CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE030N15RJ3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A 150V 28.7A 30 mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol Outline TO-252(DPAK) MTE030N15RJ3 G G：Gate D：Drain S：Source D S Ordering Information Device MTE030N15RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE030N15RJ3 CYStek Product Specification Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current @ L=0.1mH Avalanche Energy @ L=2mH, ID=18A, VDD=50V Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range VDS VGS 150 ±30 28.7 20.3 116 50 324 7.5 75 37.5 -55~+175 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 2 75 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg MTE030N15RJ3 Min. Typ. Max. 150 2 - 30 21.7 4 ±100 1 25 39 - - 35.9 9.5 9.7 20.4 19.8 40.4 8.4 1910 111 15 1 - Unit V nA μA mΩ S Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VGS=±30V, VDS=0V VDS =120V, VGS =0V VDS =120V, VGS =0V, Tj=125°C VGS =10V, ID=20A VDS =10V, ID=20A nC ID=20A, VDS=120V, VGS=10V ns VDS=75V, ID=20A, VGS=10V, RGS=3Ω pF VGS=0V, VDS=75V, f=1MHz Ω f=1MHz CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 0.86 58 143 28.7 116 1.2 - Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 3/9 A V ns nC IS=20A, VGS=0V IF=20A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE030N15RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 ID, Drain Current(A) 90 BVDSS, Normalized Drain-Source Breakdown Voltage 100 10V,9V,8V,7V 80 5.5 V 70 60 5V 50 40 30 4 .5V 20 1.2 1 0.8 ID=250μA, VGS=0V 0.6 4V 10 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=6V, 7V, 10V in descending order 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 0 100 5 10 15 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 200 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 180 ID=20A 160 140 120 100 80 60 40 20 2.4 VGS=10V, ID=20A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 30mΩ typ. 0 0 0 MTE030N15RJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 10 20 30 40 50 60 VDS, Drain-Source Voltage(V) 70 -75 -50 -25 80 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 VDS=30V, 75V, 120V from left to right 8 6 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 20 24 28 32 Total Gate Charge---Qg(nC) 36 40 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 30 RDS(ON) Limited 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 100μs 1ms 10 10ms TC=25°C, Tj=175°C, VGS=10V,RθJC=2°C/W single pulse 1 100ms 1s DC 25 20 15 10 5 VGS=10V, RθJC=2°C/W 0 0.1 0.1 MTE030N15RJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 4000 100 90 VDS=10V Peak Transient Power (W) 3500 80 ID, Drain Current (A) 70 60 50 40 30 20 TJ(MAX) =175°C TC=25°C RθJC=2°C/W 3000 2500 2000 1500 1000 500 10 0 0 1 2 3 4 5 6 7 8 9 10 0 0.0001 0.001 VGS, Gate-Source Voltage(V) 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2 °C/W 0.1 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTE030N15RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE030N15RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE030N15RJ3 CYStek Product Specification Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 E030 N15R Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE030N15RJ3 CYStek Product Specification