BT139 series E Triacs; sensitive gate Rev. 03 — 23 September 2004 Product data sheet 1. Product profile 1.1 General description Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package. 1.2 Features ■ High sensitivity in all four quadrants. 1.3 Applications ■ General purpose bidirectional switching ■ Phase control. 1.4 Quick reference data ■ VDRM ≤ 600 V (BT139-600E) ■ VDRM ≤ 800 V (BT139-800E) ■ IT(RMS) ≤ 16 A ■ ITSM ≤ 155 A ■ IGT ≤ 10 mA (T2+ G+; T2+ G−; T2− G−) ■ IGT ≤ 25 mA (T2− G+). 2. Pinning information Table 1: Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base, connected to main terminal 2 (T2) Simplified outline mb Symbol T2 T1 G sym051 1 2 3 SOT78 (TO-220AB) BT139 series E Philips Semiconductors Triacs; sensitive gate 3. Ordering information Table 2: Ordering information Type number Package BT139-600E Name Description Version SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT139-800E 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage [1] BT139-600E BT139-800E IT(RMS) RMS on-state current full sinewave; Tmb ≤ 99 °C; Figure 4 and Figure 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; Figure 2 and Figure 3 Min Max Unit - 600 V - 800 V - 16 A t = 20 ms - 155 A t = 16.7 ms - 170 A - 120 A2s T2+ G+ - 50 A/µs T2+ G− - 50 A/µs T2− G− - 50 A/µs T2− G+ I2t I2t for fusing t = 10 ms dIT/dt repetitive rate of rise of on-state current after triggering ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 10 A/µs IGM peak gate current - 2 A VGM peak gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 2 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab093 25 α= 180 Ptot (W) 20 95 Tmb(max) (°C) 101 120 90 15 107 60 30 10 113 α α 5 119 0 0 5 10 125 20 15 IT(RMS) (A) α = conduction angle. Fig 1. Total power dissipation as a function of RMS on-state current; maximum values. 001aab102 160 ITSM (A) IT ITSM 120 T t Tj(initial) = 25 °C max 80 40 0 1 102 10 103 n f = 50 Hz. Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles; maximum values. 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 3 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab092 103 ITSM (A) 102 (1) IT ITSM (2) T t Tj(initial) = 25 °C max 10 10−2 10−1 1 102 10 T (ms) tp ≤ 20 ms. (1) dIT/dt limit. (2) T2− G+ quadrant. Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values. 001aab090 50 IT(RMS) (A) 40 001aab091 20 IT(RMS) (A) (1) 15 30 10 20 5 10 0 10−2 10−1 1 10 surge duration (s) f = 50 Hz; Tmb ≤ 99 °C. 0 −50 50 100 150 Tmb (°C) (1) Tmb = 99 °C. Fig 4. RMS on-state current as a function of surge duration; maximum values. Fig 5. RMS on-state current as a function of mounting base temperature; maximum values. 9397 750 13437 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 4 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Figure 6 - - 1.2 K/W half cycle; Figure 6 - - 1.7 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 001aab098 10 Zth(j-mb) (K/W) (1) 1 (2) 10−1 PD 10−2 t tp 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) (1) Unidirectional. (2) Bidirectional. Fig 6. Transient thermal impedance as a function of pulse width. 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 5 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit T2+ G+ - 2.5 10 mA T2+ G− - 4 10 mA T2− G− - 5 10 mA T2− G+ - 11 25 mA T2+ G+ - 3.2 30 mA T2+ G− - 16 40 mA T2− G− - 4 30 mA T2− G+ - 5.5 40 mA Static characteristics IGT IL gate trigger current latching current VD = 12 V; IT = 0.1 A; Figure 8 VD = 12 V; IGT = 0.1 A; Figure 10 IH holding current VD = 12 V; IGT = 0.1 A; Figure 11 - 4 45 mA VT on-state voltage IT = 20 A; Figure 9 - 1.2 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V VD = VDRM(max); Tj = 125 °C - 0.1 0.5 mA ID off-state leakage current Dynamic characteristics dVD/dt critical rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit - 50 - V/µs tgt gate controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - µs 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 6 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab101 1.6 001aab448 3 VGT(Tj) VGT(25°C) IGT (Tj) IGT(25°C) 1.2 2 (1) (2) (3) (4) 0.8 1 0.4 −50 0 50 100 150 Tj (°C) 0 −50 0 50 100 150 Tj (°C) (1) T2− G+. (2) T2+ G−. (3) T2− G−. (4) T2+ G+. Fig 7. Normalized gate trigger voltage as a function of junction temperature. 001aab094 50 IT (A) 40 (1) (2) Fig 8. Normalized gate trigger current as a function of junction temperature. 001aab100 3 IL(Tj) IL(25°C) (3) 2 30 20 1 10 0 0 1 2 3 0 −50 0 50 100 150 Tj (°C) VT (V) VO = 1.195 V. Rs = 0.018 Ω. (1) Tj = 125 °C; typical values. (2) Tj = 25 °C; maximum values. (3) Tj = 125 °C; maximum values. Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of junction temperature. 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 7 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 001aab099 3 IH(Tj) IH(25°C) 001aab452 103 dVD /dt (V/µs) 2 102 1 0 −50 0 50 100 150 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature. 10 0 100 Tj (°C) 150 Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values. 9397 750 13437 Product data sheet 50 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 8 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22 Fig 13. Package outline; SOT78 (TO-220AB). 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 9 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BT139_SERIES_E_3 20040923 Product data sheet - BT139_SERIES_E_2 Modifications: • 9397 750 13437 The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. BT139_SERIES_E_2 20010701 Product specification - - BT139_SERIES_E_1 BT139_SERIES_E_1 19971001 Product specification - - - 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 10 of 12 BT139 series E Philips Semiconductors Triacs; sensitive gate 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions 11. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 12. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13437 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 — 23 September 2004 11 of 12 Philips Semiconductors BT139 series E Triacs; sensitive gate 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 September 2004 Document number: 9397 750 13437 Published in The Netherlands