PD - 93754E IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703 TECHNOLOGY 4# Product Summary c Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 600K Rads (Si) IRHNJ58130 RDS(on) 0.06Ω 0.06Ω 0.06Ω ID 22A* 22A* 22A* QPL Part Number JANSR2N7481U3 JANSF2N7481U3 JANSG2N7481U3 1000K Rads (Si) 0.075Ω 22A* JANSH2N7481U3 SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 22* 16 88 75 0.6 ±20 70 22 7.5 1.4 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 ( for 5s ) 1.0 ( Typical ) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 10/24/03 IRHNJ57130, JANSR2N7481U3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 100 — — V — 0.11 — V/°C — — 0.06 Ω 2.0 13 — — — — — — 4.0 — 10 25 V S( ) ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 50 7.4 20 25 100 35 30 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1005 365 50 — — — nA nC ns nH pF Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 16A ➃ Ω BVDSS VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 16A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 22A VDS = 50V VDD = 50V, ID = 22A, VGS =12V, RG = 7.5Ω Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time * Current is limited by package — — — — — — — — — — 22* 88 1.2 250 850 Test Conditions A V ns nC Tj = 25°C, IS = 22A, VGS = 0V ➃ Tj = 25°C, IF = 22A, di/dt ≤100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 6.9 1.67 — Units °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ57130, JANSR2N7481U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-.5) Diode Forward Voltage ➃ Test Conditions 100 2.0 — — — — — 4.0 100 -100 10 0.064 100 1.5 — — — — — 4.0 100 -100 25 0.08 nA — 0.06 — 0.075 Ω VGS = 12V, ID =16A — 1.2 — 1.2 V VGS = 0V, IS = 22A V µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID =16A 1. Part numbers IRHNJ57130 ( JANSR2N7481U3 ), IRHNJ53130 ( JANSF2N7481U3 ) and IRHNJ54130 ( JANSG2N7481U3 ) 2. Part number IRHNJ58130 ( JANSH2N7481U3 ) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.4 82.3 VDS (V) Range (µm) @V GS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 — Energy (MeV) 309 341 350 120 VDS 100 80 Br 60 I 40 Au 20 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ57130, JANSR2N7481U3 Pre-Irradiation 100 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 5.0V 20µs PULSE WIDTH T = 25 C 1 5.0V 10 10 100 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 15 V DS = 50V 20µs PULSE WIDTH 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.5 8.0 10 100 Fig 2. Typical Output Characteristics 100 7.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 ° J 1 0.1 VDS , Drain-to-Source Voltage (V) 10 5.0 20µs PULSE WIDTH T = 150 C ° J 1 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 22A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = Ciss = Crss = Coss = 1600 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 1200 C oss 800 400 Crss 20 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) IRHNJ57130, JANSR2N7481U3 0 ID = 22A VDS = 80V VDS = 50V VDS = 20V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 10 VDS , Drain-to-Source Voltage (V) 20 30 40 50 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 TJ = 150 ° C 10 TJ = 25 ° C 1 V GS = 0 V 0.1 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com OPERATION IN THIS AREA LIMITED BY R DS(on) 1.2 10 100µs 1ms 1 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10ms 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNJ57130, JANSR2N7481U3 Pre-Irradiation 30 RD VDS LIMITED BY PACKAGE VGS 25 D.U.T. + -VDD 20 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) I D , Drain Current (A) RG 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNJ57130, JANSR2N7481U3 1 5V L VDS D .U .T. RG IA S 2V0GS V D R IV E R + - VD D 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 120 TOP BOTTOM 90 60 30 0 25 V (B R )D SS ID 9.8A 14A 22A 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNJ57130, JANSR2N7481U3 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 0.3 mH Peak IL = 22A, VGS = 12V ➂ I SD ≤ 22A, di/dt ≤ 155A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/03 8 www.irf.com