PD - 97570B IRLHS6276PbF HEXFET® Power MOSFET 20 V VGS ±12 V RDS(on) max 45 mΩ ' D1 D1 * D2 6 A ' d ' 3.4 G1 S1 2mm x 2mm Dual PQFN 7 )( (@Tc(Bottom) = 25°C) mΩ ' ID 62 * (@VGS = 2.5V) S2 G2 D2 7 )( RDS(on) max 6 (@VGS = 4.5V) : ,( 9 3 2 7 VDS Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 45mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRLHS6276TRPBF IRLHS6276TR2PBF PQFN Dual 2mm x 2mm PQFN Dual 2mm x 2mm results in ⇒ Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 20 VGS Gate-to-Source Voltage ±12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 3.6 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C IDM Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range d d 9.6d 6.1d 3.4d V A 40 1.5 f Units 6.6 0.012 -55 to + 150 W W/°C °C Notes through are on page 2 www.irf.com 1 07/19/11 IRLHS6276PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 9.3 33 ––– 45 Gate Threshold Voltage ––– 0.5 46 0.8 62 1.1 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– ––– -3.8 ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Qgs Forward Transconductance 8.8 ––– ––– 3.1 ––– ––– S VDS = 10V, ID = 3.4A VDS = 10V Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time ––– ––– 0.22 1.3 ––– ––– nC Qgd VGS = 4.5V ID = 3.4A (See Fig.17 & 18) ––– ––– ––– 4.0 4.4 9.3 ––– ––– ––– Ω Turn-Off Delay Time Fall Time ––– ––– 10 4.9 ––– ––– Input Capacitance Output Capacitance ––– ––– 310 79 ––– ––– Reverse Transfer Capacitance ––– 49 ––– Min. Typ. BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS RG td(on) tr td(off) tf Ciss Coss Crss h Total Gate Charge Gate-to-Source Charge h h Max. Units V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 3.4A mΩ VGS = 2.5V, ID = 3.4A V VDS = VGS, ID = 10μA mV/°C VDS = 16V, VGS = 0V μA VDS = 16V, VGS = 0V, TJ = 125°C ed ed nA ns pF VGS = 12V VGS = -12V d d VDD = 10V, VGS = 4.5V ID = 3.4A d RG=1.8Ω See Fig.15 VGS = 0V VDS = 10V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ––– Max. Units d 9.6 ––– ––– 40 ––– ––– ––– 5.2 1.2 7.8 Conditions D MOSFET symbol A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 3.4A , VGS = 0V TJ = 25°C, IF = 3.4A , VDD = 10V di/dt = 126A/μs ––– 5.0 7.5 nC Time is dominated by parasitic Inductance G e d d S e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) g g Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter f f Typ. ––– ––– ––– ––– Max. 19 175 86 69 Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at T J of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRLHS6276PbF 100 100 10 BOTTOM 1 1.4V 0.1 ≤60μs PULSE WIDTH TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V 10 BOTTOM 1 1.4V ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 1.6 10 T J = 150°C 1 T J = 25°C VDS = 10V ≤60μs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID = 3.4A VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 0.1 0.0 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 3.4A C oss = C ds + C gd 1000 Ciss Coss 100 Crss 10 12.0 VDS= 16V VDS= 10V 10.0 VDS= 4.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V 0 2 4 6 8 10 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRLHS6276PbF 100 10 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100μsec Limited by Wire Bond 1 10msec Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 DC 0.1 0.0 0.4 0.8 1.2 1.6 2.0 0 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.2 9 VGS(th) , Gate threshold Voltage (V) 10 Limited By Package 8 ID, Drain Current (A) 1msec 7 6 5 4 3 2 1 1.0 0.8 ID = 25μA 0.6 0.4 0.2 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 100 10 D = 0.50 0.20 0.10 1 0.05 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 100 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLHS6276PbF ID = 3.4A 80 60 T J = 125°C 40 TJ = 25°C 20 0 0 2 4 6 8 10 200 VGS = 2.5V 150 100 VGS = 4.5V 50 0 12 0 5 10 15 20 25 30 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current 60 1000 ID TOP 0.89A 1.8A BOTTOM 3.4A 50 800 Single Pulse Power (W) EAS , Single Pulse Avalanche Energy (mJ) 250 40 30 20 600 400 200 10 0 25 50 75 100 125 0 1E-5 150 1E-4 Starting T J , Junction Temperature (°C) Driver Gate Drive - - P.W. P.W. Period D.U.T. ISD Waveform Reverse Recovery Current + • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D= Period * RG 1E+0 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - 1E-1 Fig 15. Typical Power vs. Time + + 1E-2 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T 1E-3 V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices www.irf.com Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 5 IRLHS6276PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS VGS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 19b. Switching Time Waveforms www.irf.com IRLHS6276PbF PQFN Dual 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN Dual 2x2 Outline Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRLHS6276PbF PQFN Dual 2x2 Outline Tape and Reel 8 www.irf.com IRLHS6276PbF Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN Dual 2mm x 2mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/11 www.irf.com 9