K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 18. 2001 Preliminary 0.1 1. Add x32 org part and industrial temperature part Aug. 11. 2001 Preliminary 0.2 1. change scan order(1) form 4T to 6T at 119BGA(x18) Aug. 28 .2001 Preliminary 1.0 1. Final spec release 2. Change ISB2 form 50mA to 60mA Nov. 16. 2001 Final 2.0 Change ordering information( remove 225MHz at Nt-Pipelined) April. 01. 2002 Final 2.1 1. Delete 119BGA package April. 04. 2003 Final 3.0 1. Remove x32 organization Nov. 17. 2003 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM 8Mb NtRAM(Flow Through / Pipelined) Ordering Information Org. Part Number Mode VDD Speed FT ; Access Time(ns) Pipelined ; Cycle Time(MHz) K7M801825B-QC(I)65/75 FlowThrough 3.3 6.5/7.5 ns K7N801801B-QC(I)16/13 Pipelined 3.3 167/133 MHz Pipelined 3.3 250 MHz Pipelined 2.5 167/133 MHz 512Kx18 K7N801809B-QC(I)25 K7N801845B-QC(I)16/13 K7N801849B-QC(I)25 Pipelined 2.5 250MHz K7M803625B-QC(I)65/75 FlowThrough 3.3 6.5/7.5 ns K7N803601B-QC(I)16/13 Pipelined 3.3 167/133 MHz 256Kx36 K7N803609B-QC(I)25 Pipelined 3.3 250 MHz K7N803645B-QC(I)16/13 Pipelined 2.5 167/133 MHz K7N803649B-QC(I)25 Pipelined 2.5 250 MHz -2- PKG Q: 100TQFP Temp C: Commercial Temperature Range I: Industrial Temperature Range Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM 256Kx32 & 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • Byte Writable Function. • Enable clock and suspend operation. • Single READ/WRITE control pin. • Self-Timed Write Cycle. • Three Chip Enable for simple depth expansion with no data contention . • Α interleaved burst or a linear burst mode. • Asynchronous output enable control. • Power Down mode. • 100-TQFP-1420A • Operating in commercial and industrial temperature range. The K7N803601B and K7N801801B are 9,437,184 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low". Asynchronous inputs include the sleep mode enable(ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation and provides increased timing flexibility for incoming signals. For read cycles, pipelined SRAM output data is temporarily stored by an edge triggered output register and then released to the output buffers at the next rising edge of clock. The K7N803601B and K7N801801B are implemented with SAMSUNG′s high performance CMOS technology and is available in 100pin TQFP and Multiple power and ground pins minimize ground bounce. FAST ACCESS TIMES PARAMETER Symbol -16 -13 Unit Cycle Time tCYC 6.0 7.5 ns Clock Access Time tCD 3.5 4.2 ns Output Enable Access Time tOE 3.5 3.8 ns LOGIC BLOCK DIAGRAM LBO A [0:17] or A [0:18] CKE ADDRESS REGISTER A2~A17 or A2~A18 CONTROL LOGIC CLK A0~A1 ADV WE BWx (x=a,b,c,d or a,b) CONTROL REGISTER CS1 CS2 CS2 WRITE ADDRESS REGISTER K BURST ADDRESS COUNTER A′0~A′1 WRITE ADDRESS REGISTER 256Kx36 , 512Kx18 MEMORY ARRAY K DATA-IN REGISTER K DATA-IN REGISTER CONTROL LOGIC K OUTPUT REGISTER BUFFER OE ZZ 36 or 18 DQa0 ~ DQd7 or DQa0 ~ DQb8 DQPa ~ DQPd NtRAMTM and No Turnaround Random Access Memory are trademarks of Samsung, and its architecture and functionalities are supported by NEC and Toshiba. -3- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM CLK WE CKE OE ADV N.C. A17 A8 A9 88 87 86 85 84 83 82 81 BWa VSS BWb 93 89 BWc 94 90 BWd 95 CS2 CS2 96 VDD CS1 97 91 A7 98 92 A6 99 100 Pin TQFP (20mm x 14mm) 38 39 40 41 42 43 44 45 46 47 48 49 50 N.C. N.C. VSS VDD N.C. N.C. A10 A11 A12 A13 A14 A15 A16 35 A2 37 34 A3 A0 33 A4 36 32 A1 31 K7N803601B(256Kx36) K7N803201B(256Kx32) A5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 LBO DQPc DQc0 DQc1 VDDQ VSSQ DQc2 DQc3 DQc4 DQc5 VSSQ VDDQ DQc6 DQc7 VDD VDD VDD VSS DQd0 DQd1 VDDQ VSSQ DQd2 DQd3 DQd4 DQd5 VSSQ VDDQ DQd6 DQd7 DQPd 100 PIN CONFIGURATION(TOP VIEW) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DQPb DQb7 DQb6 VDDQ VSSQ DQb5 DQb4 DQb3 DQb2 VSSQ VDDQ DQb1 DQb0 VSS VDD VDD ZZ DQa7 DQa6 VDDQ VSSQ DQa5 DQa4 DQa3 DQa2 VSSQ VDDQ DQa1 DQa0 DQPa PIN NAME SYMBOL PIN NAME TQFP PIN NO. SYMBOL 32,33,34,35,36,37,44 45,46,47,48,49,50,81 82,83,99,100 85 ADV Address Advance/Load WE Read/Write Control Input 88 89 Clock CLK 87 Clock Enable CKE 98 Chip Select CS1 97 Chip Select CS2 92 Chip Select CS2 93,94,95,96 BWx(x=a,b,c,d) Byte Write Inputs 86 Output Enable OE 64 Power Sleep Mode ZZ 31 Burst Mode Control LBO A0 - A17 Address Inputs PIN NAME TQFP PIN NO. VDD VSS N.C. Power Supply(+3.3V) 14,15,16,41,65,66,91 17,40,67,90 Ground 38,39,42,43,84 No Connect DQa0~a7 DQb0~b7 DQc0~c7 DQd0~d7 DQPa~Pd Data Inputs/Outputs VDDQ Output Power Supply 4,11,20,27,54,61,70,77 (3.3V or 2.5V) 5,10,21,26,55,60,71,76 Output Ground VSSQ 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 Notes : 1. The pin 84 is reserved for address bit for the 16Mb NtRAM. 2. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired. -4- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM VSS CLK WE CKE OE ADV N.C. A18 A8 A9 89 88 87 86 85 84 83 82 81 BWa 93 90 BWb 94 CS2 N.C. 95 VDD CS2 N.C. 91 CS1 97 92 A7 98 96 A6 99 100 Pin TQFP (20mm x 14mm) 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A0 N.C. N.C. VSS VDD N.C. N.C. A11 A12 A13 A14 A15 A16 A17 34 A3 A1 33 A4 35 32 A2 31 K7N801801B(512Kx18) A5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 LBO N.C. N.C. N.C. VDDQ VSSQ N.C. N.C. DQb8 DQb7 VSSQ VDDQ DQb6 DQb5 VDD VDD VDD VSS DQb4 DQb3 VDDQ VSSQ DQb2 DQb1 DQb0 N.C. VSSQ VDDQ N.C. N.C. N.C. 100 PIN CONFIGURATION(TOP VIEW) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A10 N.C. N.C. VDDQ VSSQ N.C. DQa0 DQa1 DQa2 VSSQ VDDQ DQa3 DQa4 VSS VDD VDD ZZ DQa5 DQa6 VDDQ VSSQ DQa7 DQa8 N.C. N.C. VSSQ VDDQ N.C. N.C. N.C. PIN NAME SYMBOL PIN NAME TQFP PIN NO. 32,33,34,35,36,37,44 45,46,47,48,49,50,80 81,82,83,99,100 85 Address Advance/Load ADV Read/Write Control Input 88 WE 89 Clock CLK 87 Clock Enable CKE 98 Chip Select CS1 97 Chip Select CS2 92 Chip Select CS2 93,94 BWx(x=a,b) Byte Write Inputs 86 Output Enable OE 64 Power Sleep Mode ZZ 31 Burst Mode Control LBO A0 - A18 Address Inputs SYMBOL PIN NAME TQFP PIN NO. VDD VSS N.C. Power Supply(+3.3V) Ground No Connect 14,15,16,41,65,66,91 17,40,67,90 1,2,3,6,7,25,28,29,30, 38,39,42,43,51,52,53, 56,57,75,78,79,84,95,96 DQa0~a8 DQb0~b8 Data Inputs/Outputs 58,59,62,63,68,69,72,73,74 8,9,12,13,18,19,22,23,24 VDDQ Output Power Supply (3.3V or 2.5V) Output Ground 4,11,20,27,54,61,70,77 VSSQ 5,10,21,26,55,60,71,76 Notes : 1. The pin 84 is reserved for address bit for the 16Mb NtRAM. 2. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired. -5- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM FUNCTION DESCRIPTION The K7N803601B and K7N801801B is NtRAMTM designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from Read to Write, or vice versa. All inputs (with the exception of OE, LBO and ZZ) are synchronized to rising clock edges. All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next operation. Clock Enable(CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous inputs are ignored and the internal device registers will hold their previous values. NtRAMTM latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables(CS1, CS2, CS2) are active . Output Enable(OE) can be used to disable the output at any given time. Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the address register, CKE is driven low, all three chip enables(CS1, CS2, CS2) are active, the write enable input signals WE are driven high, and ADV driven low.The internal array is read between the first rising edge and the second rising edge of the clock and the data is latched in the output register. At the second clock edge the data is driven out of the SRAM. Also during read operation OE must be driven low for the device to drive out the requested data. Write operation occurs when WE is driven low at the rising edge of the clock. BW[d:a] can be used for byte write operation. The pipelined NtRAMTM uses a late-late write cycle to utilize 100% of the bandwidth. At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required two cycle later. Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is provided by the external address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected. And when this pin is high, Interleaved burst sequence is selected. During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM normally operates after 2 cycles of wake up time. BURST SEQUENCE TABLE LBO PIN HIGH First Address Fourth Address (Interleaved Burst, LBO=High) Case 1 A1 0 0 1 1 Case 2 A0 0 1 0 1 A1 0 0 1 1 Case 3 A0 1 0 1 0 A1 1 1 0 0 BQ TABLE LBO PIN Case 4 A0 0 1 0 1 A1 1 1 0 0 A0 1 0 1 0 (Linear Burst, LBO=Low) LOW First Address Fourth Address Case 1 A1 0 0 1 1 Case 2 A0 0 1 0 1 A1 0 1 1 0 Case 3 A0 1 0 1 0 A1 1 1 0 0 Case 4 A0 0 1 0 1 A1 1 0 0 1 A0 1 0 1 0 Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed. -6- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM STATE DIAGRAM FOR NtRAMTM WRITE READ READ BEGIN READ BEGIN WRITE ITE WR DS RE A D DS ST ST BUR DESELECT R IT E DS W D EA R BURST DS BURST READ BURST WRITE COMMAND DS WRI TE BUR D REA DS BURST WRITE BURST ACTION DESELECT READ BEGIN READ WRITE BEGIN WRITE BURST BEGIN READ BEGIN WRITE CONTINUE DESELECT Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does not change the state of the device. 2. States change on the rising edge of the clock(CLK) -7- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM TRUTH TABLES SYNCHRONOUS TRUTH TABLE CS1 CS2 CS2 ADV WE BWx OE CKE CLK ADDRESS ACCESSED OPERATION H X X L X X X L ↑ N/A Not Selected X L X L X X X L ↑ N/A Not Selected X X H L X X X L ↑ N/A Not Selected X X X H X X X L ↑ N/A Not Selected Continue L H L L H X L L ↑ External Address Begin Burst Read Cycle X X X H X X L L ↑ Next Address Continue Burst Read Cycle L H L L H X H L ↑ External Address NOP/Dummy Read X X X H X X H L ↑ Next Address Dummy Read L H L L L L X L ↑ External Address Begin Burst Write Cycle X X X H X L X L ↑ Next Address Continue Burst Write Cycle L H L L L H X L ↑ N/A NOP/Write Abort X X X H X H X L ↑ Next Address Write Abort X X X X X X X H ↑ Current Address Ignore Clock Notes : 1. X means "Don′t Care". 2. The rising edge of clock is symbolized by (↑). 3. A continue deselect cycle can only be enterd if a deselect cycle is executed first. 4. WRITE = L means Write operation in WRITE TRUTH TABLE. WRITE = H means Read operation in WRITE TRUTH TABLE. 5. Operation finally depends on status of asynchronous input pins(ZZ and OE). WRITE TRUTH TABLE(x36) WE BWa BWb BWc BWd OPERATION H X X X X READ L L H H H WRITE BYTE a L H L H H WRITE BYTE b L H H L H WRITE BYTE c L H H H L WRITE BYTE d L L L L L WRITE ALL BYTEs L H H H H WRITE ABORT/NOP Notes : 1. X means "Don′t Care". 2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑). -8- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM ASYNCHRONOUS TRUTH TABLE Operation ZZ OE I/O STATUS Sleep Mode H X High-Z Read L L DQ L H High-Z Write L X Din, High-Z Deselected L X High-Z Notes 1. X means "Don′t Care". 2. Sleep Mode means power Sleep Mode of which stand-by current does not depend on cycle time. 3. Deselected means power Sleep Mode of which stand-by current depends on cycle time. ABSOLUTE MAXIMUM RATINGS* SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS PARAMETER VDD -0.3 to 4.6 V Voltage on Any Other Pin Relative to VSS VIN -0.3 to VDD+0.3 V Power Dissipation PD 1.6 W Storage Temperature Commercial Operating Temperature Industrial Storage Temperature Range Under Bias TSTG -65 to 150 °C TOPR 0 to 70 °C TOPR -40 to 85 °C TBIAS -10 to 85 °C *Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C) PARAMETER Supply Voltage Ground SYMBOL MIN Typ. MAX UNIT VDD 3.135 3.3 3.465 V VDDQ 3.135 3.3 3.465 V VSS 0 0 0 V * The above parameters are also guaranteed at industrial temperature range. OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C) PARAMETER Supply Voltage Ground SYMBOL MIN Typ. MAX UNIT VDD 3.135 3.3 3.465 V VDDQ 2.375 2.5 2.9 V VSS 0 0 0 V * The above parameters are also guaranteed at industrial temperature range. CAPACITANCE*(TA=25°C, f=1MHz) PARAMETER Input Capacitance Output Capacitance SYMBOL TEST CONDITION MIN MAX UNIT CIN VIN=0V - 5 pF COUT VOUT=0V - 7 pF *Note : Sampled not 100% tested. -9- Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C) PARAMETER SYMBOL Input Leakage Current(except ZZ) IIL VDD=Max ; VIN=VSS to VDD Output Leakage Current IOL Output Disabled, Vout=VSS to VDDQ Operating Current ICC ISB Standby Current ISB1 ISB2 TEST CONDITIONS MIN MAX -2 +2 µA µA UNIT NOTES -2 +2 Device Selected , IOUT=0mA, -16 - 350 ZZ≤VIL , Cycle Time ≥ tCYC Min -13 - 300 Device deselected, IOUT=0mA, ZZ≤VIL, -16 - 130 f=Max, All Inputs≤0.2V or ≥ VDD-0.2V -13 - 120 - 100 mA - 60 mA Device deselected, IOUT=0mA, ZZ≤0.2V, f=0, All Inputs=fixed (VDD-0.2V or 0.2V) Device deselected, IOUT=0mA, ZZ≥VDD-0.2V, f=Max, All Inputs≤VIL or ≥VIH mA 1,2 mA Output Low Voltage(3.3V I/O) VOL IOL=8.0mA - 0.4 V Output High Voltage(3.3V I/O) VOH IOH=-4.0mA 2.4 - V Output Low Voltage(2.5V I/O) VOL IOL=1.0mA - 0.4 V Output High Voltage(2.5V I/O) VOH IOH=-1.0mA 2.0 - V Input Low Voltage(3.3V I/O) VIL -0.3* 0.8 V Input High Voltage(3.3V I/O) VIH 2.0 VDD+0.3** V Input Low Voltage(2.5V I/O) VIL -0.3* 0.7 V Input High Voltage(2.5V I/O) VIH 1.7 VDD+0.3** V 3 3 Notes : 1. The above parameters are also guaranteed at industrial temperature range. 2. Reference AC Operating Conditions and Characteristics for input and timing. 3. Data states are all zero. 4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V VIH VSS VSS-1.0V 20% tCYC(MIN) TEST CONDITIONS (VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C) Parameter Value Input Pulse Level(for 3.3V I/O) 0 to 3.0V Input Pulse Level(for 2.5V I/O) 0 to 2.5V Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O) 1.0V/ns Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O) 1.0V/ns Input and Output Timing Reference Levels for 3.3V I/O 1.5V Input and Output Timing Reference Levels for 2.5V I/O VDDQ/2 Output Load See Fig. 1 * The above parameters are also guaranteed at industrial temperature range. - 10 - Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Output Load(B), (for tLZC, tLZOE, tHZOE & tHZC) Output Load(A) +3.3V for 3.3V I/O /+2.5V for 2.5V I/O RL=50Ω Dout Zo=50Ω 30pF* VL=1.5V for 3.3V I/O VDDQ/2 for 2.5V I/O 319Ω / 1667Ω Dout 353Ω / 1538Ω 5pF* * Including Scope and Jig Capacitance Fig. 1 AC TIMING CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0 to 70°C) PARAMETER SYMBOL -16 MIN -13 MAX MIN MAX UNIT Cycle Time tCYC 6.0 - 7.5 - ns Clock Access Time tCD - 3.5 - 4.2 ns Output Enable to Data Valid tOE - 3.5 - 4.2 ns Clock High to Output Low-Z tLZC 1.5 - 1.5 - ns tOH 1.5 - 1.5 - ns Output Enable Low to Output Low-Z tLZOE 0 - 0 - ns Output Hold from Clock High Output Enable High to Output High-Z tHZOE - 3.0 - 3.5 ns Clock High to Output High-Z tHZC - 3.0 - 3.5 ns Clock High Pulse Width tCH 2.2 - 3.0 - ns Clock Low Pulse Width tCL 2.2 - 3.0 - ns Address Setup to Clock High tAS 1.5 - 1.5 - ns CKE Setup to Clock High tCES 1.5 - 1.5 - ns Data Setup to Clock High tDS 1.5 - 1.5 - ns Write Setup to Clock High (WE, BWX) tWS 1.5 - 1.5 - ns Address Advance Setup to Clock High tADVS 1.5 - 1.5 - ns Chip Select Setup to Clock High tCSS 1.5 - 1.5 - ns Address Hold from Clock High tAH 0.5 - 0.5 - ns CKE Hold from Clock High tCEH 0.5 - 0.5 - ns Data Hold from Clock High tDH 0.5 - 0.5 - ns Write Hold from Clock High (WE, BWEX) tWH 0.5 - 0.5 - ns Address Advance Hold from Clock High tADVH 0.5 - 0.5 - ns Chip Select Hold from Clock High tCSH 0.5 - 0.5 - ns ZZ High to Power Down tPDS 2 - 2 - cycle ZZ Low to Power Up tPUS 2 - 2 - cycle Notes : 1. The above parameters are also guaranteed at industrial temperature range. 2. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 3. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled. 4. A write cycle is defined by WE low having been registered into the device at ADV Low, A Read cycle is defined by WE High with ADV Low, Both cases must meet setup and hold times. 5. To avoid bus contention, At a given voltage and temperature tLZC is more than tHZC. The specs as shown do not imply bus contention because tLZC is a Min. parameter that is worst case at totally different test conditions (0°C,3.465V) than tHZC, which is a Max. parameter(worst case at 70°C,3.135V) It is not possible for two SRAMs on the same board to be at such different voltage and temperature. - 11 - Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM SLEEP MODE SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of SLEEP MODE is dictated by the length of time the ZZ is in a High state. After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE. When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pending operations are completed. similarly, when exiting SLEEP MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SLEEP MODE. SLEEP MODE ELECTRICAL CHARACTERISTICS DESCRIPTION CONDITIONS SYMBOL ZZ ≥ VIH Current during SLEEP MODE MIN ISB2 MAX 60 ZZ active to input ignored tPDS 2 ZZ inactive to input sampled tPUS 2 ZZ active to SLEEP current tZZI ZZ inactive to exit SLEEP current tRZZI UNITS mA cycle cycle 2 cycle 0 SLEEP MODE WAVEFORM K tPDS ZZ setup cycle tPUS ZZ recovery cycle ZZ tZZI Isupply ISB2 tRZZI All inputs (except ZZ) Deselect or Read Only Deselect or Read Only Normal operation cycle Outputs (Q) High-Z DON′T CARE - 12 - Nov. 2003 Rev 3.0 - 13 - Data Out OE ADV CS WRITE Address CKE Clock A1 tADVH tCSH tWH tAH tLZOE tOE Q1-1 A2 tHZOE tCEH Q2-1 tCD tOH tCYC Q2-2 tCL NOTES : WRITE = L means WE = L, and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L tADVS tCSS tWS tAS tCES tCH Q2-3 A3 TIMING WAVEFORM OF READ CYCLE Q2-4 Q3-1 Q3-2 Q3-3 Undefined Don′t Care Q3-4 tHZC K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Nov. 2003 Rev 3.0 - 14 - Data Out Data In OE ADV CS WRITE Address CKE Clock Q0-4 tHZOE D1-1 A2 tCYC tCL D2-1 D2-2 NOTES : WRITE = L means WE = L, and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L Q0-3 A1 tCES tCEH tCH D2-3 A3 TIMING WAVEFORM OF WRTE CYCLE D2-4 D3-1 tDS D3-2 tDH D3-3 Undefined Don′t Care D3-4 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Nov. 2003 Rev 3.0 - 15 - Data In Data Out OE ADV CS WRITE Address CKE Clock tOE tLZOE A2 Q1 A3 tDS D2 tDH Q3 A4 NOTES : WRITE = L means WE = L, and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L A1 tCES tCEH A5 Q4 A6 D5 A7 TIMING WAVEFORM OF SINGLE READ/WRITE tCH Q6 tCYC tCL A8 Q7 A9 Undefined Don′t Care K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Nov. 2003 Rev 3.0 - 16 - Data In A1 tCES tCEH tCD tLZC A2 Q1 tHZC A3 NOTES : WRITE = L means WE = L, and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L Data Out OE ADV CS WRITE Address CKE Clock tDS A4 D2 TIMING WAVEFORM OF CKE OPERATION tDH tCH Q3 tCYC tCL A5 Q4 A6 Undefined Don′t Care K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Nov. 2003 Rev 3.0 - 17 - Data In Data Out OE ADV CS WRITE Address CKE Clock A1 tCEH tOE tLZOE A2 Q1 Q2 tHZC A3 NOTES : WRITE = L means WE = L, and BWx = L CS = L means CS1 = L, CS2 = H and CS2 = L CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L tCES D3 tDS tDH A4 tCD tLZC TIMING WAVEFORM OF CS OPERATION Q4 A5 tCH tCYC tCL D5 Undefined Don′t Care K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM Nov. 2003 Rev 3.0 K7N803601B K7N801801B 256Kx36 & 512Kx18 Pipelined NtRAMTM PACKAGE DIMENSIONS 100-TQFP-1420A Units ; millimeters/Inches 0~8° 22.00 ±0.30 0.10 0.127 +- 0.05 20.00 ±0.20 16.00 ±0.30 14.00 ±0.20 0.10 MAX (0.83) 0.50 ±0.10 #1 0.65 (0.58) 0.30 ±0.10 0.10 MAX 1.40 ±0.10 1.60 MAX 0.50 ±0.10 - 18 - 0.05 MIN Nov. 2003 Rev 3.0