RFHIC HT2121-15A Ht2121-15a Datasheet

Preliminary
HT2121-15A
GaN Hybrid Power Amplifier
Product Features
Applications
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• 2W Average Output Power
• RF Sub-Systems
• Base Station
• Repeater
• LTE system
Package Type : NP-1E
Description
The HT2121-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 2110 ~ 2170MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
Frequency Range
MHz
Power Gain
Gain Flatness
dB
Input Return Loss
TYP
MAX
CONDITION
2110
-
2170
ZS = ZL = 50 ohm
31.5
33
34.5
-
0.8
-
-6
-10
-
Amp : Idq1 = 47mA
Idq2 = 103mA
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.5
42
-
Pulse Width=20us, Duty10%
ACLR* @ BW 10MHz
LTE (PAPR 7.5dB)
-
-36
-33
Non DPD
dBc
-
-55
-
With DPD
Drain Efficiency
%
-
24.5
-
Ids
mA
-
290
-
V
-
-3.0
-2.0
Gate Bias (Vgs1 and Vgs2)
V
-
28
-
Main Bias(Vds)
Pout @ Average
Supply Voltage
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF
2. HT Series have internal DC blocking capacitors at the RF input and output ports
Mechanical Specifications
PARAMETER
UNIT
TYP
REMARK
Mass
g
2
-
Dimension
㎜
20.5 x 15 x 4.8
-
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
All specifications may change without notice
1/7
Version 0.4
Preliminary
GaN Hybrid Power Amplifier
HT2121-15A
Absolute Maximum Ratings
PARAMETER
UNIT
RATING
SYMBOL
Gate-Source Voltage
V
-10 ~ 0
Vgs1
Vgs2
Drain-Source Voltage
V
50
Vds
Gate Current
mA
5.7
Ig
Operating Junction Temperature
°C
225
TJ
Operating Case Temperature
°C
-30 ~ 85
TC
Storage Temperature
°C
-40 ~ 100
TSTG
Operating Voltages
PARAMETER
UNIT
MIN
TYP
MAX
SYMBOL
Drain Voltage
V
-
28
-
Vds
Gate Voltage (on-stage)
V
-
Vgs1@Idq1
-2
Vgs 1
Gate Voltage (on-stage)
V
-
Vgs2@Idq2
-2
Vgs 2
Gate Voltage (off-stage)
V
-
-8
-
Vgs 1
Gate Voltage (off-stage)
V
-
-8
-
Vgs 2
Block Diagram
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
All specifications may change without notice
2/7
Version 0.4
Preliminary
GaN Hybrid Power Amplifier
HT2121-15A
Application Circuit
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
All specifications may change without notice
3/7
Version 0.4
Preliminary
HT2121-15A
GaN Hybrid Power Amplifier
Performance Charts
* Bias condition @ Idq1= 47mA, Idq2= 103mA, Vds =+28V, Ta=25℃
Psat vs. Frequency
35
44
34
43
33
42
Psat [dBm]
32
31
30
2.11
40
Power Gain
@Pin=0dBm
2.12
2.13
2.14
2.15
2.16
41
Psat @Pulse Width
20us (Duty 10%)
39
2.11
2.17
2.12
ACLR vs. Frequency
2.14
-36
2.16
2.17
500
60
450
50
400
40
350
30
300
20
Ids[mA]
-37
-38
-39
-40
2.11
Ids
250
ACLR @LTE
10MHz(PAR 7.5dB)
10
Efficiency
0
200
2.12
2.13
2.14
2.15
2.16
30
2.17
31
32
Input Power vs. Pout
34
35
36
ACLR vs. Pout
-30
3
-32
1
-34
ACLR [dBc]
5
-1
-3
33
Output Power[dBm]
Frequency[GHz]
Input Power [dBm]
2.15
Ids vs. Efficiency vs. Pout
-35
ACLR [dBc]
2.13
Frequency[GHz]
Frequency[GHz]
Efficiency[%]
Power Gain [dB]
Power Gain vs. Frequency
-36
-38
Output Power @LTE
10MHz(PAR 7.5dB)
ACLR @LTE
10MHz(PAR 7.5dB)
-40
-5
30
31
32
33
34
35
30
36
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
31
32
33
34
35
36
Output Power[dBm]
Output Power[dBm]
All specifications may change without notice
4/7
Version 0.4
Preliminary
HT2121-15A
GaN Hybrid Power Amplifier
Package Dimensions (Type: NP-1E)
* Unit: mm[inch] | Tolerance: ±0.15[.006]
▲ Top View
▲ Side View
▲ Bottom View
Pin Description
Pin No Function Pin No Function Pin No
Function Pin No Function
1
RF Input
4
Vgs1
8
GND
11
GND
2
GND
5
Vds
9
GND
12
GND
3
GND
6
Vgs2
10
RF Output
13
GND
-
-
7
Vds
-
-
14
GND
Recommended Pattern
Recommended Pattern Detail ‘A’
Detail Pattern ‘A’
* Mounting Configuration Notes
1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat.
2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws
be added near the heatsink to mount the board
3. In designing the necessary RF trace, width will depend upon the PCB material and construction.
4. Use 1 oz. Copper minimum thickness for the heatsink.
5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink
6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
All specifications may change without notice
5/7
Version 0.4
Preliminary
GaN Hybrid Power Amplifier
HT2121-15A
Precautions
This product is a Gallium Nitride Transistor.
The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are
applied in accordance to the Sequence during Turn-On and Turn-Off.
The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and
negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier.
The required sequence for power supply is as follows.
During Turn-On
1. Connect GND.
2. Apply Vgs1 and Vgs2.
3. Apply Vds.
4. Apply the RF Power.
During Turn-Off
1. Turn off RF power.
2. Turn off Vds, and then, turn off the Vgs1 and Vgs2.
3. Remove all connections.
Turn On
Turn Off
- Sequence Timing Diagram -
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
All specifications may change without notice
6/7
Version 0.4
Preliminary
GaN Hybrid Power Amplifier
HT2121-15A
Reflow Profile
* Reflow oven settings
Zone
A
B
C
D
E
F
Temperature(°C)
30 ~ 150 ℃
150 ~ 180 ℃
180 ~ 220 ℃
220 ~ 220 ℃
235 ~ 240 ℃
2 ~ 6 ℃/ Sec Drop
Belt speed
55 ~ 115 sec
55 ~ 75 sec
30 ~ 50 sec
30 ~ 50 sec
5 ~ 10 sec
60 ~ 90 sec
* Measured reflow profile
Ordering Information
Part Number
Package Design
-R (Reel)
HT2121-15A
-B (Bulk)
-EVB (Evaluation Board)
Revision History
Part Number
Release Date
Version
Modification
Data Sheet Status
HT2121-15A
2012.12.27
0.4
Changed Frequency & Model Number
Preliminary
HT2008-15A
2012.11.21
0.3
Changed Document
Preliminary
HT2008-15A
2012.09.10
0.2
Changed Quiescent current
Preliminary
RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly
examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume
any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages.
RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or
sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees,
representatives and distributors harmless against any and all claims arising out of such unauthorized use.
Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
All specifications may change without notice
7/7
Version 0.4
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