ON MMBT2222LT3G General purpose transistor Datasheet

MMBT2222L, MMBT2222AL,
SMMBT2222AL
General Purpose Transistors
NPN Silicon
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Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
•
•
Compliant
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
VCEO
Collector −Base Voltage
VCBO
MMBT2222L
MMBT2222AL, SMMBT2222AL
MMBT2222L
MMBT2222AL, SMMBT2222AL
Emitter −Base Voltage
MMBT2222L
MMBT2222AL, SMMBT2222AL
Collector Current − Continuous
Collector Current − Peak (Note 3)
VEBO
Value
Unit
Vdc
30
40
Vdc
60
75
3
1
2
SOT−23
CASE 318
STYLE 6
Vdc
5.0
6.0
IC
600
mAdc
ICM
1100
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD
RqJA
PD
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 10
1
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
MMBT2222LT1/D
MMBT2222L, MMBT2222AL, SMMBT2222AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
−
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
−
−
Vdc
−
10
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A, SMMBT2222A
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222
MMBT2222A, SMMBT2222A
MMBT2222
MMBT2222A, SMMBT2222A
ICBO
−
−
−
−
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A, SMMBT2222A
IEBO
−
100
nAdc
IBL
−
20
nAdc
35
50
75
35
100
50
30
40
−
−
−
−
300
−
−
−
−
−
0.4
0.3
−
−
1.6
1.0
−
0.6
1.3
1.2
−
−
2.6
2.0
250
300
−
−
−
8.0
−
−
30
25
2.0
0.25
8.0
1.25
−
−
8.0
4.0
50
75
300
375
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A
ICEX
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 4)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 4)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
MMBT2222A only
MMBT2222
MMBT2222A, SMMBT2222A
MMBT2222
MMBT2222A, SMMBT2222A
VCE(sat)
MMBT2222
MMBT2222A, SMMBT2222A
MMBT2222
MMBT2222A, SMMBT2222A
VBE(sat)
MMBT2222
MMBT2222A, SMMBT2222A
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 5)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A, SMMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
fT
Cobo
MMBT2222
MMBT2222A, SMMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
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2
Cibo
hie
hre
hfe
MHz
pF
pF
kW
X 10− 4
−
MMBT2222L, MMBT2222AL, SMMBT2222AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
5.0
25
35
200
−
150
−
4.0
Unit
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A, SMMBT2222A
Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
hoe
rb, Cc
NF
mmhos
ps
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
Storage Time
Fall Time
ns
ns
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200
0
0
-2 V
1 kW
1k
-14 V
CS* < 10 pF
< 2 ns
< 20 ns
CS* < 10 pF
1N914
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
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3
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
MMBT2222L, MMBT2222AL, SMMBT2222AL
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
500
Figure 5. Turn −On Time
200
300
500
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
6.0
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −Off Time
10
8.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
4.0
IC = 50 mA
100 mA
500 mA
1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0
50
50 100
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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4
50 k 100 k
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
MMBT2222L, MMBT2222AL, SMMBT2222AL
30
CAPACITANCE (pF)
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3
20 30
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 9. Capacitances
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.1
−55°C
25°C
0.001
0.01
0.1
1.1
1.0
0.9
1
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
+0.5
VCE = 1 V
0
1.0
0.9
COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
70 100
IC/IB = 10
1.2
150°C
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
0.3
0.2
50
1.3
IC/IB = 10
1.1
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Current−Gain Bandwidth Product
1
0.01
2.0
0.001
0.01
0.1
-2.5
1
0.1 0.2
IC, COLLECTOR CURRENT (A)
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
Figure 13. Base Emitter Voltage vs. Collector
Current
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5
500
MMBT2222L, MMBT2222AL, SMMBT2222AL
10
10 ms
100 ms
1
Thermal Limit
IC (A)
1 ms
1s
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
100
VCE (Vdc)
Figure 15. Safe Operating Area
ORDERING INFORMATION
Device
MMBT2222LT1G
MMBT2222ALT1G,
SMMBT2222ALT1G
MMBT2222LT3G
MMBT2222ALT3G,
SMMBT2222ALT3G
Specific Marking Code
Package
Shipping†
M1B
SOT−23
(Pb−Free)
3000 / Tape & Reel
1P
SOT−23
(Pb−Free)
3000 / Tape & Reel
M1B
SOT−23
(Pb−Free)
10,000 / Tape & Reel
1P
SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MMBT2222L, MMBT2222AL, SMMBT2222AL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
HE
E
c
1
2
e
b
0.25
q
A
L
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
MAX
A
0.89
1.00
1.11
0.035
0.040
0.044
A1
0.01
0.06
0.10
0.001
0.002
0.004
b
0.37
0.44
0.50
0.015
0.018
0.020
c
0.09
0.13
0.18
0.003
0.005
0.007
D
2.80
2.90
3.04
0.110
0.114
0.120
E
1.20
1.30
1.40
0.047
0.051
0.055
e
1.78
1.90
2.04
0.070
0.075
0.081
L
0.10
0.20
0.30
0.004
0.008
0.012
0.35
0.54
0.69
0.014
0.021
0.029
L1
HE
2.10
2.40
2.64
0.083
0.094
0.104
q
0°
−−−
10 °
0°
−−−
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT2222LT1/D
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