AP9928GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance D2 D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package BVDSS 20V RDS(ON) 23mΩ ID 7.3A G2 S2 SO-8 S1 G1 Description D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ±12 V Continuous Drain Current 3 7.3 A Continuous Drain Current 3 5.8 A 30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 200121051 AP9928GEM o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=7A - - 23 mΩ VGS=2.5V, ID=5A - - 32 mΩ 0.5 - - V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=VGS, ID=250uA VDS=5V, ID=7A - 18 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±12V - - ±10 uA ID=7A - 17 27 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9 - nC 2 td(on) Turn-on Delay Time VDS=10V - 12 - ns tr Rise Time ID=1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 32 - ns tf Fall Time RD=10Ω - 17 - ns Ciss Input Capacitance VGS=0V - 500 800 pF Coss Output Capacitance VDS=20V - 260 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF Rg Gate Resistance f=1.0MHz - 2.8 4.2 Ω Min. Typ. Max. Units - - Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V 2 1.2 V trr Reverse Recovery Time IS=7A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 28 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP9928GEM 30 30 10 V G =2.0V ID , Drain Current (A) o T A =25 C 0 20 V G = 2.0 V 10 0 0 1 2 3 4 0 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 I D =7A V G = 4.5V ID=5A o T A =25 C Normalized R DS(ON) 23 RDS(ON) (mΩ ) 1 V DS , Drain-to-Source Voltage (V) 27 19 1.4 1.0 0.6 15 2 4 6 8 -50 10 0 50 100 150 o T j , Junction Temperature ( C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature 1.6 8 T j =150 o C Normalized VGS(th) (V) 6 IS(A) 4.5V 3.5 V 3.0 V 2.5V o T A = 150 C ID , Drain Current (A) 20 4.5V 3.5 V 3.0 V 2.5V T j =25 o C 4 1.2 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9928GEM f=1.0MHz 10000 ID=7A 12 V DS = 10 V V DS = 12 V V DS =1 6 V 9 C (pF) VGS , Gate to Source Voltage (V) 15 6 1000 C oss C iss 3 C rss 100 0 0 10 20 30 1 40 4 Fig 7. Gate Charge Characteristics 10 13 16 19 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 1ms 10 10ms ID (A) 7 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 100ms 0.1 1s 10s DC T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.01 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C QG T j =150 o C 20 4.5V QGS QGD 10 Charge 0 0 1 2 3 4 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q