NJRC NJG1103F1-L1 Low noise amplifier gaas mmic Datasheet

NJG1102F1
LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION
NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.
nFEATURES
lLow voltage operation
lLow current consumption
lHigh small signal gain
lLow noise figure
lHigh Input IP3
lHigh output IP3
lPackage
nPACKAGE OUTLINE
NJG1102F1
+2.7V typ.
3mA typ.
17dB typ. @f=820MHz
1.4dB typ. @f=820MHz
-3dBm typ. @f=820.0+820.1MHz
14dBm typ. @f=820.0+820.1MHz
MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
nPIN CONFIGURATION
F1 TYPE
(Top View)
1
6
Pin connection
2
5
3
4
Note:
1.LNAOUT
2.NC
3.GND
4.GND
5.GND
6.LNAIN
is package orientation mark.
-1-
NJG1102F1
nABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
(Ta=25°C, Zs=Zl=50Ω)
RATINGS
UNITS
5.0
V
+10
dBm
150
mW
-40~+85
°C
SYMBOL
CONDITIONS
VDD
Pin
VDD=2.7V
PD
Topr
Tstg
-55~+125
°C
nELECTRICAL CHARACTERISTICS
PARAMETER
Operating Frequency
Drain Voltage
Operating Current
Small Signal Gain
Gain Flatness
Noise Figure
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
RFIN Port VSWR
RFOUT Port VSWR
-2-
(VDD=2.7V,f=820MHz,Ta=+25°C, Zs=Zl=50Ω)
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
freq
800
820
1000
MHz
VDD
2.5
2.7
4.5
V
IDD
RF OFF
3.0
4.0
mA
Gain
15.0
17.0
19.0
dB
fRF=810~885MHz
Gflat
0.5
1.0
dB
NF
1.4
1.6
dB
P-1dB
IIP3
VSWRi
VSWRo
f=820.0~820.1MHz
-3.0
+1.0
-
dBm
-7.0
-3.0
-
dBm
-
2.0
2.0
3.0
3.0
NJG1102F1
nTYPICAL CHARACTERISTICS
NF,Gain vs. frequency
S21,S11,S22,S12 vs. frequency
(V =2.7V,I =3mA)
DD
25
2.8
18
20
2.6
16
15
Gain
NF(dB)
2.4
14
2.2
12
2
10
Gain(dB)
S21,S11,S22(dB)
20
0
0
6
1.4
4
-15
2
-20
0
-25
1
-10
-5
-10
-40
-50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
frequency(GHz)
Pin vs. Pout
Pin vs. Pout,IM3
(V =2.7V,I =3mA,f=820+820.1MHz)
DD
DD
10
5
DD
0
0
-10
Pout,IM3(dBm)
Pout(dBm)
-30
S12
(V =2.7V,I =3mA,f=820MHz)
DD
-20
S11
S22
frequency(GHz)
10
20
10
1.6
1
0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98
30
S21
5
8
NF
50
40
10
1.8
1.2
(VDD =2.7V,IDD =3mA)
S12(dB)
DD
3
P-1dB=+0.8dBm
-5
-10
-15
Pout
-20
-30
IM3
-40
-20
-50
-25
-60
-30
-40
-70
-40
IIP3=-3.5dBm
-35
-30
-25
-20
-15
-10
-5
0
Pin(dBm)
-35
-30
-25
-20
-15
Gain vs. V
NF,I
DD
( f=820MHz )
-5
0
DD
vs. V
DD
( f=820MHz )
17.5
1.7
3
I
17
DD
1.6
2.9
1.5
2.8
NF
1.4
2.7
1.3
2.6
15.5
15
14.5
2.5
3
3.5
VDD (V)
4
4.5
5
1.2
2.5
2.5
3
3.5
4
4.5
5
V (V)
DD
-3-
DD
16
I (mA)
16.5
NF(dB)
Gain(dB)
-10
Pin(dBm)
NJG1102F1
nTYPICAL CHARACTERISTICS
-4-
NJG1102F1
nTYPICAL CHARACTERISTICS
S21 vs. frequency(~20GHz)
S12 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
DD
(V =2.7V,I =3mA)
DD
20
40
15
30
10
20
5
0
-5
DD
10
0
-10
-10
-20
-15
-30
-20
-40
-25
-50
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
frequency(GHz)
frequency(GHz)
S11 vs. frequency(~20GHz)
S22 vs. frequency(~20GHz)
(VDD =2.7V,IDD =3mA)
25
20
20
15
15
10
10
5
0
-5
5
0
-5
-10
-10
-15
-15
-20
-20
-25
20
(VDD =2.7V,IDD =3mA)
25
S22(dB)
S11(dB)
DD
50
S12(dB)
S21(dB)
25
-25
0
2
4
6
8
10
12
14
frequency(GHz)
16
18
20
0
2
4
6
8
10
12
14
16
18
20
frequency(GHz)
-5-
NJG1102F1
nTYPICAL CHARACTERISTICS
Scattering Parameter Table
VDD=2.7V, IDD=3mA, ZO=50Ω
S11
S21
Freq
mag
ang
mag
ang
(GHz)
(units)
(deg)
(units)
(deg)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
1.000
1.000
1.000
0.994
0.976
0.965
0.925
0.912
0.868
0.849
0.813
0.790
0.761
0.739
0.713
0.697
0.669
0.647
0.616
0.592
0.567
0.542
0.523
0.498
0.486
0.466
0.455
0.441
0.429
0.420
-4.866
-10.234
-14.972
-20.871
-24.915
-30.526
-35.290
-40.103
-45.428
-49.349
-54.587
-58.371
-63.046
-66.963
-71.006
-75.141
-78.451
-82.248
-84.912
-87.965
-90.200
-92.166
-93.962
-95.631
-96.784
-97.556
-97.902
-98.495
-98.609
-98.095
1.342
1.524
1.557
1.572
1.564
1.548
1.504
1.499
1.467
1.443
1.408
1.379
1.337
1.322
1.308
1.258
1.233
1.198
1.163
1.132
1.099
1.068
1.041
1.011
0.981
0.958
0.931
0.901
0.877
0.849
-159.147
-179.085
169.103
158.960
150.714
142.447
134.839
127.579
120.278
113.971
107.103
101.107
95.249
89.341
83.704
78.278
72.642
67.296
61.655
56.671
51.306
46.616
41.818
37.218
32.941
28.504
24.687
20.371
16.741
12.899
S12
mag
ang
(units)
(deg)
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.008
0.008
0.008
0.009
0.009
0.010
0.011
0.013
0.015
0.017
0.019
0.022
0.024
0.027
0.030
0.033
0.036
0.040
0.043
0.046
0.050
0.053
0.057
14.420
22.117
29.722
31.125
35.066
41.693
44.722
48.888
53.252
58.494
65.663
71.121
79.229
84.816
90.070
93.627
96.762
98.510
99.423
99.437
99.393
98.567
97.417
96.016
94.289
92.819
90.816
89.017
86.927
84.724
S22
mag
ang
(units)
(deg)
0.945
0.935
0.927
0.926
0.920
0.915
0.912
0.905
0.906
0.898
0.902
0.896
0.897
0.898
0.895
0.894
0.895
0.889
0.890
0.885
0.883
0.889
0.886
0.889
0.892
0.890
0.892
0.895
0.894
0.899
Note: VDD(=2.7V) is supplied through “BIAS CONNECT(PORT2)” of Network Analyzer.
S11
4
3
5
2
6
1
S22
Ref
Ref.
.
Scattering Parameter Measurement Configuration
-6-
-3.745
-5.657
-7.752
-9.779
-11.953
-14.091
-16.312
-18.499
-20.641
-22.933
-25.089
-27.460
-29.474
-31.516
-33.708
-35.562
-37.942
-39.726
-42.289
-44.339
-46.238
-48.338
-50.652
-52.442
-54.490
-55.710
-57.821
-59.505
-60.952
-62.567
NJG1102F1
nRECOMMEND CIRCUIT
(f=810~885MHz)
4
3
5
2
15nH
ZO=50Ω
IN
3pF Zo=50Ω
OUT
27nH
6
1
12nH
12nH
1000pF
VDD
nRECOMMENDED PCB DESIGN
(Top View)
IN
L3
L2
L1 2
C1
L4
OUT
C2 V
DD
PCB : FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω)
PCB SIZE : 14.0x14.0mm
PARTS LIST (f=810~885MHz)
PART ID
PARAMETER
COMMENT
L1
12nH
TAIYO-YUDEN HK1608 Series
L2
15nH
TAIYO-YUDEN HK1608 Series
L3
27nH
TAIYO-YUDEN HK1608 Series
L4
12nH
TAIYO-YUDEN HK1608 Series
C1
3pF
MURATA GRM39 Series
C2
1000pF
MURATA GRM39 Series
-7-
NJG1102F1
nPACKAGE OUTLINE (MTP6-1)
Lead material
Lead surface finish
Molding material
UNIT
Weight
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
-8-
: Copper
: Solder plating
: Epoxy resin
: mm
:15mg
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Similar pages