Preliminary HT2121-15A GaN Hybrid Power Amplifier Product Features Applications • GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • 2W Average Output Power • RF Sub-Systems • Base Station • Repeater • LTE system Package Type : NP-1E Description The HT2121-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 2110 ~ 2170MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN Frequency Range MHz Power Gain Gain Flatness dB Input Return Loss TYP MAX CONDITION 2110 - 2170 ZS = ZL = 50 ohm 31.5 33 34.5 - 0.8 - -6 -10 - Amp : Idq1 = 47mA Idq2 = 103mA Pout @ Average dBm - 33 - Pout @ Psat dBm 40.5 42 - Pulse Width=20us, Duty10% ACLR* @ BW 10MHz LTE (PAPR 7.5dB) - -36 -33 Non DPD dBc - -55 - With DPD Drain Efficiency % - 24.5 - Ids mA - 290 - V - -3.0 -2.0 Gate Bias (Vgs1 and Vgs2) V - 28 - Main Bias(Vds) Pout @ Average Supply Voltage Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF 2. HT Series have internal DC blocking capacitors at the RF input and output ports Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 4.8 - Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 1/7 Version 0.4 Preliminary GaN Hybrid Power Amplifier HT2121-15A Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs1 Vgs2 Drain-Source Voltage V 50 Vds Gate Current mA 5.7 Ig Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -30 ~ 85 TC Storage Temperature °C -40 ~ 100 TSTG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 28 - Vds Gate Voltage (on-stage) V - Vgs1@Idq1 -2 Vgs 1 Gate Voltage (on-stage) V - Vgs2@Idq2 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Block Diagram Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 2/7 Version 0.4 Preliminary GaN Hybrid Power Amplifier HT2121-15A Application Circuit Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 3/7 Version 0.4 Preliminary HT2121-15A GaN Hybrid Power Amplifier Performance Charts * Bias condition @ Idq1= 47mA, Idq2= 103mA, Vds =+28V, Ta=25℃ Psat vs. Frequency 35 44 34 43 33 42 Psat [dBm] 32 31 30 2.11 40 Power Gain @Pin=0dBm 2.12 2.13 2.14 2.15 2.16 41 Psat @Pulse Width 20us (Duty 10%) 39 2.11 2.17 2.12 ACLR vs. Frequency 2.14 -36 2.16 2.17 500 60 450 50 400 40 350 30 300 20 Ids[mA] -37 -38 -39 -40 2.11 Ids 250 ACLR @LTE 10MHz(PAR 7.5dB) 10 Efficiency 0 200 2.12 2.13 2.14 2.15 2.16 30 2.17 31 32 Input Power vs. Pout 34 35 36 ACLR vs. Pout -30 3 -32 1 -34 ACLR [dBc] 5 -1 -3 33 Output Power[dBm] Frequency[GHz] Input Power [dBm] 2.15 Ids vs. Efficiency vs. Pout -35 ACLR [dBc] 2.13 Frequency[GHz] Frequency[GHz] Efficiency[%] Power Gain [dB] Power Gain vs. Frequency -36 -38 Output Power @LTE 10MHz(PAR 7.5dB) ACLR @LTE 10MHz(PAR 7.5dB) -40 -5 30 31 32 33 34 35 30 36 Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] 31 32 33 34 35 36 Output Power[dBm] Output Power[dBm] All specifications may change without notice 4/7 Version 0.4 Preliminary HT2121-15A GaN Hybrid Power Amplifier Package Dimensions (Type: NP-1E) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function 1 RF Input 4 Vgs1 8 GND 11 GND 2 GND 5 Vds 9 GND 12 GND 3 GND 6 Vgs2 10 RF Output 13 GND - - 7 Vds - - 14 GND Recommended Pattern Recommended Pattern Detail ‘A’ Detail Pattern ‘A’ * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 5/7 Version 0.4 Preliminary GaN Hybrid Power Amplifier HT2121-15A Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram - Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 6/7 Version 0.4 Preliminary GaN Hybrid Power Amplifier HT2121-15A Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile Ordering Information Part Number Package Design -R (Reel) HT2121-15A -B (Bulk) -EVB (Evaluation Board) Revision History Part Number Release Date Version Modification Data Sheet Status HT2121-15A 2012.12.27 0.4 Changed Frequency & Model Number Preliminary HT2008-15A 2012.11.21 0.3 Changed Document Preliminary HT2008-15A 2012.09.10 0.2 Changed Quiescent current Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078. Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 7/7 Version 0.4