To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-8A FL14KM-8A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-8A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 400V ● rDS (ON) (MAX) .............................................................. 0.55Ω ● ID ......................................................................................... 14A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION SMPS, Inverter fluorescent light sets, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 400 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V ±30 14 42 V A A IDA PD Tch Tstg Viso Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200µH 14 35 –55 ~ +150 –55 ~ +150 2000 A W °C °C V Weight Typical value 2.0 g — Parameter Conditions AC for 1minute, Terminal to case Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-8A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 400 ±30 — — — — — — ±10 V V µA VDS = 400V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V — 2.0 — — — 3.0 0.42 2.94 1 4.0 0.55 3.85 mA V Ω V — — — — 8.5 1100 150 25 — — — — S pF pF pF — — — — 20 40 130 70 — — — — ns ns ns ns — 1.5 2.0 V — — 3.57 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 7 5 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 100µs 101 1ms 7 5 10ms 3 2 100ms 100 7 5 3 2 TC = 25°C Single Pulse 10–1 0 50 100 150 7 200 DC 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 16 TC = 25°C Pulse Test 12 8V 5V 8 4 PD = 35W DRAIN CURRENT ID (A) 6V 10V VGS = 20V 6V 10V 8V TC = 25°C Pulse Test 8 5V 6 4 PD = 35W 2 4V 4V 0 0 5 CASE TEMPERATURE TC (°C) 20 DRAIN CURRENT ID (A) tw = 10µs 3 2 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-8A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 16 ID = 21A 12 8 14A 4 0 1.0 TC = 25°C Pulse Test 7A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.8 0.6 VGS = 10V 0.4 20V 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 20 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 12 8 4 0 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 7 5 75°C 3 2 125°C 100 7 5 VDS = 10V Pulse Test 10–1 0 10 20 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 7 5 3 2 3 Ciss 103 7 5 3 2 Coss 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C 101 3 2 104 101 3 2 2 td(off) 102 tf tr 7 5 3 td(on) 2 101 7 5 100 TCh = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-8A HIGH-SPEED SWITCHING USE SOURCE CURRENT IS (A) VDS = 100V 16 200V 300V 12 8 4 TCh = 25°C ID = 14A 0 20 40 60 80 12 8 4 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 125°C GATE CHARGE Qg (nC) VGS = 10V 7 ID = 7A 5 Pulse Test 1.4 TC = 25°C 75°C 0 101 10–1 VGS = 0V Pulse Test 16 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 20 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 0.05 10–1 0.02 0.01 7 5 3 2 PDM tw Single Pulse T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001