MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Rating Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW °C/W Thermal Resistance, Junction-to-Ambient RqJA 618 (Note 1) 403 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 280 (Note 1) 332 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 1 2 SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM 6x M G G 6x = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 10 1 Publication Order Number: MUN5111T1/D MUN5111T1 Series ORDERING INFORMATION AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping† MUN5111T1G SC−70/SOT−323 (Pb−Free) 6A 10 10 3000/Tape & Reel MUN5112T1G SC−70/SOT−323 (Pb−Free) 6B 22 22 3000/Tape & Reel MUN5113T1G SC−70/SOT−323 (Pb−Free) 6C 47 47 3000/Tape & Reel MUN5113T3G SC−70/SOT−323 (Pb−Free) 6C 47 47 10,000/Tape & Reel MUN5113T1G SC−70/SOT−323 (Pb−Free) 6C 47 47 3000/Tape & Reel MUN5114T1G SC−70/SOT−323 (Pb−Free) 6D 10 47 3000/Tape & Reel MUN5115T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6E 10 ∞ 3000/Tape & Reel MUN5116T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6F 4.7 ∞ 3000/Tape & Reel MUN5130T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6G 1.0 1.0 3000/Tape & Reel MUN5131T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6H 2.2 2.2 3000/Tape & Reel MUN5132T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6J 4.7 4.7 3000/Tape & Reel MUN5133T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6K 4.7 47 3000/Tape & Reel MUN5134T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6L 22 47 3000/Tape & Reel MUN5135T1G (Note 3) SC−70/SOT−323 (Pb−Free) 6M 2.2 47 3000/Tape & Reel MUN5136T1G SC−70/SOT−323 (Pb−Free) 6N 100 100 3000/Tape & Reel MUN5137T1G SC−70/SOT−323 (Pb−Free) 6P 47 22 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 VOL 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 VOH 4.9 − − Vdc Input Resistor R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 MUN5111T1/MUN5112T1/MUN5113T1/MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 250 PD , POWER DISSIPATION (MILLIWATTS) Resistor Ratio MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 200 150 100 50 0 -50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 kW MUN5111T1 Series 1000 1 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1 TA=-25°C 0.1 25°C 75°C 0.01 0 VCE = 10 V TA=75°C 25°C 100 10 20 40 IC, COLLECTOR CURRENT (mA) 50 -25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C TA=-25°C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 10 MUN5111T1 Series 1000 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1 IC/IB = 10 1 25°C TA=-25°C 75°C 0.1 0.01 VCE = 10 V TA=75°C 25°C -25°C 100 10 0 20 IC, COLLECTOR CURRENT (mA) 1 50 40 10 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C TA=-25°C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5111T1 Series 1 1000 IC/IB = 10 TA=-25°C h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 -25°C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 15. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN5111T1 Series 180 1 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1 TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 -25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 1 2 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75°C f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C -25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage 10 +12 V VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25°C TA=-25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1 1000 75°C 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25°C −25°C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 75°C 100 25°C 10 1 35 −25°C 0 20 Figure 23. Maximum Collector Voltage versus Collector Current 100 IC, COLLECTOR CURRENT (mA) 9 8 7 6 5 4 3 2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C −25°C 10 25°C 1 0.1 0.01 60 0 1 2 3 4 −25°C 75°C 25°C 0.1 0 5 10 6 7 8 9 10 Figure 26. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 120 Figure 24. DC Current Gain 10 1 0 40 60 80 100 IC, COLLECTOR CURRENT (mA) 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 50 MUN5111T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25°C 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 0.1 TA = −25°C 0.01 0.001 50 Figure 30. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 31. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 29. DC Current Gain 8 0 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 32. Input Voltage versus Output Current http://onsemi.com 10 50 MUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 0.01 75°C 25°C −25°C IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1 1000 75°C TA = −25°C 100 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage versus Collector Current 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C VO = 0.2 V 75°C 0 2 6 7 8 9 10 Figure 36. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25°C 75°C 10 0.1 60 Figure 35. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 34. DC Current Gain 1.2 0 25°C 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 37. Input Voltage versus Output Current http://onsemi.com 11 20 MUN5111T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 38. Maximum Collector Voltage versus Collector Current Figure 39. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) 1.2 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C TA = −25°C 10 25°C 1 0.1 0.01 0.001 60 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 11 Figure 41. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 40. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 f = 1 MHz IE = 0 V TA = 25°C 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 42. Input Voltage versus Output Current http://onsemi.com 12 MUN5111T1 Series PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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