Dynex ACR300SG33 Fast turn-on asymmetric thyristor Datasheet

ACR300SG33
Fast Turn-on Asymmetric Thyristor
DS5081-2.5 JUNE 2006 (LN24670)
FEATURES
KEY PARAMETERS
•
Double Side Cooling
•
Fast Turn-on characteristics
APPLICATIONS
•
Fast capacitor discharge
•
Pulse power Applications
•
Fast crowbar application
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
3300V
493A
6500A
3000V/µs
2000A/µs
ton
400ns
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Off-state Voltage
VDRM
V
Repetitive Peak
Reverse Voltages
VRRM
V
ACR300SG33
3300
20
Tvj = -40°C to 125°C,
IDRM = 50mA,
VDRM, tp = 10ms,
VDSM =VDRM + 100V
Tvj = -40°C to 125°C,
IRRM = 50mA,
VRRM tp = 10ms,
VRSM = VRRM + 100V
Outline type code: G
(See Package Details for further information)
Lower voltage grades available.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
ACR300SG33
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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ACR300SG33
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 80°C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
493
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
774
A
Continuous (direct) on-state current
-
630
A
343
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
539
A
Continuous (direct) on-state current
-
420
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
6.5
kA
VR = 0
211
kA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Tstg
Storage temperature range
Fm
Clamping force
Test Conditions
Double side cooled
DC
-
0.042
°C/W
Single side cooled
Anode DC
-
0.070
°C/W
Cathode DC
-
0.092
°C/W
Clamping force 7.0±1kN
Double side
-
0.018
°C/W
(with mounting compound)
Single side
-
.036
°C/W
On-state (conducting)
-
135
°C
Reverse (blocking)
-
125
°C
-55
125
°C
6
8
kN
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ACR300SG33
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Maximum on-state voltage
At 1000A peak, Tcase = 25° C
-
2.0
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
60
mA
dV/dt
Max. linear rate of rise of off-state voltage
To VD = 2000V, Tj = 125°C, gate open
dI/dt
Rate of rise of on-state current
From VDRM to 125A
Gate source 30V, 10Ω,
Gate rise time tr ≤ 100ns, Tj = 125°C
VT(TO)
Threshold voltage
Tvj = 125°C
rT
On-state slope resistance
tgd
VTM
IRRM/IDRM
3000
V/µs
2000
A/µs
-
1.19
V
Tvj = 125°C
-
0.81
mΩ
Delay time
VD = 3000V, gate source 30V, 10Ω
Gate rise time tr = 100ns, Tj = 25°C
-
350
ns
tr
Rise time
As defined in Figure 2
Tj = 25°C
50
ns
IL
Latching current
Tj = 25°C, V D = 5V
-
600
mA
IH
Holding current
Tj = 25°C, R G-K = ∞, ITM = 500A, IT = 5A
-
300
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDWM = 12V, RL = 6Ω Tcase = 25°C
5
V
I GT
Gate trigger current
VDWM = 12V, RL = 6Ω Tcase = 125°C
500
mA
V FGM
Peak forward gate voltage
40
V
V RGM
Peak reverse gate voltage
10
V
I FGM
Peak forward gate current
20
A
P GM
Peak gate power
40
W
10
W
P G(AV)
Average gate power
Average time 10ms max
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ACR300SG33
SEMICONDUCTOR
CURRENT CARRYING CAPABILITY AFTER DEVICE SHORT CIRCUIT
CURVES
Fig.2 Turn-on time measurement
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ACR300SG33
SEMICONDUCTOR
Fig.3 On-state Characteristics
Fig.4 Transient thermal impedance- junction to case
Maximum Case Temperature ( deg C)
140
120
double side
100
single side
80
60
40
20
0
0
100
200
300
400
500
600
700
800
900
1000
Average Forward Current (A)
Fig.5 Average current rating vs temperature
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ACR300SG33
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 250g
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
Fig.6 Package outline
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ACR300SG33
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
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