1k ZOUT (Ω) ZOUT (Ω) 10k 100 1M 100k 10 10k 1 0.1 VS = 5V AV = +1 10 100 1k 10k 100k FREQUENCY (Hz) 1M 1k 10M 10 100 1k 10k 100k FREQUENCY (Hz) TOTAL HARMONIC DISTORTION (dB) –20 AV = +1 VS = ±2.5V VOUT = ±2V –40 –60 –80 –100 –120 RL = 10k RL = 499k 20 100 FREQUENCY (Hz) 1k 2k Maximum Undistorted Output Amplitude vs Frequency 12.5 5 10.0 4 3 2 AV = +1 VS = ±2.5V THD < –40dB RL = 499k 1 0 100 80 VS = 1.8V VS = 5V 1k FREQUENCY (Hz) Supply Current vs SHDN Pin Voltage 16 7 6 0 25 50 75 TEMPERATURE (°C) 100 125 12 2066 G37 125°C 85°C 25°C –40°C 10 40 8 30 6 20 4 10 2 0 VS = 1.8V 14 IS (µA) IS (µA) IS (µA) 2066 G36 50 8 TA = 125°C TA = 85°C TA = 25°C TA = –40°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS (V) 10k 125°C 85°C 25°C –40°C 70 9 10 VS = 5V 60 –25 5.0 Supply Current vs SHDN Pin Voltage 10 5 –50 7.5 2.5 2066 G35 Supply Current vs Temperature 11 Supply Current vs Supply Voltage 6 2066 G34 12 10M 2066 G33 IS (µA) THD vs Frequency MAXIMUM UNDISTORTED OUTPUT VOLTAGE (VP–P) 2066 G32 1M 0 0.5 1 1.5 2 2.5 3 3.5 4 SHDN PIN VOLTAGE (V) 4.5 5 2066 G38 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 SHDN PIN VOLTAGE (V) 2066 G39 2066f For more information www.linear.com/LTC2066 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS SHDN Pin Pull-Up Current vs SHDN Pin Voltage 20 VS = 5V 10 0 –10 –20 0 –20 –50 –40 –50 –60 –60 –70 –70 –80 –80 –90 –90 0 1 2 3 VSHDN (V) 4 5 –100 6 –1 300 0 2066 G40 0.5 1 1.5 –80 –50 2 4000 V+ – VOH (mV) IS (nA) 200 100 50 –50 VS = 1.8V VS = 5V –25 0 25 50 75 TEMPERATURE (°C) 2066 G43 1000 100 10 125°C 85°C 25°C –40°C 100 0.1 0.01 125 0.1 2066 G44 Output Voltage Swing Low vs Load Current 4000 VS = ± 0.9V 125 VS = ± 2.5V 1 100 Output Voltage Swing High vs Load Current 100 1000 150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VS (V) 0 25 50 75 TEMPERATURE (°C) Output Voltage Swing High vs Load Current 250 50 –25 2066 G42 300 150 VS = 1.8V VS = 5V 2066 G41 350 200 0 –60 Shutdown Supply Current vs Temperature 250 IS (nA) –0.5 VSHDN (V) 125°C 85°C 25°C –40°C 350 –50 –70 Shutdown Supply Current vs Supply Voltage 400 VSHDN = 0V –40 –30 ISHDN (nA) ISHDN (nA) –40 –1 125°C 85°C 25°C –40°C –10 –30 –100 VS = 1.8V 10 125°C 85°C 25°C –40°C SHDN Pin Current vs Temperature –30 ISHDN (nA) 20 SHDN Pin Pull-Up Current vs SHDN Pin Voltage 1 ISOURCE (mA) 10 100 2066 G45 Output Voltage Swing Low vs Load Current 1000 VS = ± 2.5V VS = ± 0.9V 1000 100 10 1 0.1 0.01 125°C 85°C 25°C –40°C 0.1 1 ISOURCE (mA) 10 100 2066 G46 100 VOL – V– (mV) VOL – V- (mV) V+ – VOH (mV) 100 10 125°C 85°C 25°C –40°C 1 0.1 0.01 0.1 1 ISINK (mA) 10 100 2066 G47 10 1 0.1 0.01 125°C 85°C 25°C –40°C 0.1 1 ISINK (mA) 10 100 2066 G48 2066f For more information www.linear.com/LTC2066 11 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS Output Short Circuit Current vs Temperature No Phase Reversal 90 AV = +1 VS = ±2.5V VIN = 5.6VP–P Output Short Circuit Current vs Temperature 20 VS = ± 2.5V 80 70 VS = ± 0.9V 15 ISC (mA) ISC (mA) VOLTAGE (1V/DIV) 60 50 40 10 30 5 20 SOURCING SINKING 10 VOUT VIN 0 –50 –25 1ms/DIV 0 25 50 75 TEMPERATURE (°C) 100 0 –50 125 SINKING SOURCING –25 0 25 50 75 TEMPERATURE (°C) 2066 G50 2066 G49 Large Signal Response Small Signal Response VS = ±2.5V VIN = 40mVP–P AV = +1 VOUT (0.5V/DIV) VOUT (10mV/DIV) VS = ±0.9V AV = +1 VOUT (1V/DIV) 125 2066 G51 Large Signal Response VS = ±2.5V AV = +1 100 CL = 3.9pF CL = 100pF 200µs/DIV 200µs/DIV 20µs/DIV 2066 G52 2066 G53 2066 G54 Small Signal Overshoot vs Load Capacitance Small Signal Response 80 VS = ±0.9V VIN = 40mVP–P AV = +1 Small Signal Overshoot vs Load Capacitance 60 VS = ±2.5V VIN = 40mVP–P AV = +1 70 VS = ±0.9V VIN = 40mVP–P AV = +1 50 OVERSHOOT (%) OVERSHOOT (%) VOUT (10mV/DIV) 60 50 40 30 40 30 20 20 10 CL = 3.9pF CL = 100pF 0 20µs/DIV 2066 G55 12 +OS –OS 1 10 100 CL (pF) 1000 2066 G56 10 0 +OS –OS 1 10 100 CL (pF) 1000 2066 G57 2066f For more information www.linear.com/LTC2066 LTC2066 TYPICAL PERFORMANCE CHARACTERISTICS Positive Output Overload Recovery VOUT 0.5V/DIV VOUT 1V/DIV VIN 50mV/DIV VOUT 1V/DIV VIN 50mV/DIV 200µs/DIV Negative Output Overload Recovery Positive Output Overload Recovery VIN 50mV/DIV 2066 G58 400µs/DIV 2066 G59 200µs/DIV 2066 G60 VS = ±2.5V AV = –100 VS = ±0.9V AV = –100 VS = ±2.5V AV = –100 Negative Output Overload Recovery Positive Input Overload Recovery Positive Input Overload Recovery VOUT 0.5V/DIV VIN 50mV/DIV 400µs/DIV VIN 1V/DIV VIN 0.5V/DIV VOUT 1V/DIV VOUT 0.5V/DIV 2066 G61 VS = ±0.9V AV = –100 100µs/DIV 2066 G62 VS = ±2.5V AV = +1 40µs/DIV 2066 G63 VS = ±0.9V AV = +1 Negative Input Overload Recovery Negative Input Overload Recovery VIN 0.5V/DIV VIN 1V/DIV VOUT 0.5V/DIV VOUT 1V/DIV 100µs/DIV VS = ±2.5V AV = +1 2066 G64 40µs/DIV 2066 G65 VS = ±0.9V AV = +1 2066f For more information www.linear.com/LTC2066 13 LTC2066 PIN FUNCTIONS V–: Negative Power Supply. A bypass capacitor should be used between supply pins and ground. OUT: Amplifier Output –IN: Inverting Amplifier Input +IN: Noninverting Amplifier Input V+: Positive Power Supply. A bypass capacitor should be used between supply pins and ground. SHDN: Shutdown Control Pin. The SHDN pin threshold is referenced to V–. If tied to V+, the part is enabled. If tied to V–, the part is disabled and draws less than 170nA of supply current. It is recommended not to float this pin. BLOCK DIAGRAM Amplifier Shutdown Circuit V+ V+ V+ 50nA 10k SHDN +IN V– 7k V– V+ EMI FILTER 7k SHDN V+ V+ 2066 BDb V– + OUT – 2066 BDa V– V– –IN V– 14 2066f For more information www.linear.com/LTC2066 LTC2066 APPLICATIONS INFORMATION Using the LTC2066 The LTC2066 is a zero-drift operational amplifier with the open-loop voltage gain and bandwidth characteristics of a conventional operational amplifier. Advanced circuit techniques allow the LTC2066 to operate continuously through its entire bandwidth while self-calibrating unwanted errors. Input Voltage Noise Zero-drift amplifiers like the LTC2066 achieve low input offset voltage and 1/f noise by heterodyning DC and flicker noise to higher frequencies. In early zero-drift amplifiers, this process resulted in idle tones at the self-calibration frequency, often referred to as the chopping frequency. These artifacts made early zero-drift amplifiers difficult to use. The advanced circuit techniques used by the LTC2066 suppress these spurious artifacts, allowing for trouble-free use. Input Current Noise For applications with high source and feedback impedances, input current noise can be a significant contributor to total output noise. For this reason, it is important to consider noise current interaction with circuit elements placed at the amplifier’s inputs. CURRENT NOISE DENSITY (fA/√Hz) 10k VS = 5V VCM = 2.5V 1k 100 10 0.1 1 10 100 1k 10k 100k FREQUENCY (Hz) 1M 2066 F01 Figure 1. Input Current Noise Spectrum The current noise spectrum of the LTC2066 is shown in Figure 1. Low input current noise is achieved through the use of MOSFET input devices and self-calibration techniques to eliminate 1/f current noise. As with all zero-drift amplifiers, there is an increase in current noise at the offset-nulling frequency. This phenomenon is discussed in the Input Bias Current and Clock Feedthrough section. Input current noise also rises with frequency due to capacitive coupling of MOSFET channel thermal noise. Input Bias Current and Clock Feedthrough The input bias current of zero-drift amplifiers has different characteristics than that of a traditional operational amplifier. The specified input bias current is the DC average of transient currents which conduct due to the input stage’s switching circuitry. In addition to this, junction leakages can contribute additional input bias current at elevated temperatures. Through careful design and the use of an innovative boot-strap circuit the input bias current of the LTC2066 does not exceed 35pA at room and 150pA over the full temperature range. This minimizes bias current induced errors even in high impedance circuits. Transient switching currents at the input interact with source and feedback impedances producing error voltages which are indistinguishable from a valid input signal. The resulting error voltages are amplified by the amplifier’s closed-loop gain, which acts as a filter, attenuating frequency components above the circuit bandwidth. This phenomenon is known as clock feedthrough and is present in all zero-drift amplifiers. Understanding the cause and effect of clock feedthrough is important when using zero-drift amplifiers. For zero-drift amplifiers, clock feedthrough is proportional to source and feedback impedances, as well as the magnitude of the transient currents. These transient currents have been minimized in the LTC2066 to allow use with high source and feedback impedances. Many circuit designs require high feedback impedances to minimize 2066f For more information www.linear.com/LTC2066 15 LTC2066 Thermocouple Effects In order to achieve accuracy on the microvolt level, thermocouple effects must be considered. Any connection of dissimilar metals forms a thermoelectric junction and generates a small temperature-dependent voltage. Also known as the Seebeck Effect, these thermal EMFs can be the dominant error source in low-drift circuits. Connectors, switches, relay contacts, sockets, resistors, and solder are all candidates for significant thermal EMF generation. Even junctions of copper wire from different manufacturers can generate thermal EMFs of 200nV/°C, which significantly exceeds the maximum drift specification of the LTC2066. Figures 2 and 3 illustrate the potential magnitude of these voltages and their sensitivity to temperature. In order to minimize thermocouple-induced errors, attention must be given to circuit board layout and component selection. It is good practice to minimize the number of junctions in the amplifier’s input signal path and avoid connectors, sockets, switches, and relays whenever possible. If such components are required, they should be selected for low thermal EMF characteristics. Furthermore, the number, type, and layout of junctions should be matched for both inputs with respect to thermal gradients on the circuit board. Doing so may involve deliberately introducing dummy junctions to offset unavoidable junctions. Air currents can also lead to thermal gradients and cause significant noise in measurement systems. It is important to prevent airflow across sensitive circuits. Doing so will often reduce thermocouple noise substantially. A summary of techniques can be found in Figure 4. 16 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 35 30 40 45 TEMPERATURE (°C) 2066 F02 Figure 2. Thermal EMF Generated by Two Copper Wires from Different Manufacturers THERMALLY PRODUCED VOLTAGE IN MICROVOLTS power consumption and/or require a sensor which is intrinsically high impedance. In these cases, a capacitor can be used, either at the input or across the feedback resistor, to limit the bandwidth of the closed-loop system. Doing so will effectively filter out the clock feedthrough signal. MICROVOLTS REFERRED TO 25°C APPLICATIONS INFORMATION 100 SLOPE ≈ 1.5µV/°C BELOW 25°C 50 0 64% SN/36% Pb 60% Cd/40% SN SLOPE ≈ 160nV/°C BELOW 25°C –50 –100 10 30 0 40 50 20 SOLDER-COPPER JUNCTION DIFFERENTIAL TEMPERATURE SOURCE: NEW ELECTRONICS 02-06-77 2066 F03 Figure 3. Solder-Copper Thermal EMFs Leakage Effects Leakage currents into high impedance signal nodes can easily degrade measurement accuracy of sub-nanoamp signals. High voltage and high temperature applications are especially susceptible to these issues. Quality insulation materials should be used, and insulating surfaces should be cleaned to remove fluxes and other residues. For humid environments, surface coating may be necessary to provide a moisture barrier. 2066f For more information www.linear.com/LTC2066 LTC2066 APPLICATIONS INFORMATION HEAT SOURCE/ POWER DISSIPATOR RG** +– VIN THERMAL GRADIENT +IN OUT LTC2066 † NC ‡ VTHERMAL RL§ –IN RG +– VTHERMAL RF§ RELAY ** # RF MATCHING RELAY # * 2066 F04 * CUT SLOTS IN PCB FOR THERMAL ISOLATION. ** INTRODUCE DUMMY JUNCTIONS AND COMPONENTS TO OFFSET UNAVOIDABLE JUNCTIONS OR CANCEL THERMAL EMFs. † ALIGN INPUTS SYMMETRICALLY WITH RESPECT TO THERMAL GRADIENTS. ‡ INTRODUCE DUMMY TRACES AND COMPONENTS FOR SYMMETRICAL THERMAL HEAT SINKING. § LOADS AND FEEDBACK CAN DISSIPATE POWER AND GENERATE THERMAL GRADIENTS. BE AWARE OF THEIR THERMAL EFFECTS. # COVER CIRCUIT TO PREVENT AIR CURRENTS FROM CREATING THERMAL GRADIENTS. Figure 4. Techniques for Minimizing Thermocouple-Induced Errors NO SOLDER MASK OVER GUARD RING GUARD RING LEAKAGE CURRENT VBIAS ‡ –IN HIGH-Z SENSOR RF +IN V– § V+ V– OUT VOUT V+ ‡ NO LEAKAGE CURRENT, V–IN = V+IN § AVOID DISSIPATING SIGNIFICANT AMOUNTS OF POWER IN THIS RESISTOR. IT WILL GENERATE THERMAL GRADIENTS WITH RESPECT TO THE INPUT PINS AND LEAD TO THERMOCOUPLE-INDUCED ERROR. THERMALLY ISOLATE OR ALIGN WITH INPUTS IF RESISTOR WILL CAUSE HEATING. GUARD RING VBIAS RF HIGH-Z SENSOR VIN –+ V+ RIN – LEAKAGE CURRENT LTC2066 VOUT + V– LEAKAGE CURRENT IS ABSORBED BY GROUND INSTEAD OF CAUSING A MEASUREMENT ERROR. 2066 F05 Figure 5. Example Layout of Inverting Amplifier with Leakage Guard Ring 2066f For more information www.linear.com/LTC2066 17 LTC2066 APPLICATIONS INFORMATION Board leakage can be minimized by encircling the input connections with a guard ring operated at a potential very close to that of the inputs. The ring must be tied to a low impedance node. For inverting configurations, the guard ring should be tied to the potential of the positive input (+IN). For noninverting configurations, the guard ring should be tied to the potential of the negative input (–IN). In order for this technique to be effective, the guard ring must not be covered by solder mask. Ringing both sides of the printed circuit board may be required. See Figure 5 for an example of proper layout. Shutdown Mode The LTC2066 in the SC70 package features a shutdown mode for low-power applications. In the OFF state, the amplifier draws less than 170nA of supply current and the output presents a high impedance to external circuitry. Shutdown operation is accomplished by tying SHDN below VL. If the shutdown feature is not required, it is recommended that SHDN be tied to V+. A 50nA current source pulls the SHDN pin high to keep the amplifier in the ON state when the pin is floated, however this may not be reliable at elevated temperatures due to board leakage (see SHDN Circuit Block Diagram, page 14). For operation in noisy environments, a capacitor between SHDN and V+ is recommended to prevent noise from changing the shutdown state. When there is a danger of SHDN being pulled beyond the supply rails, resistance in series with the SHDN pin is recommended to limit the resulting current. Start-Up Characteristics Micropower op amps are often not micropower during start-up, which can cause problems when used on low current supplies. Large transient currents can conduct during power-up until the internal bias nodes settle to their final values. A large amount of current can be drawn from the supplies during this transient, which can sustain for several milliseconds in the case of a micropower part. In the worst case, there may not be enough supply cur- 18 rent available to take the system up to nominal voltages. In other cases, this transient power-up current will lead to added power loss in duty-cycled applications. A way to quantify the transient current loss is to integrate the supply current during power-up to examine the total charge loss. If there were no additional transient current, the integrated supply current would appear as a smooth, straight line with a slope equal to the DC supply current of the part. Any deviation from a straight line indicates additional transient current that is drawn from the supply. The LTC2066 has been designed to minimize this charge loss during power-up so that power can be conserved in dutycycled applications. Figure 6 shows the integrated supply current (i.e. charge) of the LTC2066 during power-up. Likewise, Figure 7 shows the charge loss due to enabling and disabling the part via the SHDN pin. V– 5V/DIV VOUT 2V/DIV QV+ 10nC/DIV 500µs/DIV 2066 F06 1V/µs V– EDGE RATE V+ = 5V Figure 6. Charge Loss During Power-Up VSHDN 5V/DIV VOUT 2V/DIV QV+ 10nC/DIV 500µs/DIV 2066 F07 Figure 7. Charge Loss Due to Enabling and Disabling via SHDN Pin 2066f For more information www.linear.com/LTC2066 LTC2066 APPLICATIONS INFORMATION There are benefits when the SHDN pin is used to disable and enable the part in duty-cycled applications, rather than powering down the external supply voltage (V+). Powering up and powering down the external supply will tend to waste charge due to charging and discharging the external decoupling capacitors. For these power-cycled applications, a relay or MOS device can be located after the decoupling capacitors to alleviate this; however there are drawbacks to this approach. The LTC2066 draws an initial charge of approximately 3nC when powered up. This recurring charge loss is unavoidable in power-cycled applications. Additionally, if the supply ramp rate exceeds 0.4V/µs, an internal transient ESD clamp will trigger, conducting additional current from V+ to V–. This will waste charge and can make insignificant any gain that may have been expected by power-cycling the supply. Figure 8 shows the charge loss at power-up. The shutdown pin can be used to overcome these limitations in duty-cycled applications. The typical charge loss transitioning into and out of shutdown is only 2.3nC. Since the supply is not transitioned, the external decoupling capacitors do not draw charge from the supply. CHARGE CONSUMED TO 0.1% SETTLED POINT (nC) 100 10 Gas Sensor This low power precision gas sensor circuit operates in an oxygen level range of 0% to 30%, with a nominal output of 1V in normal atmospheric oxygen concentrations (20.9%) when the gas sensor has been fully initialized. Total active power consumption is less than 10.1μA on a single rail supply. Since this gas sensor produces 100μA in a normal oxygen environment and requires a 100Ω load resistor, the resulting input signal is typically around 10mV. The LTC2066’s rail-to-rail input means no additional DC level shifting is necessary, all the way down to very low oxygen concentrations. Due to the extremely low input offset voltage of the LTC2066, which is 1μV typically and 5μV maximum, it is possible to gain up the mV-scale input signal substantially without introducing significant error. In the configuration shown in Figure 9, with a noninverting gain of 101V/V, the worst-case input offset results in a maximum of 0.5mV offset on the 1V output, or 0.05% error. Although the 100kΩ resistor in series with the gas sensor does not strictly have the same precision requirement as the 10MΩ and 100kΩ resistors that set the gain, it is important to use a similar resistor at both input terminals. This helps to minimize additional offset voltage at the inputs due to thermocouple effects and bias current, hence the similar 0.1% precision requirement. 10M 0.1% 1 0.1 1 SUPPLY EDGE RATE (V/µs) 2 OXYGEN SENSOR CITY TECHNOLOGY 40XV 100k 0.1% 100k* 0.1% 100Ω 0.1% 2066 F08 Figure 8. Power-Up Charge vs Supply Edge Rate www.citytech.com 1.8V – LTC2066 + VOUT = 1V IN AIR ISUPPLY = 7.5µA (ENABLED) 90nA (SHUTDOWN) VSHDN 2066 F09 *RESISTOR CANCELS OUT PARASITIC SEEBECK EFFECT VOLTAGE Figure 9. Micropower Precision Oxygen Sensor 2066f For more information www.linear.com/LTC2066 19 LTC2066 APPLICATIONS INFORMATION RTD Sensor This low power platinum resistance temperature detector (RTD) sensor circuit draws only 43μA total supply current on a minimum 2.6V rail, and is accurate to within ±1°C at room temperature, including all error intrinsic to the Vishay PTS Class F0.3 Variant RTD. It covers the temperature range from –40°C to 85°C in 10mV/°C increments and produces an output of 1V at nominal room temperature of 25°C. The LTC2066’s extremely low typical offset of 1μV and typical input bias current of 5pA allows for the use of a very low excitation current in the RTD. Thus, self-heating is negligible, improving accuracy. The LT5400-3, B-grade, is used to provide a ±0.025% matched resistor network that is effectively a precision 131:1 voltage divider. This precision divider forms one half of a bridge circuit, with the 0.1% 110kΩ and RTD in the other branch. Note that the 110kΩ’s precision requirement is to ensure matching with the RTD. The 11kΩ R2 serves to provide a DC offset for the entire bridge so that IN 2.6V ≤ VSUPPLY ≤ 18V + – C1 0.1µF LT6656-2.048 GND the output is 1V at room temperature. Since bridge imbalances can lead to error, it is recommended to minimize the length of the leads connecting the RTD to reduce additional lead resistance. The LT6656-2.048 reference helps create a known excitation current in the RTD at each temperature of operation, and also acts as a supply for the LTC2066, all while using less than 1μA itself. The LT6656 can accept input voltages anywhere between 2.6V and 18V, allowing for flexibility in selection of supply voltage while maintaining a fixed output range. The LT6656 reference can easily source the 43μA required to run the entire circuit, thanks to the LTC2066’s 10μA maximum supply current and ability to handle microvolt signals produced by the RTD under low excitation current. Care should be taken to minimize thermocouple effects by preventing significant thermal gradients between the two op amp inputs. It is also important to choose feedback and series resistors that are low-tempco to minimize error due to drift over the entire temperature range. OUT C2 10µF VISHAY PTS SERIES 1kΩ PtRTD, CLASS F0.3 PTS12061B1K00P100 www.vishay.com 110k 0.1% ±2ppm/°C VOUT SCALE 10mV/°C 1V AT 25°C ROOM TEMP ISUPPLY = 43µA 100k RTD 1k 10k 10k R2 11k 100k + OUT LTC2066 – RFB 1.58M 2066 F10 LT5400-3 131:1 VOLTAGE DIVIDER Figure 10. RTD Sensor 20 2066f For more information www.linear.com/LTC2066 LTC2066 APPLICATIONS INFORMATION VIN 4.5V TO 90V RIN 49.9Ω 0.1% ISENSE 100µA to 250mA RSENSE 0.1Ω C1 3.3µF REF LT1389-4.096 R1* 49.9Ω 0.1% – BSP322P M1 LTC2066 + D1 1N4148 LOAD C3 100nF BSP322P M2 R3 499k C4 22µF RLOAD 5k 0.1% VOUT = 10 • ISENSE 1mV TO 2.5V C2 10µF 2066 F11 *R1 CANCELS OUT PARASITIC SEEBECK EFFECT VOLTAGE TO BALANCE +IN AND –IN. Figure 11. High Side Current Sense High Side Current Sense This micropower precision LTC2066 high side current sense circuit draws 10.5µA to 300μA of supply current, depending on VIN, while measuring currents from 100μA to 250mA over a 4.5V to 90V input voltage range. The output of this circuit is: R •R VOUT = LOAD SENSE ISENSE = 10 •ISENSE RIN The LTC2066’s low typical input offset voltage of 1μV and low input bias current of 5pA contribute output errors that are much smaller than the error due to precision limitations of the resistors used. Thus, output accuracy is mainly set by the accuracy of the resistors RSENSE, RIN, and RLOAD. R1 helps cancel out parasitic Seebeck effect voltages at –IN by balancing with an identical voltage at +IN. The LT1389-4.096 reference, along with the bootstrap circuit composed of M2, R3, and D1, establishes a very low power isolated 3.4V rail that protects the LTC2066 from reaching its absolute maximum voltage of 5.5V while allowing for much higher input voltages. Since the LTC2066’s gain-bandwidth product is 100kHz, it is recommended to use this circuit to measure currents that do not change faster than 10kHz. 2066f For more information www.linear.com/LTC2066 21 LTC2066 PACKAGE DESCRIPTION Please refer to http://www.linear.com/product/LTC2066#packaging for the most recent package drawings. SC6 Package 6-Lead Plastic SC70 (Reference LTC DWG # 05-08-1638 Rev B) 0.47 MAX 0.65 REF 1.80 – 2.20 (NOTE 4) 1.00 REF INDEX AREA (NOTE 6) 1.80 – 2.40 1.15 – 1.35 (NOTE 4) 2.8 BSC 1.8 REF PIN 1 RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.10 – 0.40 0.65 BSC 0.15 – 0.30 6 PLCS (NOTE 3) 0.80 – 1.00 1.00 MAX 0.00 – 0.10 REF GAUGE PLANE 0.15 BSC 0.26 – 0.46 0.10 – 0.18 (NOTE 3) SC6 SC70 1205 REV B NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. DETAILS OF THE PIN 1 IDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE INDEX AREA 7. EIAJ PACKAGE REFERENCE IS EIAJ SC-70 8. JEDEC PACKAGE REFERENCE IS MO-203 VARIATION AB 22 2066f For more information www.linear.com/LTC2066 LTC2066 PACKAGE DESCRIPTION Please refer to http://www.linear.com/product/LTC2066#packaging for the most recent package drawings. S5 Package 5-Lead Plastic TSOT-23 (Reference LTC DWG # 05-08-1635) 0.62 MAX 0.95 REF 2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 3.85 MAX 2.62 REF 2.80 BSC 1.50 – 1.75 (NOTE 4) PIN ONE RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 – 0.45 TYP 5 PLCS (NOTE 3) 0.95 BSC 0.80 – 0.90 0.20 BSC 0.01 – 0.10 1.00 MAX DATUM ‘A’ 0.30 – 0.50 REF 0.09 – 0.20 (NOTE 3) NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 1.90 BSC S5 TSOT-23 0302 2066f Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license grantedinformation by implication or otherwise under any patent or patent rights of Analog Devices. Foris more www.linear.com/LTC2066 23 LTC2066 TYPICAL APPLICATION Battery Powered Current Sense Amplifier Floats with Sense Resistor Voltage IN BAT >3.1V 12V LT6656-3 10µF 2M 2M 14k ILOAD CURRENT TO BE MEASURED (BI-DIRECTIONAL) RSENSE 10mΩ OUT 14k 10µF 2M 2M VREF + LTC2066 – VOUT = VREF/2 ±ILOAD × RSENSE × GAIN GAIN = 2M/14k 2M 2066 TA03 0.1% RESISTORS TO MAINTAIN OFFSET ACCURACY RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1494/LT1495/ LT1496 1.5μA Max, Over-The-Top Precision Rail-to-Rail 375µV VOS, 1.5µA IS, 2.2V to 36V VS, 2.7kHz, RRIO Input and Output Op Amps LT6003/LT6004/ LT6005 1.6V, 1μA Precision Rail-to-Rail Input and Output Op Amps 500µV VOS, 1μA IS, 1.6V to 16V VS, 2kHz, RRIO LTC2063 2µA, Low IB, Zero-Drift Operational Amplifier 5µV VOS, 2µA IS, 2.7V to 5.25V VS, 20kHz, RRIO ADA4051 Micropower, Single/Dual, Zero-Drift Operational 15µV VOS, 17µA IS, 1.8V to 5.5V VS, 115kHz, RRIO Amplifier LT6023 Micropower, Enhanced Slew Op Amp LTC2054/LTC2055 Micropower, Single/Dual, Zero-Drift Operational 5µV VOS, 130μA IS, 2.7V to 11V VS, 500kHz, RR Output Amplifier LTC2057/ LTC2057HV High Voltage-Low Noise Zero-Drift Operational Amplifier 4µV VOS, 1.2mA IS, 4.75V to 60V VS, 1.5MHz, RR Output LTC2050/ LTC2050HV Zero-Drift Operational Amplifier 3µV VOS, 1.5mA IS, 2.7V to 12V VS, 3MHz, RR Output LTC2051/LTC2052 Dual/Quad, Zero-Drift Operational Amplifier 3µV VOS, 1.5mA IS, 2.7V to 12V VS, 3MHz, RR Output LTC2053 Precision, Rail-to-Rail, Zero-Drift, ResistorProgrammable Instrumentation Amplifier 10µV VOS, 1.3mA IS, 2.7V to 12V VS, 200kHz, RRIO LT5400 Quad Matched Resistor Network 0.01% Matching, 8ppm/°C Temp Drift , 0.2ppm/°C Temp Matching 20μV VOS, 20μA IS, 3V to 30V VS, 40kHz AD7170 12-Bit Low Power ∑-∆ ADC 130µA in Conversion Mode, 5µA in Shutdown LTC5800 SmartMesh® Wireless Sensor Network IC Wireless Mesh Networks LT6656 850nA Precision Voltage Reference 850nA, 10ppm/°C Temp Drift, 0.05% Accuracy, SOT-23 Package 24 2066f LT 1117 • PRINTED IN USA For more information www.linear.com/LTC2066 www.linear.com/LTC2066 ANALOG DEVICES, INC. 2017