ON NTF3055-160T3LF Power mosfet 2.0 amps, 60 volts n-channel sot-223 Datasheet

NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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2.0 AMPERES
60 VOLTS
RDS(on) = 160 m
Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N–Channel
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
± 20
± 30
Vdc
Vpk
ID
ID
IDM
2.0
1.2
6.0
Adc
PD
2.1
1.3
0.014
W
W
W/°C
TJ, Tstg
–55 to
175
°C
EAS
65
mJ
Rating
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
Thermal Resistance
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
VGS
G
S
MARKING
DIAGRAM
Apk
4
1
SOT–223
CASE 318E
STYLE 3
2
5160
LWW
3
5160
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
4 Drain
°C/W
RθJA
RθJA
72.3
114
TL
260
°C
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2–2.4 oz. (Cu. Area 0.272 in2).
1
Gate
2
Drain
3
Source
ORDERING INFORMATION
Device
 Semiconductor Components Industries, LLC, 2001
July, 2001 – Rev. 0
1
Package
Shipping
NTF3055–160T1
SOT–223 1000 Tape & Reel
NTF3055–160T3
SOT–223 4000 Tape & Reel
NTF3055–160T3LF
SOT–223 4000 Tape & Reel
Publication Order Number:
NTF3055–160/D
NTF3055–160
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
60
–
72
72
–
–
–
–
–
–
1.0
10
–
–
± 100
2.0
–
3.1
6.6
4.0
–
–
142
160
–
0.142
0.270
0.384
–
gfs
–
1.8
–
Mhos
Ciss
–
200
280
pF
Coss
–
68
100
Crss
–
26
40
td(on)
–
9.2
20
tr
–
9.2
20
td(off)
–
16
40
tf
–
9.2
20
QT
–
6.9
14
Q1
–
1.4
–
Q2
–
3.0
–
–
–
0.86
0.70
1.0
–
trr
–
28.9
–
ta
–
19.1
–
tb
–
9.8
–
QRR
–
0.030
–
OFF CHARACTERISTICS
V(BR)DSS
Drain–to–Source Breakdown Voltage (Note 3.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current
Vdc
µAdc
IDSS
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
mV/°C
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage (Note 3.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3.)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
Vdc
mV/°C
mΩ
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 V,
V
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 Ω) (Note 3.)
Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 2.0
2 0 Adc,
Ad
VGS = 10 Vdc) (Note 3.)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3.)
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 3.)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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2
VSD
Vdc
ns
µC
NTF3055–160
VGS = 6 V
3.2
2.8
2.4
VGS = 7 V
2
VGS = 8 V
1.6
VGS = 5 V
1.2
0.8
VGS = 10 V
VGS = 4.5 V
0.4
0.8
0.4
1.6
1.2
2
2.4
1.6
1.2
TJ = 25°C
0.8
TJ = 100°C
0.4
2.8
3
3.8
4.2
4.6
5
5.4
5.8
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.28
VGS = 10 V
0.24
TJ = 100°C
0.2
TJ = 25°C
0.16
0.12
TJ = –55°C
0.08
0.04
0
3.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.5
1
1.5
2.5
2
3
3.5
4
ID, DRAIN CURRENT (AMPS)
6.2
0.28
VGS = 15 V
0.24
0.2
0.16
TJ = 25°C
0.12
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
4
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1000
2
1.8
VGS = 0 V
ID = 1 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
2
TJ = –55°C
0
RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
2.4
0
0
0
VDS ≥ 10 V
2.8
VGS = 5.5 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
3.6
1.6
1.4
1.2
1
100
TJ = 125°C
10
TJ = 100°C
0.8
0.6
–50
1
–25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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3
60
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
NTF3055–160
560
12
VGS = 0 V
VDS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
480
Ciss
400
320
Crss
240
Ciss
160
Coss
80
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
4
2
ID = 2 A
TJ = 25°C
0
0
1
2
3
4
5
7
6
8
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
2
IS, SOURCE CURRENT (AMPS)
td(off)
td(on)
tr
10
tf
1
10
100
0.8
0.4
0
0.6
0.64
0.68
0.72
0.76
0.8
0.84
0.88
Figure 10. Diode Forward Voltage versus Current
dc
10 ms
1 ms
0.001
0.1
1.2
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1
0.01
1.6
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1
VGS = 0 V
TJ = 25°C
RG, GATE RESISTANCE (Ω)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
100 µs
10 µs
10
100
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
t, TIME (ns)
Q2
Figure 7. Capacitance Variation
100
ID, DRAIN CURRENT (AMPS)
Q1
6
Qg, TOTAL GATE CHARGE (nC)
VDS = 30 V
ID = 2 A
VGS = 10 V
10
VGS
8
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
100
1
QT
10
70
ID = 6 A
60
50
40
30
20
10
0
25
50
75
100
125
150
175
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
NTF3055–160
100
D = 0.5
10
0.2
0.1
0.05
1
P(pk)
MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.1
0.01
t, TIME (s)
Figure 13. Thermal Response
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5
1
10
100
1000
NTF3055–160
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
1
2
3
B
D
L
G
J
C
0.08 (0003)
H
M
K
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6
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
NTF3055–160
Notes
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7
NTF3055–160
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8
NTF3055–160/D
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