PHILIPS BF470 Pnp high-voltage transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF470; BF472
PNP high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
2
• Class-B video output stages in television receivers and
for high-voltage IF output stages.
3
1
DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
1
2
3
Top view
MAM272
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to mounting base
3
base
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BF470
−
−250
V
BF472
−
−300
V
BF470
−
−250
V
BF472
−
−300
V
collector-emitter voltage
open base
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
Tmb ≤ 114 °C
−
1.8
W
hFE
DC current gain
IC = −25 mA; VCE = −20 V
50
−
Cre
feedback capacitance
IC = ic = 0; VCE = −30 V; f = 1 MHz
−
1.8
pF
fT
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz
60
−
MHz
1996 Dec 09
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BF470
−
−250
V
BF472
−
−300
V
BF470
−
−250
V
BF472
−
−300
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−50
mA
ICM
peak collector current
−
−100
mA
IBM
peak base current
−
−50
mA
Ptot
total power dissipation
−
1.8
W
Tstg
storage temperature
Tmb ≤ 114 °C
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
Rth j-mb
thermal resistance from junction to mounting base
VALUE
UNIT
100
K/W
20
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −200 V
−
−10
nA
IE = 0; VCB = −200 V; Tj = 150 °C
−
−10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−50
hFE
DC current gain
IC = −25 mA; VCE = −20 V
50
−
VCEsat
collector-emitter saturation voltage IC = −30 mA; IB = −5 mA
−
−600
mV
Cre
feedback capacitance
IC = ic = 0; VCE = −30 V; f = 1 MHz
−
1.8
pF
fT
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz 60
−
MHz
1996 Dec 09
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
PACKAGE OUTLINE
2.7
max
handbook, full pagewidth
7.8 max
3.75
3.2
3.0
2.54
max
11.1
max
(1)
1.2
15.3
min
1
4.58
2
3
0.88
max
0.5
90 o
2.29
MBC076
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-126; SOT32.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
4
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
NOTES
1996 Dec 09
5
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
NOTES
1996 Dec 09
6
Philips Semiconductors
Product specification
PNP high-voltage transistors
BF470; BF472
NOTES
1996 Dec 09
7
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© Philips Electronics N.V. 1996
SCA52
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Printed in The Netherlands
117041/00/02/pp8
Date of release: 1996 Dec 09
Document order number:
9397 750 01567
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