IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS(on) N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V ±20 V VGSM ID25 TC = 25°C 96 A ID(RMS) External lead current limit 75 A IDM TC = 25°C, pulse width limited by TJM 225 A IAR TC = 25°C 60 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 600 W -55 ... +175 175 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-3P TO-247 TO-268 (TO-3P, TO-247) G D TO-3P (IXTQ) G D g g g (TAB) S TO-268 (IXTT) G 1.13/10 Nm/lb.in. 5.5 6.0 5.0 (TAB) S G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 150°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved V 5.0 V ±100 nA 25 250 µA µA 24 mΩ z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99117D(01/05) IXTH 96N20P IXTQ 96N20P IXTT 96N20P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 52 S 4800 pF 1020 pF 270 pF 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 30 ns td(off) RG = 4 Ω (External) 75 ns 30 ns 145 nC 30 nC 80 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC TO-3P (IXTQ) Outline 0.25 K/W RthCK (TO-3P, TO-247) Source-Drain Diode 0.21 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 96 A ISM Repetitive 240 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM 160 ns 3.0 µC TO-268 Outline TO-247 AD Outline Dim. 1 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTH 96N20P IXTQ 96N20P IXTT 96N20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 250 100 VGS = 10V 9V 90 80 225 200 9V 175 I D - Amperes 70 I D - Amperes VGS = 10V 60 8V 50 40 7V 30 20 150 125 8V 100 75 7V 50 6V 10 25 0 6V 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 12 14 16 18 20 3 VGS = 10V 9V 90 2.8 R D S ( o n ) - Normalized 70 8V 60 50 7V 40 30 VGS = 10V 2.6 80 I D - Amperes 10 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 100 6V 20 2.4 2.2 2 I D = 96A 1.8 1.6 I D = 48A 1.4 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 V D S - Volts 5 6 -50 7 -25 0.5 ID25 Value vs. ID 4.3 4 25 50 75 100 125 150 175 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 100 90 VGS = 10V 3.7 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to 80 3.4 TJ = 175ºC 3.1 70 2.8 2.5 2.2 TJ = 125ºC 1.9 I D - Amperes R D S ( o n ) - Normalized 8 V D S - Volts 60 50 40 30 1.6 20 1.3 1 TJ = 25ºC 10 0 0.7 0 25 50 75 100 125 150 175 200 225 250 I D - Amperes © 2005 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTH 96N20P IXTQ 96N20P IXTT 96N20P Fig. 8. Transconductance 160 80 140 70 120 60 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 100 80 60 TJ = 150ºC 25ºC -40ºC 40 TJ = -40ºC 25ºC 150ºC 50 40 30 20 20 10 0 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 125 175 200 10 VDS = 100V 9 250 I D = 48A 8 I G = 10mA 7 VG S - Volts 200 150 100 6 5 4 3 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 1.6 0 15 30 45 60 75 90 105 120 135 150 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 175ºC R DS(on) Limit TC = 25ºC C iss I D - Amperes Capacitance - picoFarads 150 Fig. 10. Gate Charge 300 I S - Amperes 100 I D - Amperes 1000 C oss 25µs 100 100µs 1ms 10ms 10 DC C rss 100 1 0 5 10 15 20 25 V DS - Volts 30 35 40 10 100 V D S - Volts 1000 IXTH 96N20P IXTQ 96N20P IXTT 96N20P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2005 IXYS All rights reserved 1000