BLS7G3135L-350P;
BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 3 — 29 October 2013
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
3.1
32
350
12
43
5
5
3.3
32
350
12
43
5
5
3.5
32
350
10
39
5
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLS7G3135L-350P (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
[1]
source
V\P
BLS7G3135LS-350P (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
[1]
V\P
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLS73135L-350P
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
BLS73135LS-350P
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+11
V
Tstg
storage temperature
65
+150
C
-
225
C
Tj
[1]
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
junction temperature
[1]
Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
2 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Zth(j-mb)
Conditions
Typ
Unit
0.1
K/W
tp = 100 s; = 20 %
0.09
K/W
tp = 100 s; = 10 %
0.07
K/W
tp = 200 s; = 10 %
0.09
K/W
transient thermal impedance from junction to Tcase = 85 C; PL = 350 W
mounting base
tp = 300 s; = 10 %
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.2 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 220 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
39
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 11 A
-
16.2
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 7.7 A
-
0.065
-
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
3 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 200 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
At frequency of 3.1 GHz
Gp
power gain
PL = 350 W
10.5
12
-
dB
RLin
input return loss
PL = 350 W
-
6
-
dB
D
drain efficiency
PL = 350 W
38
43
-
%
Pdroop(pulse)
pulse droop power
PL = 350 W
-
0.2
0.3
dB
tr
rise time
PL = 350 W
-
5
50
ns
tf
fall time
PL = 350 W
-
5
50
ns
At frequency of 3.3 GHz
Gp
power gain
PL = 350 W
10.5
12
-
dB
RLin
input return loss
PL = 350 W
-
6
-
dB
D
drain efficiency
PL = 350 W
38
43
-
%
Pdroop(pulse)
pulse droop power
PL = 350 W
-
0.2
0.3
dB
tr
rise time
PL = 350 W
-
5
50
ns
tf
fall time
PL = 350 W
-
5
50
ns
At frequency of 3.5 GHz
Gp
power gain
PL = 320 W
8.5
10
-
dB
RLin
input return loss
PL = 320 W
-
9
-
dB
D
drain efficiency
PL = 320 W
35
39
-
%
Pdroop(pulse)
pulse droop power
PL = 320 W
-
0.2
0.3
dB
tr
rise time
PL = 320 W
-
5
50
ns
tf
fall time
PL = 320 W
-
5
50
ns
7. Application information
7.1 Ruggedness in class-AB operation
The BLS7G3135L-350P and the BLS7G3135LS-350P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 s; = 10 %
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
4 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values unless otherwise specified.
f
ZS[1]
ZL[1]
(GHz)
()
()
3.1
1.8 7.2j
3.6 6.3j
3.2
1.6 7.1j
4.4 6.7j
3.3
2.2 8.2j
4.8 5.8j
3.4
3.1 9.7j
5.7 6.2j
3.5
3.6 11.6j
6.5 4.6j
[1]
Impedances are taken at a single half of the push-pull transistor.
GUDLQ
JDWH
=6
=/
JDWH
GUDLQ
Fig 1.
DDN
Definition of transistor impedance
7.3 Test circuit information
PP
PP
5
& &
&
&
& &
PP
&
&
& &
&
5
&
&
&
DDD
Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm;
thickness copper plating = 35 m
See Table 9 for a list of components.
Fig 2.
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
Test circuit layout
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
5 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
Table 9.
List of components
For test circuit see Figure 2.
Component
Description
Value
Remarks
C1, C2, C3
multilayer ceramic chip capacitor
8.2 pF
ATC100A
C4, C5, C11
multilayer ceramic chip capacitor
15 pF
ATC800B
C6, C7
multilayer ceramic chip capacitor
100 pF
ATC800A
C8, C9
multilayer ceramic chip capacitor
1 F, 50 V
TDK
TDK
C10, C12
multilayer ceramic chip capacitor
10 F, 50 V
C13, C14
electrolytic capacitor
220 F, 63 V
R1, R2
SMD resistor
10
7.4 Graphical data
DDD
*S
G%
*S
DDD
Ș'
*S
G%
Ș'
Ș'
3/ G%P
VDS = 32 V; IDq = 200 mA.
Ș'
(2) f = 3300 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
(3) f = 3500 MHz
Power gain and drain efficiency as function of
output power; typical values
Product data sheet
3/ :
VDS = 32 V; IDq = 200 mA.
(1) f = 3100 MHz
BLS7G3135L-350P_7G3135LS-350P
(1) f = 3100 MHz
Fig 3.
*S
Fig 4.
Power gain and drain efficiency as function of
output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
6 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
DDD
3/
:
DDD
Ș'
3L :
I 0+]
VDS = 32 V; IDq = 200 mA; tp =300 s; = 10 %.
VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %;
PL = 350 W.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 5.
Output power as a function of input power;
typical values
DDD
*S
G%
Fig 7.
Fig 6.
Drain efficiency as a function of frequency;
typical values
DDD
5/LQ
G%
I 0+]
I 0+]
VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %;
PL = 350 W.
VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %;
PL = 350 W.
Power gain as a function of frequency; typical
values
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
Fig 8.
Input return loss as a function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
7 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
8. Package outline
)ODQJHGEDODQFHGFHUDPLFSDFNDJHPRXQWLQJKROHVOHDGV
627$
'
$
)
'
8
%
T
&
Z 0 & 0
+
F
(
S
+ 8
/
$
(
Z 0 $ 0 % 0
Z 0
E
4
H
PP
VFDOH
',0(16,216 PLOOLPHWUHGLPHQVLRQVDUHGHULYHGIURPWKHRULJLQDOLQFKGLPHQVLRQV
81,7
$
PP
LQFKHV
E
F
'
'
H
(
(
+
)
+
/
S
4
T
8
8
Z
Z
Z
1RWH
PLOOLPHWHUGLPHQVLRQVDUHGHULYHGIURPWKHRULJLQDOLQFKGLPHQVLRQV
UHFRPPHQGHGVFUHZSLWFKGLPHQVLRQRILQFK PP EDVHGRQ0VFUHZ
287/,1(
9(56,21
5()(5(1&(6
,(&
-('(&
(,$-
,668('$7(
627$
Fig 9.
(8523($1
352-(&7,21
Package outline SOT539A
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
8 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
(DUOHVVIODQJHGEDODQFHGFHUDPLFSDFNDJHOHDGV
627%
'
$
)
'
'
8
+
Z
F
'
(
8
+
(
/
Z
E
4
H
PP
VFDOH
'LPHQVLRQV
8QLW Z
Z
PD[ LQFKHV QRP
PLQ PP
PD[
QRP
PLQ
$
E
F
'
'
(
(
H
)
+
+
/
4
8
8
1RWH
PLOOLPHWHUGLPHQVLRQVDUHGHULYHGIURPWKHRULJLQDOLQFKGLPHQVLRQV
2XWOLQH
YHUVLRQ
5HIHUHQFHV
,(&
-('(&
-(,7$
VRWEBSR
(XURSHDQ
SURMHFWLRQ
,VVXHGDWH
627%
Fig 10. Package outline SOT539B
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
9 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
S-Band
Short wave band
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLS73135L-350P_7G3135LS-350P v.3
20131029
Product data sheet
-
BLS73135L-350P_
7G3135LS-350P v.2
Modifications
•
•
•
•
Table 1 on page 1: table updated
Table 6 on page 3: table updated
Table 7 on page 4: table updated
Section 7.4 on page 6: 4 graphs added
BLS73135L-350P_7G3135LS-350P v.2
20130801
Objective data sheet
-
BLS73135L-350P_
7G3135LS-350P v.1
BLS73135L-350P_7G3135LS-350P v.1
20121012
Objective data sheet
-
-
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
10 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
11 of 13
BLS7G3135L(S)-350P
NXP Semiconductors
LDMOS S-band radar power transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
12 of 13
NXP Semiconductors
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 5
Test circuit information . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 October 2013
Document identifier: BLS7G3135L-350P_7G3135LS-350P