Eudyna F0100404B 3.3v/5v 1.25 gb/s receiver transimpedance amplifier Datasheet

02.08.06
♦ Features
F0100404B
3.3V/5V 1.25 Gb/s Receiver
• +3.3V or +5.0 V single power supply
• transimpedance 600 Ω (50 Ω load)
• Typical 2200 MHz broad bandwidth
• 16 dB high gain
• Over 20 dB wide dynamic range
• Differential output
• Excellent equivalent input noise current
of 9 pA/√Hz
Transimpedance Amplifier
♦ Applications
• G bit Ethernet (1.25 Gb/s)
• Preamplifier of an optical receiver circuit for fiber channel (1.0625 Gb/s)
♦ Functional Description
The F0100404B is a stable GaAs integrated transimpedance amplifier capable of 16 dB
gain at a typical 1900 MHz 3 dB-cutoff-frequency, making it ideally suited for an optical
receiver circuit for a Gbit Ethernet (1.25 Gb/s), instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation.
The F0100404B typically specifies a high transimpedance of 600 Ω (RL=50 Ω) with a wide
dynamic range of over 20 dB. Furthermore, it can operate with a supply voltage of single
+3.3V or +5.0 V. It features a typical dissipation current of 43 mA.
Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance
owing to parasitic capacitance of the package.
F0100404B
1.25Gb/s Transimpedance Amplifier
♦ Absolute Maximum Ratings
Ta=25 °C, unless specified
Parameter
Symbol
Value
Units
VDD3.3
VSS-0.5 to VSS+4.0
V
VDD5.0
VSS-0.5 to VSS+7.0
V
Supply Current
IDD
65
mA
Ambient Operating Temperature
Ta
-40 to +90
°C
Storage Temperature
Tstg
-55 to +125
°C
Supply Voltage
♦ Recommended Operating Conditions
Ta=25 °C, VSS=GND, unless specified
Value
Parameter
Symbol
Supply Voltage
Units
Min.
Max.
VDD3.3
2.8
3.6
V
VDD5.0
4.5
5.25
V
Ta
0
85
°C
Ambient Operating Temperature
♦ Electrical Characteristics
Ta=25 °C, VDD=3.3V, VSS=GND, unless specified
Value
Parameter
Supply Current
Symbol
Test Conditions
Units
Min.
Typ.
Max.
IDD
DC
29
43
60
mA
Gain(Positive) *1
S21P
PIN=-50dBm f=1MHz,
RL=50Ω
13.0
16.0
21.0
dB
Gain(negative) *1
S21N
PIN=-50dBm f=1MHz,
RL=50Ω
13.0
16.0
21.0
dB
High Frequency Cut-off
(positive) *1
FCP
PIN=-50dBm RL=50Ω
1.25
1.9
3
GHz
High Frequency Cut-off
(negative) *1
FCN
PIN=-50dBm RL=50Ω
1.25
1.7
3
GHz
Input Impedance
RI
f=1MHz
80
95
160
Ω
Trans-Impedance(positive) *1,*2
ZTP
f=1MHz
450
600
-
Ω
Trans-Impedance(negative) *1,*2
ZTN
f=1MHz
450
625
-
Ω
Output Voltage(positive) *1
VOP
DC
1.4
1.7
2.4
V
Output Voltage(negative) *1
VON
DC
1.5
2.0
2.5
V
Input Voltage
VIN
DC
0.75
0.9
1.15
V
3.3 V Terminal Voltage *3
V33
DC
2.8
-
3.6
V
S21P,N
20
*1 Defined at OUT and OUT
*2 ZTP,N= RI+50 ×10
2
*3 Voltage of V DD3.3 pad when supplied the voltage(4.50~5.25 V) to VDD5.0 pad
F0100404B
1.25Gb/s Transimpedance Amplifier
♦ Block Diagram
VDD5.0
VDD3.3
OUT
OUT
Level
Shift
Buffer
OUTB
IN
VSS
OUTB
♦ Die Pad Description
VDD3.3
Power Supply
VDD5.0
Power Supply
VSS
Power Supply
IN
Input
OUT
Output
OUTB
Output
F0100404B
1.25Gb/s Transimpedance Amplifier
♦ Die Pad Assignments
(12)
(10)
(11)
(9)
(8)
(13)
(7)
(14)
(6)
(5)
(1)
(2)
No.
Symbol
(3)
Center Coordinates(µm)
No.
(4)
Symbol
Center Coordinates(µm)
(1)
VDD3.3
(75,155)
(10)
VSS
(395,715)
(2)
VDD5.0
(315,75)
(11)
VDD3.3
(235,715)
(3)
OUTB
(555,75)
(12)
VDD3.3
(75,715)
(4)
VSS
(715,75)
(13)
VSS
(75,555)
(5)
OUTB
(715,235)
(14)
IN
(75,395)
(6)
VSS
(715,395)
(7)
OUT
(715,555)
(8)
VSS
(715,715)
O
(0,0)
(9)
OUT
(555,715)
A
(790,790)
F0100404B
1.25Gb/s Transimpedance Amplifier
♦ Test Circuits
1) AC Characteristics
Network Analyzer
50Ω
Pin=-50 dBm
f=300 kHz~3 GHz
VDD
IN
50Ω
OUT
DUT
Switch
VSS
OUT
50Ω
Prober
2) Sensitivity Characteristics
VPD
5V
0.022µF
E/O
Converter
Pulse
Pattern
Generator
Optical
Attenuater
VCC
PD
DUT
CLK
0.022µF
Comparator
SEI
F0311018S
Bit Error
Rate Tester
5V
0.022µF
F0100404B
1.25Gb/s Transimpedance Amplifier
♦ Examples of AC Characteristics
(1) Gain (S21P)
Ta=25 °C, VDD=+5.0 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz
24
21
18
S21(dB)
15
12
9
6
3
0
1M
10M
100M
1G
f(Hz)
(2) Gain (S21N)
Ta=25 °C, VDD=+5.0 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz
24
21
18
S21(dB)
15
12
9
6
3
0
1M
10M
100M
f(Hz)
1G
F0100404B
1.25Gb/s Transimpedance Amplifier
(3) Input Noise Current Density & Transimpedance
INPUT NOISE CURRENT DENSITY & TRANSIMPEDANCE(Typical Vaiues)
Freq. (MHz)
Zt(Ω)
(RF transimpedance)
Ini(pA/√Hz)
(Equivalent input noise currentdensity)
10
683
9.68
20
682
8.96
30
679
9.29
50
663
8.08
80
656
8.72
100
649
8.60
200
652
9.07
300
642
8.54
400
649
8.25
500
641
8.68
600
662
8.90
700
663
10.80
800
670
10.60
900
685
10.30
1000
685
8.96
F0100404B
1.25Gb/s Transimpedance Amplifier
♦ Typical Bit Error Rate
DATA RATE: 1.25 Gb/s
PRBS 223-1, Ta=25 °C, VDD=+5.0 V, VSS=GND, RL=50 Ω
10 -3
-1.2 10 0
3.0V
3.3V
3.6V
0
-1.3 10
10 -4
Bit Error Ratio
-1.4 10 0
10 -5
-1.5 10 0
100-6
-1.6 10
10 -7
-1.7 10 0-8
10
-1.8 10
100-9
10 -10
0
-1.9 10
10 -11
10 -12
-30
-29
-28
-27
-26
-25
-24
-23
Optical Input Power (dBm)
-22
1.25Gb/s Transimpedance Amplifier
F0100404B
♦ General Description
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint
photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter
descriptions can not always be achieved according to the employed PD and package, the
assembling design, and other technical experts. This is the major reason that there is no
product lineup of packaged transimpedance amplifiers.
Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully.
Hardness to electro-magnetic interference and fluctuation of a power supply voltage is
also an important point of the design, because very faint photo-current flows into the
transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration.
♦ Recommendation
SEI basically recommends the F08 series PINAMP modules for customers of the
transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise
filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having
typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the
F01 series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve
troublesome design issues and to shorten the development lead time.
♦ Noise Performance
The F0100404B based on GaAs FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often
demand superior signal-to-noise ratio, that is, high sensitivity; the F0100404B is the best
choice for such applications.
The differential circuit configuration in the output enable a complete differential operation
to reduce common mode noise: simple single ended output operation is also available.
1.25Gb/s Transimpedance Amplifier
F0100404B
♦ Die-Chip Description
The F0100404B is shipped like the die-chip described above. The die thickness is
typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95
µm square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
♦ Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C
gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic
wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective.
♦ Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of
quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand,
the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7.
♦ Precautions
Owing to their small dimensions, the GaAs FET’s from which the F0100404B is designed
are easily damaged or destroyed if subjected to large transient voltages. Such transients
can be generated by power supplies when switched on if not properly decoupled. It is also
possible to induce spikes from static-electricity-charged operations or ungrounded equipment.
Electron Device Department
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