BSS 63 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C PNP SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSS 63 Collector-Emitter-voltage B open - VCE0 100 V Collector-Base-voltage E open - VCB0 110 V Emitter-Base-voltage C open - VEB0 6V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 100 mA Peak Base current – Basis-Spitzenstrom - IBM 100 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 90 V - ICB0 – – 100 nA IE = 0, - VCB = 90 V, Tj = 150/C - ICB0 – – 50 :A - IEB0 – – 100 nA – – 250 mV – – 900 mV Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 6 V 1 Collector saturation volt. – Kollektor-Sättigungsspg. ) - IC = 25 mA, - IB = 2.5 mA - VCEsat 1 Base saturation voltage – Basis-Sättigungsspannung ) - IC = 25 mA, - IB = 2.5 mA 1 - VBEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 14 01.11.2003 Switching Transistors BSS 63 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 1 V, - IC = 10 mA hFE 30 – – - VCE = 1 V, - IC = 25 mA hFE 30 – – fT 50 MHz 85 MHz – – 3 pF – Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 25 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung CCB0 420 K/W 2) RthA BSS 64 BSS 63 = BM ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 15