Fujitsu MB82DP02183E-65L 32 mbit mobile fcram 3.0 v, page mode Datasheet

FUJITSU SEMICONDUCTOR
INTRODUCTION SHEET
NP05-11449-2E
32 Mbit Mobile FCRAM
3.0 V, Page Mode
MB82DP02183E-65L
TM
FEATURES
•
•
Pseudo SRAM with Asynchronous SRAM Interface
8 Words Page Read Access Capability
_____
•
•
•
•
______
Byte Control by LB, UB
Low Power Consumption
Various Power Down Mode
Sleep
4 Mbit Partial
8 Mbit Partial
Chip / Wafer Business
MAIN SPECIFICATIONS
Part Number
MB82DP02183E-65L
Organization
2 M Word × 16 bit
Supply Voltage
2.6 V to 3.1 V
Page Address Access Time (Max.)
20 ns
Address Access Time (Max.)
65 ns
Active Current (Max.)
30 mA
Standby Current (Max.)
120 μA
Power Down Current (Max.)
Sleep
10 μA
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
September, 2007
1/1
Copyright©2007 FUJITSU LIMITED All rights reserved
Similar pages