FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11449-2E 32 Mbit Mobile FCRAM 3.0 V, Page Mode MB82DP02183E-65L TM FEATURES • • Pseudo SRAM with Asynchronous SRAM Interface 8 Words Page Read Access Capability _____ • • • • ______ Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial Chip / Wafer Business MAIN SPECIFICATIONS Part Number MB82DP02183E-65L Organization 2 M Word × 16 bit Supply Voltage 2.6 V to 3.1 V Page Address Access Time (Max.) 20 ns Address Access Time (Max.) 65 ns Active Current (Max.) 30 mA Standby Current (Max.) 120 μA Power Down Current (Max.) Sleep 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved