ACR300SG33 Fast Turn-on Asymmetric Thyristor DS5081-2.5 JUNE 2006 (LN24670) FEATURES KEY PARAMETERS • Double Side Cooling • Fast Turn-on characteristics APPLICATIONS • Fast capacitor discharge • Pulse power Applications • Fast crowbar application VDRM IT(AV) ITSM dV/dt* dI/dt 3300V 493A 6500A 3000V/µs 2000A/µs ton 400ns VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltages VRRM V ACR300SG33 3300 20 Tvj = -40°C to 125°C, IDRM = 50mA, VDRM, tp = 10ms, VDSM =VDRM + 100V Tvj = -40°C to 125°C, IRRM = 50mA, VRRM tp = 10ms, VRSM = VRRM + 100V Outline type code: G (See Package Details for further information) Lower voltage grades available. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: ACR300SG33 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/7 www.dynexsemi.com ACR300SG33 SEMICONDUCTOR CURRENT RATINGS Tcase = 80°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 493 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 774 A Continuous (direct) on-state current - 630 A 343 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 539 A Continuous (direct) on-state current - 420 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 6.5 kA VR = 0 211 kA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Tstg Storage temperature range Fm Clamping force Test Conditions Double side cooled DC - 0.042 °C/W Single side cooled Anode DC - 0.070 °C/W Cathode DC - 0.092 °C/W Clamping force 7.0±1kN Double side - 0.018 °C/W (with mounting compound) Single side - .036 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C -55 125 °C 6 8 kN 2/7 www.dynexsemi.com ACR300SG33 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units Maximum on-state voltage At 1000A peak, Tcase = 25° C - 2.0 V Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 60 mA dV/dt Max. linear rate of rise of off-state voltage To VD = 2000V, Tj = 125°C, gate open dI/dt Rate of rise of on-state current From VDRM to 125A Gate source 30V, 10Ω, Gate rise time tr ≤ 100ns, Tj = 125°C VT(TO) Threshold voltage Tvj = 125°C rT On-state slope resistance tgd VTM IRRM/IDRM 3000 V/µs 2000 A/µs - 1.19 V Tvj = 125°C - 0.81 mΩ Delay time VD = 3000V, gate source 30V, 10Ω Gate rise time tr = 100ns, Tj = 25°C - 350 ns tr Rise time As defined in Figure 2 Tj = 25°C 50 ns IL Latching current Tj = 25°C, V D = 5V - 600 mA IH Holding current Tj = 25°C, R G-K = ∞, ITM = 500A, IT = 5A - 300 mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDWM = 12V, RL = 6Ω Tcase = 25°C 5 V I GT Gate trigger current VDWM = 12V, RL = 6Ω Tcase = 125°C 500 mA V FGM Peak forward gate voltage 40 V V RGM Peak reverse gate voltage 10 V I FGM Peak forward gate current 20 A P GM Peak gate power 40 W 10 W P G(AV) Average gate power Average time 10ms max 3/7 www.dynexsemi.com ACR300SG33 SEMICONDUCTOR CURRENT CARRYING CAPABILITY AFTER DEVICE SHORT CIRCUIT CURVES Fig.2 Turn-on time measurement 4/7 www.dynexsemi.com ACR300SG33 SEMICONDUCTOR Fig.3 On-state Characteristics Fig.4 Transient thermal impedance- junction to case Maximum Case Temperature ( deg C) 140 120 double side 100 single side 80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 1000 Average Forward Current (A) Fig.5 Average current rating vs temperature 5/7 www.dynexsemi.com ACR300SG33 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 250g Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G Fig.6 Package outline 6/7 www.dynexsemi.com ACR300SG33 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7 www.dynexsemi.com