PD - 93784F RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57160 100V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57160 100K Rads (Si) IRHM53160 300K Rads (Si) RDS(on) 0.018Ω 0.018Ω ID 35A* 35A* IRHM54160 600K Rads (Si) 0.018Ω 35A* IRHM58160 1000K Rads (Si) 0.019Ω 35A* International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 35* 35* 140 250 2.0 ±20 500 35 25 3.4 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) C g * Current is limited by internal wire diameter For footnotes refer to the last page www.irf.com 1 08/07/02 IRHM57160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions 100 — — V VGS = 0V, ID = 1.0mA — 0.013 — V/°C Reference to 25°C, ID = 1.0mA — — 0.018 Ω 2.0 42 — — — — — — 4.0 — 10 25 V S( ) — — — — — — — — — — — — — — — — — — — 6.8 100 -100 160 45 65 35 75 75 35 — nA VGS = 12V, ID = 35A ➃ nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 50V ns VDD = 50V, ID = 35A VGS =12V, RG = 2.35Ω Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5620 1583 50 — — — VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 35* 140 1.2 270 1.9 Test Conditions A V ns µC Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≤100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by internal wire diameter Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.50 0.21 — — 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM57160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-254) Diode Forward Voltage ➃ Test Conditions 100 2.0 — — — — — 4.0 100 -100 10 0.013 100 1.5 — — — — — 4.0 100 -100 25 0.014 µA Ω — 0.018 — 0.019 Ω VGS = 12V, ID =35A — 1.2 1.2 V VGS = 0V, IS = 35A — V nA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID =35A 1. Part numbers IRHM57160, IRHM53160 and IRHM54160 2. Part number IRHM58160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 — Energy (MeV) 309 341 350 120 VGS 100 80 Br 60 I 40 Au 20 0 0 -5 -10 -15 -20 VDS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM57160 Pre-Irradiation 1000 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 5.0V 10 20µs PULSE WIDTH T = 25 C 1 5.0V 10 10 100 2.5 TJ = 150 ° C 100 15 V DS = 50V 20µs PULSE WIDTH 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C 7 10 100 Fig 2. Typical Output Characteristics 1000 6 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5 ° J 1 0.1 VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH T = 150 C ° J 1 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 35A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 6000 Ciss 4000 C oss 2000 20 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) IRHM57160 ID = 35A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 C rss FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 30 90 120 150 180 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 60 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 TJ = 150 ° C 100 10 TJ = 25 ° C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com OPERATION IN THIS AREA LIMITED BY R DS(on) 2.0 10µs 100µs 10 1ms Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM57160 Pre-Irradiation 100 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 80 D.U.T. RG + -VDD 60 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM57160 1 5V L VD S D .U .T. RG IA S VGS 20V TOP 1000 D R IV E R + - VD D 0 .0 1 Ω tp EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit A BOTTOM ID 16A 22A 35A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM57160 Pre-Irradiation Footnotes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 0.82 mH Peak IL = 35A, VGS = 12V ➂ ISD ≤ 35A, di/dt ≤ 330A/µs, VDD ≤ 100V, TJ ≤ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 13.84 [.545] 13.59 [.535] 0.12 [.005] 1.27 [.050] 1.02 [.040] B C 2 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 2 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] 4.82 [.190] 3.81 [.150] 4.06 [.160] 3.56 [.140] 1.14 [.045] 0.89 [.035] 3X 2X 0.36 [.014] B A PIN AS S IGNMENT S B A NOTES : 1. 2. 3. 4. B R 1.52 [.060] 3.81 [.150] 2X 13.84 [.545] 13.59 [.535] 3 3 3X 3.81 [.150] 1.27 [.050] 1.02 [.040] A 1 1 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] PIN AS S IGNMENTS DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUTLINE TO-254AA. 1 = DRAIN 2 = S OURCE 3 = GAT E CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/02 8 www.irf.com